A Comparison of Uncertainty Evaluation Methods for On-Wafer S-Parameter Measurements

An experimental analysis of on-wafer S-parameter uncertainties is presented. Recently, two different approaches, based either on differential numerical programming or on a fully analytical solution have been introduced. In order estabilish their suitability, a careful comparison is here given for on-wafer meaurements. Through this comparison, possible limitations and causes of errors are also highlighted. Finally, the uncertainty evaluation of the 16-term error model is here presented for the first time

Towards wafer scale inductive determination of magnetostatic and dynamic parameters of magnetic thin films and multilayers

We investigate an inductive probe head suitable for non-invasive characterization of the magnetostatic and dynamic parameters of magnetic thin films and multilayers on the wafer scale. The probe is based on a planar waveguide with rearward high frequency connectors that can be brought in close contact to the wafer surface. Inductive characterization of the magnetic material is carried out by vector network analyzer ferromagnetic resonance. Analysis of the field dispersion of the resonance allows the determination of key material parameters such as the saturation magnetization MS or the effective damping parameter Meff. Three waveguide designs are tested. The broadband frequency response is characterized and the suitability for inductive determination of MS and Meff is compared. Integration of such probes in a wafer prober could in the future allow wafer scale in-line testing of magnetostatic and dynamic key material parameters of magnetic thin films and multilayers

A new SOLT calibration method for leaky on-wafer measurements using a 10-term error model

We present a new Short-Open-Load-Thru (SOLT) calibration method for on-wafer S-parameter measurements. The new calibration method is based on a 10-term error model which is a simplified version of the 16-term error model. Compared with the latter, the former ignores all signal leakages except the ones between the probes. Experimental results show that this is valid for modern vector network analyzers (VNA). The advantage of using this 10-term error model is that the exact values of all error terms can be obtained by using the same calibration standards as the conventional SOLT method. This avoids not only the singularity problem with approximate methods, such as least squares, but also the usage of additional calibration standards. In this paper, we first demonstrate how the 10-term error model is developed and then the experimental verification of the theory is given. Finally, a practical application of the error model using a 10 dB attenuator from 140 GHz to 220 GHz is presented. Compared with the conventional SOLT calibration method without crosstalk corrections, the new method shows approximately 1 dB improvement in the transmission coefficients of the attenuator at 220 GHz

Inhomogeneous mechanical losses in micro-oscillators with high reflectivity coating

We characterize the mechanical quality factor of micro-oscillators covered by a highly reflective coating. We test an approach to the reduction of mechanical losses, that consists in limiting the size of the coated area to reduce the strain and the consequent energy loss in this highly dissipative component. Moreover, a mechanical isolation stage is incorporated in the device. The results are discussed on the basis of an analysis of homogeneous and non-homogeneous losses in the device and validated by a set of Finite-Element models. The contributions of thermoelastic dissipation and coating losses are separated and the measured quality factors are found in agreement with the calculated values, while the absence of unmodeled losses confirms that the isolation element integrated in the device efficiently uncouples the dynamics of the mirror from the support system. Also the resonant frequencies evaluated by Finite-Element models are in good agreement with the experimental data, and allow the estimation of the Young modulus of the coating. The models that we have developed and validated are important for the design of oscillating micro-mirrors with high quality factor and, consequently, low thermal noise. Such devices are useful in general for high sensitivity sensors, and in particular for experiments of quantum opto-mechanics

An active interferometric method for extreme impedance on-wafer device measurements

Nano-scale devices and high-power transistors present extreme impedances, which are far removed from the 50-Ω reference impedance of conventional test equipment, resulting in a reduction in the measurement sensitivity as compared with impedances close to the reference impedance. This letter describes a novel method based on active interferometry to increase the measurement sensitivity of a vector network analyzer for measuring such extreme impedances, using only a single coupler. The theory of the method is explained with supporting simulation. An interferometry-based method is demonstrated for the first time with on-wafer measurements, resulting in an improved measurement sensitivity for extreme impedance device characterization of up to 9%

Precision determination of absolute neutron flux

A technique for establishing the total neutron rate of a highly-collimated monochromatic cold neutron beam was demonstrated using a method of an alpha-gamma counter. The method involves only the counting of measured rates and is independent of neutron cross sections, decay chain branching ratios, and neutron beam energy. For the measurement, a target of 10B-enriched boron carbide totally absorbed the neutrons in a monochromatic beam, and the rate of absorbed neutrons was determined by counting 478keV gamma rays from neutron capture on 10B with calibrated high-purity germanium detectors. A second measurement based on Bragg diffraction from a perfect silicon crystal was performed to determine the mean de Broglie wavelength of the beam to a precision of 0.024 %. With these measurements, the detection efficiency of a neutron monitor based on neutron absorption on 6Li was determined to an overall uncertainty of 0.058 %. We discuss the principle of the alpha-gamma method and present details of how the measurement was performed including the systematic effects. We also describe how this method may be used for applications in neutron dosimetry and metrology, fundamental neutron physics, and neutron cross section measurements.Comment: 44 page

