Nanopower CMOS transponders for UHF and microwave RFID systems

At first, we present an analysis and a discussion of the design options and tradeoffs for a passive microwave transponder. We derive a set of criteria for the optimization of the voltage multiplier, the power matching network and the backscatter modulator in order to optimize the operating range. In order to match the strictly power requirements, the communication protocol between transponder and reader has been chosen in a convenient way, in order to make the architecture of the passive transponder very simple and then ultra-low-power. From the circuital point of view, the digital section has been implemented in subthreshold CMOS logic with very low supply voltage and clock frequency. We present different solutions to supply power to the transponder, in order to keep the power consumption in the deep sub-µW regime and to drastically reduce the huge sensitivity of the subthreshold logic to temperature and process variations. Moreover, a low-voltage and low-power EEPROM in a standard CMOS process has been implemented. Finally, we have presented the implementation of the entire passive transponder, operating in the UHF or microwave frequency range

On evaluating temperature as observable for CMOS technology variability

The temperature at surface of a silicon die depends on the activity of the circuits placed on it. In this paper, it is analyzed how Process, Voltage and Temperature (PVT) variations affect simultaneously some figures of merit (FoM) of some digital and analog circuits and the power dissipated by such circuits. It is shown that in some cases, a strong correlation exists between the variation of the circuit FoM and the variation of the dissipated power. Since local temperature increase at the silicon surface close to the circuit linearly depends on dissipated power, the results show that temperature can be considered as an observable magnitude for CMOS technology variability monitoring.Postprint (published version

Low Power Adaptive Circuits: An Adaptive Log Domain Filter and A Low Power Temperature Insensitive Oscillator Applied in Smart Dust Radio

This dissertation focuses on exploring two low power adaptive circuits. One is an adaptive filter at audio frequency for system identification. The other is a temperature insensitive oscillator for low power radio frequency communication. The adaptive filter is presented with integrated learning rules for model reference estimation. The system is a first order low pass filter with two parameters: gain and cut-off frequency. It is implemented using multiple input floating gate transistors to realize online learning of system parameters. Adaptive dynamical system theory is used to derive robust control laws in a system identification task. Simulation results show that convergence is slower using simplified control laws but still occurs within milliseconds. Experimental results confirm that the estimated gain and cut-off frequency track the corresponding parameters of the reference filter. During operation, deterministic errors are introduced by mismatch within the analog circuit implementation. An analysis is presented which attributes the errors to current mirror mismatch. The harmonic distortion of the filter operating in different inversion is analyzed using EKV model numerically. The temperature insensitive oscillator is designed for a low power wireless network. The system is based on a current starved ring oscillator implemented using CMOS transistors instead of LC tank for less chip area and power consumption. The frequency variance with temperature is compensated by the temperature adaptive circuits. Experimental results show that the frequency stability from 5°C to 65°C has been improved 10 times with automatic compensation and at least 1 order less power is consumed than published competitors. This oscillator is applied in a 2.2GHz OOK transmitter and a 2.2GHz phase locked loop based FM receiver. With the increasing needs of compact antenna, possible high data rate and wide unused frequency range of short distance communication, a higher frequency phase locked loop used for BFSK receiver is explored using an LC oscillator for its capability at 20GHz. The success of frequency demodulation is demonstrated in the simulation results that the PLL can lock in 0.5μs with 35MHz lock-in range and 2MHz detection resolution. The model of a phase locked loop used for BFSK receiver is analyzed using Matlab

Study Of Design For Reliability Of Rf And Analog Circuits

Due to continued device dimensions scaling, CMOS transistors in the nanometer regime have resulted in major reliability and variability challenges. Reliability issues such as channel hot electron injection, gate dielectric breakdown, and negative bias temperature instability (NBTI) need to be accounted for in the design of robust RF circuits. In addition, process variations in the nanoscale CMOS transistors are another major concern in today‟s circuits design. An adaptive gate-source biasing scheme to improve the RF circuit reliability is presented in this work. The adaptive method automatically adjusts the gate-source voltage to compensate the reduction in drain current subjected to various device reliability mechanisms. A class-AB RF power amplifier shows that the use of a source resistance makes the power-added efficiency robust against threshold voltage and mobility variations, while the use of a source inductance is more reliable for the input third-order intercept point. A RF power amplifier with adaptive gate biasing is proposed to improve the circuit device reliability degradation and process variation. The performances of the power amplifier with adaptive gate biasing are compared with those of the power amplifier without adaptive gate biasing technique. The adaptive gate biasing makes the power amplifier more resilient to process variations as well as the device aging such as mobility and threshold voltage degradation. Injection locked voltage-controlled oscillators (VCOs) have been examined. The VCOs are implemented using TSMC 0.18 µm mixed-signal CMOS technology. The injection locked oscillators have improved phase noise performance than free running oscillators. iv A differential Clapp-VCO has been designed and fabricated for the evaluation of hot electron reliability. The differential Clapp-VCO is formed using cross-coupled nMOS transistors, on-chip transformers/inductors, and voltage-controlled capacitors. The experimental data demonstrate that the hot carrier damage increases the oscillation frequency and degrades the phase noise of Clapp-VCO. A p-channel transistor only VCO has been designed for low phase noise. The simulation results show that the phase noise degrades after NBTI stress at elevated temperature. This is due to increased interface states after NBTI stress. The process variability has also been evaluated

