A Method to Construct Low Delay Single Error Correction Codes for Protecting Data Bits Only

Abstract—Error correction codes (ECCs) have been used for decades to protect memories from soft errors. Single error correction (SEC) codes that can correct 1-bit error per word are a common option for memory protection. In some cases, SEC codes are extended to also provide double error detection and are known as SEC-DED codes. As technology scales, soft errors on registers also became a concern and, therefore, SEC codes are used to protect registers. The use of an ECC impacts the circuit design in terms of both delay and area. Traditional SEC or SEC-DED codes developed for memories have focused on minimizing the number of redundant bits added by the code. This is important in a memory as those bits are added to each word in the memory. However, for registers used in circuits, minimizing the delay or area introduced by the ECC can be more important. In this paper, a method to construct low delay SEC or SEC-DED codes that correct errors only on the data bits is proposed. The method is evaluated for several data block sizes, showing that the new codes offer significant delay reductions when compared with traditional SEC or SEC-DED codes. The results for the area of the encoder and decoder also show substantial savings compared to existing codes. Index Terms—Double error detection, error correction codes (ECCs), single error correction (SEC), soft errors. I

A method to construct low delay single error correction codes for protecting data bits only

Error correction codes (ECCs) have been used for decades to protect memories from soft errors. Single error correction (SEC) codes that can correct 1-bit error per word are a common option for memory protection. In some cases, SEC codes are extended to also provide double error detection and are known as SEC-DED codes. As technology scales, soft errors on registers also became a concern and, therefore, SEC codes are used to protect registers. The use of an ECC impacts the circuit design in terms of both delay and area. Traditional SEC or SEC-DED codes developed for memories have focused on minimizing the number of redundant bits added by the code. This is important in a memory as those bits are added to each word in the memory. However, for registers used in circuits, minimizing the delay or area introduced by the ECC can be more important. In this paper, a method to construct low delay SEC or SEC-DED codes that correct errors only on the data bits is proposed. The method is evaluated for several data block sizes, showing that the new codes offer significant delay reductions when compared with traditional SEC or SEC-DED codes. The results for the area of the encoder and decoder also show substantial savings compared to existing codes

A Real-Time Error Detection (RTD) architecture and its use for reliability and post-silicon validation for F/F based memory arrays

This work proposes in-situ Real-Time Error Detection (RTD): embedding hardware in a memory array for detecting a fault in the array when it occurs, rather than when it is read. RTD breaks the serialization between data access and error-detection and, thus, it can speed-up the access-time of arrays that use in-line error-correction. The approach can also reduce the time needed to root-cause array related bugs during post-silicon validation and product testing. The paper introduces a two-dimensional error-correction scheme based on RTD and, also, presents a proactive error-correction method that combines RTD with demand-scrubbing. The work describes how to build RTD into a memory array with flip-flops to track in real-time the column-parity. A comparison of the proposed two-dimensional ECC scheme, as compared to single-error-correction-double-error-detection, shows that the RTD design has comparable error-detection-and-correction strength and, depending on the array dimensions and configuration, RTD reduces access time by 4% to 26% at an area and power overhead (negative is a reduction) between -7% to 33% and -42% to 86% respectively.Peer ReviewedPostprint (author's final draft

Design, Implementation and Evaluation of a Low Redundant Error Correction Code

[EN] The continuous raise in the integration scale of CMOS technology has provoked an augment in the fault rate. Particularly, computer memory is affected by Single Cell Upsets (SCU) and Multiple Cell Upsets (MCU). A common method to tolerate errors in this element is the use of Error Correction Codes (ECC). The addition of an ECC introduces a series of overheads: silicon area, power consumption and delay overheads of encoding and decoding circuits, as well as several extra bits added to allow detecting and/or correcting errors. ECC can be designed with different parameters in mind: low redundancy, low delay, error coverage, etc. The idea of this paper is to study the effects produced when adding an ECC to a microprocessor with respect to overheads. Usually, ECC with different characteristics are continuously proposed. However, a great quantity of these proposals only present the ECC, not showing its behavior when using them in a microprocessor. In this work, we present the design of an ECC whose main characteristic is a low number of code bits (low redundancy). Then, we study the overhead this ECC introduces. Firstly, we show a study of silicon area, delay and power consumption of encoder and decoder circuits, and secondly, how the addition of this ECC affects to a RISC microprocessor.© 2021 IEEE. Personal use of this material is permitted. Permissíon from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertisíng or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Gracia-Morán, J.; Saiz-Adalid, L.; Baraza-Calvo, J.; Gil Tomás, DA.; Gil, P. (2021). Design, Implementation and Evaluation of a Low Redundant Error Correction Code. IEEE Latin America Transactions. 19(11):1903-1911. https://doi.org/10.1109/TLA.2021.947562419031911191