Accuracy of Microwave Transistor fT and fMAX Extractions

We present a complete methodology to evaluate the accuracy of microwave transistor figures-of-merit fT (current gain cut-off frequency) and fMAX (maximum oscillation frequency). These figures-of-merit are usually extracted from calibrated S-parameter measurements affected by residual calibration and measurement uncertainties. Thus, the uncertainties associated to fT and fMAX can be evaluated only after an accurate computation of the S-parameters uncertainties, including the contribution from de-embedding. This was done with the aid of two recently released software tools. We also present an analysis on how different interpolation/extrapolation methodologies affect uncertainty. Finally, an overview of the possible causes of errors and suggestions on how to avoid them are given. With the continued rise of reported fT /fMAX values, this study has become necessary in order to add confidence intervals to these figures-of-meri

Characterization of multilayer stack parameters from X-ray reflectivity data using the PPM program: measurements and comparison with TEM results

Future hard (10 -100 keV) X-ray telescopes (SIMBOL-X, Con-X, HEXIT-SAT, XEUS) will implement focusing optics with multilayer coatings: in view of the production of these optics we are exploring several deposition techniques for the reflective coatings. In order to evaluate the achievable optical performance X-Ray Reflectivity (XRR) measurements are performed, which are powerful tools for the in-depth characterization of multilayer properties (roughness, thickness and density distribution). An exact extraction of the stack parameters is however difficult because the XRR scans depend on them in a complex way. The PPM code, developed at ERSF in the past years, is able to derive the layer-by-layer properties of multilayer structures from semi-automatic XRR scan fittings by means of a global minimization procedure in the parameters space. In this work we will present the PPM modeling of some multilayer stacks (Pt/C and Ni/C) deposited by simple e-beam evaporation. Moreover, in order to verify the predictions of PPM, the obtained results are compared with TEM profiles taken on the same set of samples. As we will show, PPM results are in good agreement with the TEM findings. In addition, we show that the accurate fitting returns a physically correct evaluation of the variation of layers thickness through the stack, whereas the thickness trend derived from TEM profiles can be altered by the superposition of roughness profiles in the sample image

Performance of a novel wafer scale CMOS active pixel sensor for bio-medical imaging

Recently CMOS Active Pixels Sensors (APSs) have become a valuable alternative to amorphous Silicon and Selenium Flat Panel Imagers (FPIs) in bio-medical imaging applications. CMOS APSs can now be scaled up to the standard 20 cm diameter wafer size by means of a reticle stitching block process. However despite wafer scale CMOS APS being monolithic, sources of non-uniformity of response and regional variations can persist representing a significant challenge for wafer scale sensor response. Non-uniformity of stitched sensors can arise from a number of factors related to the manufacturing process, including variation of amplification, variation between readout components, wafer defects and process variations across the wafer due to manufacturing processes. This paper reports on an investigation into the spatial non-uniformity and regional variations of a wafer scale stitched CMOS APS. For the first time a per-pixel analysis of the electro-optical performance of a wafer CMOS APS is presented, to address inhomogeneity issues arising from the stitching techniques used to manufacture wafer scale sensors. A complete model of the signal generation in the pixel array has been provided and proved capable of accounting for noise and gain variations across the pixel array. This novel analysis leads to readout noise and conversion gain being evaluated at pixel level, stitching block level and in regions of interest, resulting in a coefficient of variation ≤ 1.9%. The uniformity of the image quality performance has been further investigated in a typical X-ray application, i.e. mammography, showing a uniformity in terms of CNR among the highest when compared with mammography detectors commonly used in clinical practise. Finally, in order to compare the detection capability of this novel APS with the currently used technology (i.e. FPIs), theoretical evaluation of the Detection Quantum Efficiency (DQE) at zero-frequency has been performed, resulting in a higher DQE for this detector compared to FPIs. Optical characterization, X-ray contrast measurements and theoretical DQE evaluation suggest that a trade off can be found between the need of a large imaging area and the requirement of a uniform imaging performance, making the DynAMITe large area CMOS APS suitable for a range of bio-medical applications

Investigation of single crystal ferrite thin films

Materials suitable for use in magnetic bubble domain memories were developed for aerospace applications. Practical techniques for the preparation of such materials in forms required for fabrication of computer memory devices were considered. The materials studied were epitaxial films of various compositions of the gallium-substituted yttrium gadolinium iron garnet system. The major emphasis was to determine their bubble properties and the conditions necessary for growing uncracked, high quality films