Supply Voltage and Temperature Insensitive Current Reference for the 4 MHz Oscillator

[[abstract]]This paper presents a 4 MHz current control ring oscillator with a new temperature and supply voltage immune current reference implemented by 0.35um CMOS technology. Compared to the conventional oscillator with current reference techniques, the proposed approach shows a significant improvement for the sensitivities of temperature and supply voltage. The current reference is designed by combining positive and negative temperature effect circuits, such that it can exempt from the temperature and supply voltage variations. By HSPICE simulation, this new current reference is insensitive to the supply voltage with variations of -0.47%~0.67% over the supply voltage range of 2.97V to 3.63V, and it is also insensitive to the temperature with variation of 366 ppm/C over the temperature range of -40C to 100C. The proposed oscillator frequency is insensitive to the supply voltage with variations of -15%~20% over the supply voltage range of 2.97V to 3.63V, and it is insensitive to temperature with variation of 404 ppm/C over the temperature range of -40C to 100C.[[abstract]]This paper presents a 4 MHz current control ring oscillator with a new temperature and supply voltage immune current reference implemented by 0.35nm CMOS technology. Compared to the conventional oscillator with current reference techniques, the proposed approach shows a significant improvement for the sensitivities of temperature and supply voltage. The current reference is designed by combining positive and negative temperature effect circuits, such that it can exempt from the temperature and supply voltage variations. By HSPICE simulation, this new current reference is insensitive to the supply voltage with variations of -0.47%~0.67% over the supply voltage range of 2.97V to 3.63V, and it is also insensitive to the temperature with variation of 366 ppm/°C over the temperature range of -40°C to 100°C. The proposed oscillator frequency is insensitive to the supply voltage with variations of -15%~20% over the supply voltage range of 2.97V to 3.63V, and it is insensitive to temperature with variation of 404 ppm/°C over the temperature range of-40°C to 100°C.[[conferencetype]]國際[[conferencedate]]20111212~2011121

A Robust Oscillator for Embedded System without External Crystal

[[abstract]]The robust voltage-controlled oscillator is presented by using the constant current reference and the ring oscillator for the embedded system application. The constant current reference generates the constant current for the succeeding ring oscillator to produce a stable 4MHz oscillation frequency. The proposed VCO circuit was fabricated in a 0.35 mm CMOS technology and worked with a supply voltage of 3.3 V. The chip area of the VCO was 150 mm × 130 mm. According to measured results, the oscillation frequency drift of the proposed VCO was 986 ppm/◦C over a temperature range of -25◦C to 100◦C. The phase noise of -62.29 dBc/Hz was obtained at 1 MHz offset from the carrier. Moreover, total current consumption of the entire VCO was 234.72 mA. Therefore, the proposed VCO is suitable for integration into the embedded system.[[notice]]補正完畢[[incitationindex]]SCI[[booktype]]電子

Efficient and Interference-Resilient Wireless Connectivity for IoT Applications

With the coming of age of the Internet of Things (IoT), demand on ultra-low power (ULP) and low-cost radios will continue to boost tremendously. The Bluetooth-Low-energy (BLE) standard provides a low power solution to connect IoT nodes with mobile devices, however, the power of maintaining a connection with a reasonable latency remains the limiting factor in defining the lifetime of event-driven BLE devices. BLE radio power consumption is in the milliwatt range and can be duty cycled for average powers around 30μW, but at the expense of long latency. Furthermore, wireless transceivers traditionally perform local oscillator (LO) calibration using an external crystal oscillator (XTAL) that adds significant size and cost to a system. Removing the XTAL enables a true single-chip radio, but an alternate means for calibrating the LO is required. Innovations in both the system architecture and circuits implementation are essential for the design of truly ubiquitous receivers for IoT applications. This research presents two porotypes as back-channel BLE receivers, which have lower power consumption while still being robust in the presents of interference and able to receive back-channel message from BLE compliant transmitters. In addition, the first crystal-less transmitter with symmetric over-the-air clock recovery compliant with the BLE standard using a GFSK-Modulated BLE Packet is presented.PHDElectrical and Computer EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/162942/1/abdulalg_1.pd

