A design for testability study on a high performance automatic gain control circuit.

A comprehensive testability study on a commercial automatic gain control circuit is presented which aims to identify design for testability (DfT) modifications to both reduce production test cost and improve test quality. A fault simulation strategy based on layout extracted faults has been used to support the study. The paper proposes a number of DfT modifications at the layout, schematic and system levels together with testability. Guidelines that may well have generic applicability. Proposals for using the modifications to achieve partial self test are made and estimates of achieved fault coverage and quality levels presente

Conception pour la testabilité des systèmes biomédicaux implantables

Architecture générale des systèmes implantables -- Principes de stimulation électrique -- Champs d'application des systèmes implantables -- Les particularités des circuits implantables -- Tendance future -- Conception pour la testabilité de la partie numérique des circuits implantables -- "Desigh and realization of an accurate built-in current sensor for Iddq testing and power dissipation measurement -- Conception pour la testabilité de la partie analogique des circuits implantables -- BIST for digital-to-analog and Analogo-to-digital converters -- Efficient and accurate testing of analog-to-digital converters using oscillation test method -- Design for testability of Embedded integrated operational amplifiers -- Vérification des interfaces bioélectroniques des systèmes implantables -- Monitorin the electrode and lead failures in implanted microstimulators and sensors -- Capteurs de température intégrés pour la vérification de l'état thermique des puces dédiées -- Built-in temperature sensors for on-line thermal monitoring of microelectronic structures -- Un protocole de communication fiable pour la programmation et la télémétrie des système implantables -- A reliable communication protoco for externally controlled biomedical implanted devices

Quiescent current testing of CMOS data converters

Power supply quiescent current (IDDQ) testing has been very effective in VLSI circuits designed in CMOS processes detecting physical defects such as open and shorts and bridging defects. However, in sub-micron VLSI circuits, IDDQ is masked by the increased subthreshold (leakage) current of MOSFETs affecting the efficiency of I¬DDQ testing. In this work, an attempt has been made to perform robust IDDQ testing in presence of increased leakage current by suitably modifying some of the test methods normally used in industry. Digital CMOS integrated circuits have been tested successfully using IDDQ and IDDQ methods for physical defects. However, testing of analog circuits is still a problem due to variation in design from one specific application to other. The increased leakage current further complicates not only the design but also testing. Mixed-signal integrated circuits such as the data converters are even more difficult to test because both analog and digital functions are built on the same substrate. We have re-examined both IDDQ and IDDQ methods of testing digital CMOS VLSI circuits and added features to minimize the influence of leakage current. We have designed built-in current sensors (BICS) for on-chip testing of analog and mixed-signal integrated circuits. We have also combined quiescent current testing with oscillation and transient current test techniques to map large number of manufacturing defects on a chip. In testing, we have used a simple method of injecting faults simulating manufacturing defects invented in our VLSI research group. We present design and testing of analog and mixed-signal integrated circuits with on-chip BICS such as an operational amplifier, 12-bit charge scaling architecture based digital-to-analog converter (DAC), 12-bit recycling architecture based analog-to-digital converter (ADC) and operational amplifier with floating gate inputs. The designed circuits are fabricated in 0.5 μm and 1.5 μm n-well CMOS processes and tested. Experimentally observed results of the fabricated devices are compared with simulations from SPICE using MOS level 3 and BSIM3.1 model parameters for 1.5 μm and 0.5 μm n-well CMOS technologies, respectively. We have also explored the possibility of using noise in VLSI circuits for testing defects and present the method we have developed

Test estructural i predictiu per a circuits RF CMOS

En aquesta tesi s’ha desenvolupat una tècnica de test que permet testar un LNA i un mesclador, situats en el capçal RF d’un receptor CMOS, en una configuració de test semblant al mode normal de funcionament. La circuiteria necessària per a implementar aquesta tècnica consta d’un generador IF, per a generar el senyal IF de test, i d’un mesclador auxiliar, per a obtenir el senyal RF de test. Les observables de test escollides han estat l’amplitud de la tensió de sortida del mesclador i el component DC del corrent de consum. S’ha estudiat l’eficàcia de la tècnica de test proposada utilitzant les estratègies de test estructural i predictiu, mitjançant simulacions i mesures experimentals. La seva eficàcia és comparable a altres tècniques de test existents, però l’àrea addicional dedicada a la circuiteria test és inferior.En esta tesis se ha desarrollado una técnica de test que permite verificar un LNA y un mezclador, situados en el cabezal RF de un receptor CMOS, en una configuración de test similar al modo normal de funcionamiento. Los circuitos necesarios para implementar esta técnica son: un generador IF, que permite generar la señal IF de test, y un mezclador auxiliar, para obtener la señal RF de test. Las observables de test seleccionadas han sido la amplitud de la tensión de salida y la componente DC de la corriente de consumo. Se ha estudiado la eficacia de la técnica propuesta usando las estrategias de test estructural y predictiva, mediante simulaciones y medidas experimentales. Su eficacia es comparable a otras técnicas existentes, pero el área dedicada a la circuiteria de test es inferior.This PhD thesis develops a test technique intended for the RF front end of CMOS integrated receivers. This test technique allows testing individually the building blocks of the receiver in a sequential way. The test mode configuration of each block is similar to the normal mode operation. The auxiliary circuitry required to generate the test stimuli consists of an IF generator, which generates the IF test signal, and an auxiliary mixer that produces the RF test signal by mixing the IF test signal with the local oscillator signal. The test observables selected for the test are the voltage amplitude after the IF amplifier, and the DC component of the supply current in each block. The capability of the proposed test technique to perform structural and predictive test strategies has been validated by simulation and experimentally. Its efficiency is comparable to other existing techniques, but the silicon area overhead is lower

Design et test pour la haute performance d'un convertisseur A/D basé sur l'architecture "subranging"

Les architectures des convertisseurs A/N -- Un nouveau A/n pour des applications à haute résolution et haute vitesse -- Un commutateur actif en mode courant pour des applications de hautes performances à faibles tensions -- Un nouveau convertisseur A/N "subranging" en mode courant pour des applications à haute vitesse -- Un nouveau BIST numérique intégré pour convertisseurs analogique-numérique

Symbolic tolerance and sensitivity analysis of large scale electronic circuits

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