Memristors for the Curious Outsiders

We present both an overview and a perspective of recent experimental advances and proposed new approaches to performing computation using memristors. A memristor is a 2-terminal passive component with a dynamic resistance depending on an internal parameter. We provide an brief historical introduction, as well as an overview over the physical mechanism that lead to memristive behavior. This review is meant to guide nonpractitioners in the field of memristive circuits and their connection to machine learning and neural computation.Comment: Perpective paper for MDPI Technologies; 43 page

Asymptotic behavior of memristive circuits

The interest in memristors has risen due to their possible application both as memory units and as computational devices in combination with CMOS. This is in part due to their nonlinear dynamics, and a strong dependence on the circuit topology. We provide evidence that also purely memristive circuits can be employed for computational purposes. In the present paper we show that a polynomial Lyapunov function in the memory parameters exists for the case of DC controlled memristors. Such Lyapunov function can be asymptotically approximated with binary variables, and mapped to quadratic combinatorial optimization problems. This also shows a direct parallel between memristive circuits and the Hopfield-Little model. In the case of Erdos-Renyi random circuits, we show numerically that the distribution of the matrix elements of the projectors can be roughly approximated with a Gaussian distribution, and that it scales with the inverse square root of the number of elements. This provides an approximated but direct connection with the physics of disordered system and, in particular, of mean field spin glasses. Using this and the fact that the interaction is controlled by a projector operator on the loop space of the circuit. We estimate the number of stationary points of the approximate Lyapunov function and provide a scaling formula as an upper bound in terms of the circuit topology only.Comment: 20 pages, 8 figures; proofs corrected, figures changed; results substantially unchanged; to appear in Entrop

Towards Ultra-High Performance and Energy Efficiency of Deep Learning Systems: An Algorithm-Hardware Co-Optimization Framework

Hardware accelerations of deep learning systems have been extensively investigated in industry and academia. The aim of this paper is to achieve ultra-high energy efficiency and performance for hardware implementations of deep neural networks (DNNs). An algorithm-hardware co-optimization framework is developed, which is applicable to different DNN types, sizes, and application scenarios. The algorithm part adopts the general block-circulant matrices to achieve a fine-grained tradeoff between accuracy and compression ratio. It applies to both fully-connected and convolutional layers and contains a mathematically rigorous proof of the effectiveness of the method. The proposed algorithm reduces computational complexity per layer from O($n^2$) to O($n\log n$) and storage complexity from O($n^2$) to O($n$), both for training and inference. The hardware part consists of highly efficient Field Programmable Gate Array (FPGA)-based implementations using effective reconfiguration, batch processing, deep pipelining, resource re-using, and hierarchical control. Experimental results demonstrate that the proposed framework achieves at least 152X speedup and 71X energy efficiency gain compared with IBM TrueNorth processor under the same test accuracy. It achieves at least 31X energy efficiency gain compared with the reference FPGA-based work.Comment: 6 figures, AAAI Conference on Artificial Intelligence, 201

First order devices, hybrid memristors, and the frontiers of nonlinear circuit theory

Several devices exhibiting memory effects have shown up in nonlinear circuit theory in recent years. Among others, these circuit elements include Chua's memristors, as well as memcapacitors and meminductors. These and other related devices seem to be beyond the, say, classical scope of circuit theory, which is formulated in terms of resistors, capacitors, inductors, and voltage and current sources. We explore in this paper the potential extent of nonlinear circuit theory by classifying such mem-devices in terms of the variables involved in their constitutive relations and the notions of the differential- and the state-order of a device. Within this framework, the frontier of first order circuit theory is defined by so-called hybrid memristors, which are proposed here to accommodate a characteristic relating all four fundamental circuit variables. Devices with differential order two and mem-systems are discussed in less detail. We allow for fully nonlinear characteristics in all circuit elements, arriving at a rather exhaustive taxonomy of C^1-devices. Additionally, we extend the notion of a topologically degenerate configuration to circuits with memcapacitors, meminductors and all types of memristors, and characterize the differential-algebraic index of nodal models of such circuits.Comment: Published in 2013. Journal reference included as a footnote in the first pag