Low power CMOS IC, biosensor and wireless power transfer techniques for wireless sensor network application

The emerging field of wireless sensor network (WSN) is receiving great attention due to the interest in healthcare. Traditional battery-powered devices suffer from large size, weight and secondary replacement surgery after the battery life-time which is often not desired, especially for an implantable application. Thus an energy harvesting method needs to be investigated. In addition to energy harvesting, the sensor network needs to be low power to extend the wireless power transfer distance and meet the regulation on RF power exposed to human tissue (specific absorption ratio). Also, miniature sensor integration is another challenge since most of the commercial sensors have rigid form or have a bulky size. The objective of this thesis is to provide solutions to the aforementioned challenges

Analysis and design of wideband voltage controlled oscillators using self-oscillating active inductors.

Voltage controlled oscillators (VCOs) are essential components of RF circuits used in transmitters and receivers as sources of carrier waves with variable frequencies. This, together with a rapid development of microelectronic circuits, led to an extensive research on integrated implementations of the oscillator circuits. One of the known approaches to oscillator design employs resonators with active inductors electronic circuits simulating the behavior of passive inductors using only transistors and capacitors. Such resonators occupy only a fraction of the silicon area necessary for a passive inductor, and thus allow to use chip area more eectively. The downsides of the active inductor approach include: power consumption and noise introduced by transistors. This thesis presents a new approach to active inductor oscillator design using selfoscillating active inductor circuits. The instability necessary to start oscillations is provided by the use of a passive RC network rather than a power consuming external circuit employed in the standard oscillator approach. As a result, total power consumption of the oscillator is improved. Although, some of the active inductors with RC circuits has been reported in the literature, there has been no attempt to utilise this technique in wideband voltage controlled oscillator design. For this reason, the dissertation presents a thorough investigation of self-oscillating active inductor circuits, providing a new set of design rules and related trade-os. This includes: a complete small signal model of the oscillator, sensitivity analysis, large signal behavior of the circuit and phase noise model. The presented theory is conrmed by extensive simulations of wideband CMOS VCO circuit for various temperatures and process variations. The obtained results prove that active inductor oscillator performance is obtained without the use of standard active compensation circuits. Finally, the concept of self-oscillating active inductor has been employed to simple and fast OOK (On-Off Keying) transmitter showing energy eciency comparable to the state of the art implementations reported in the literature

Ultra-Low-Power Sensors and Receivers for IoT Applications

The combination of ultra-low power analog front-ends and CMOS-compatible transducers enable new applications, such as environmental monitors, household appliances, health trackers, etc. that are seamlessly integrated into our daily lives. Furthermore, wireless connectivity allows many of these sensors to operate both independently and collectively. These techniques collectively fulfil the recent surge of internet-of-things (IoT) applications that have the potential to fundamentally change daily life for millions of people.In this dissertation, the circuit and system design of wireless receivers and sensors is presented that explores the challenges of implementing long lifespan, high accuracy, and large coverage range IoT sensor networks. The first is a wake-up receiver (WuRX), which continuously monitors the RF environment to wake up a higher-power radio upon detection of a predetermined RF signature. This work both improves sensitivity and reduces power over prior art through a multi-faceted design featuring an impedance transformation network with large passive voltage gain, an active envelope detector with high input impedance to facilitate large passive voltage gain, a low-power precision comparator, and a low-leakage digital baseband correlator.Although pushing the prior WuRX performance boundary by orders of magnitude, the first work shows moderate sensitivity, inferior temperature robustness, and large area with external lumped components. Thus, the second work shows a miniaturized WuRX that is temperature-compensated, yet still consumes only nano-watt power and millimeter area while operating at 9 GHz. To further reduce the area, a global common-mode feedback is utilized across the envelope detector and baseband amplifier that eliminates the need for off-chip ac-coupling components. Multiple temperature-compensation techniques are proposed to maintain constant bandwidth of the signal path and constant clock frequency. Both WuRXs operate at 0.4 V supply, consume near-zero power and achieve ~-70 dBm sensitivity.Lastly, the first reported CMOS 2-in-1 relative humidity and temperature sensor is presented. A unified analog front-end interfaces on-chip transducers and converts the inputs into a frequency vis a high-linearity frequency-locked loop. An incomplete-settling switched-capacitor-based Wheatstone bridge is proposed to sense the inputs in a power-efficient fashion