Lithium niobate RF-MEMS oscillators for IoT, 5G and beyond

This dissertation focuses on the design and implementation of lithium niobate (LiNbO3) radiofrequency microelectromechanical (RF-MEMS) oscillators for internet-of-things (IoT), 5G and beyond. The dissertation focuses on solving two main problems found nowadays in most of the published works: the narrow tuning range and the low operating frequency (sub 3 GHz) acoustic oscillators currently deliver. The work introduced here enables wideband voltage-controlled MEMS oscillators (VCMOs) needed for emerging applications in IoT. Moreover, it enables multi-GHz (above 8 GHz) RF-MEMS oscillators through harnessing over mode resonances for 5G and beyond. LiNbO3 resonators characterized by high-quality factor (Q), high electromechanical coupling (kt2), and high figure-of-merit (FoMRES= Q kt2) are crucial for building the envisioned high-performance oscillators. Those oscillators can be enabled with lower power consumption, wider tuning ranges, and a higher frequency of oscillation when compared to other state-of-the-art (SoA) RF-MEMS oscillators. Tackling the tuning range issue, the first VCMO based on the heterogeneous integration of a high Q LiNbO3 RF-MEMS resonator and complementary metal-oxide semiconductor (CMOS) is demonstrated in this dissertation. A LiNbO3 resonator array with a series resonance of 171.1 MHz, a Q of 410, and a kt2 of 12.7% is adopted, while the TSMC 65 nm RF LP CMOS technology is used to implement the active circuitry with an active area of 220×70 µm2. Frequency tuning of the VCMO is achieved by programming a binary-weighted digital capacitor bank and a varactor that are both connected in series to the resonator. The measured best phase noise performances of the VCMO are -72 and -153 dBc/Hz at 1 kHz and 10 MHz offsets from 178.23 and 175.83 MHz carriers, respectively. The VCMO consumes a direct current (DC) of 60 µA from a 1.2 V supply while realizing a tuning range of 2.4 MHz (~ 1.4% tuning range). Such VCMOs can be applied to enable ultralow-power, low phase noise, and wideband RF synthesis for emerging applications in IoT. Moreover, the first VCMO based on LiNbO3 lateral overtone bulk acoustic resonator (LOBAR) is demonstrated in this dissertation. The LOBAR excites over 30 resonant modes in the range of 100 to 800 MHz with a frequency spacing of 20 MHz. The VCMO consists of a LOBAR in a closed-loop with two amplification stages and a varactor-embedded tunable LC tank. By the bias voltage applied to the varactor, the tank can be tuned to change the closed-loop gain and phase responses of the oscillator so that Barkhausen’s conditions are satisfied for the targeted resonant mode. The tank is designed to allow the proposed VCMO to lock to any of the ten overtones ranging from 300 to 500 MHz. These ten tones are characterized by average Qs of 2100, kt2 of 1.5%, FoMRES of 31.5 enabling low phase noise, and low-power oscillators crucial for IoT. Owing to the high Qs of the LiNbO3 LOBAR, the measured VCMO shows a close-in phase noise of -100 dBc/Hz at 1 kHz offset from a 300 MHz carrier and a noise floor of -153 dBc/Hz while consuming 9 mW. With further optimization, this VCMO can lead to direct RF synthesis for ultra-low-power transceivers in multi-mode IoT nodes. Tackling the multi-GHz operation problem, the first Ku-band RF-MEMS oscillator utilizing a third antisymmetric overtone (A3) in a LiNbO3 resonator is presented in the dissertation. Quarter-wave resonators are used to satisfy Barkhausen’s oscillation conditions for the 3rd overtone while suppressing the fundamental and higher-order resonances. The oscillator achieves measured phase noise of -70 and -111 dBc/Hz at 1 kHz and 100 kHz offsets from a 12.9 GHz carrier while consuming 20 mW of dc power. The oscillator achieves a FoMOSC of 200 dB at 100 kHz offset. The achieved oscillation frequency is the highest reported to date for a MEMS oscillator. In addition, this dissertation introduces the first X-band RF-MEMS oscillator built using CMOS technology. The oscillator consists of an acoustic resonator in a closed loop with cascaded RF tuned amplifiers (TAs) built on TSMC RF GP 65 nm CMOS. The TAs bandpass response, set by on-chip inductors, satisfies Barkhausen's oscillation conditions for A3 only. Two circuit variations are implemented. The first is an 8.6 GHz standalone oscillator with a source-follower buffer for direct 50 Ω-based measurements. The second is an oscillator-divider chain using an on-chip 3-stage divide-by-2 frequency divider for a ~1.1 GHz output. The standalone oscillator achieves measured phase noise of -56, -113, and -135 dBc/Hz at 1 kHz, 100 kHz, and 1 MHz offsets from an 8.6 GHz output while consuming 10.2 mW of dc power. The oscillator also attains a FoMOSC of 201.6 dB at 100 kHz offset, surpassing the SoA electromagnetic (EM) and RF-MEMS based oscillators. The oscillator-divider chain produces a phase noise of -69.4 and -147 dBc/Hz at 1 kHz and 1 MHz offsets from a 1075 MHz output while consuming 12 mW of dc power. Its phase noise performance also surpasses the SoA L-band phase-locked loops (PLLs). The demonstrated performance shows the strong potential of microwave acoustic oscillators for 5G frequency synthesis and beyond. This work will enable low-power 5G transceivers featuring high speed, high sensitivity, and high selectivity in small form factors

Ultra Low Power FM-UWB Transceiver for High-Density Wireless Sensor Networks

The WiseSkin project aims to provide a non-invasive solution for restoration of a natural sense of touch to persons using prosthetic limbs. By embedding sensor nodes into the silicone coating of the prosthesis, which acts as a sensory skin, WiseSkin targets to provide improved gripping, manipulation and mobility for amputees. Flexibility, freedom of movement and comfort demand unobtrusive, highly miniaturized, low-power sensing capabilities built into the artificial skin, which is then integrated with a sensory feedback system. Wireless communication between the sensor nodes provides more flexibility, better scalability and robustness compared to wired solution, and is therefore a preferred approach for WiseSkin. Design of an RF transceiver tailored for the specific needs of WiseSkin is the topic of this work. The properties of FM ultra-wide band (FM-UWB) modulation make it a good candidate for High-Density Wireless Sensor Networks (HD-WSN). The proposed FM-UWB receivers take advantage of short range to reduce power consumption, and exploit robustness of this wideband modulation scheme. The LNA, identified as the biggest consumer, is removed and signal is directly converted to dc, where amplification and demodulation are performed. Owing to 500 MHz bandwidth, frequency offset and phase noise can be tolerated, and a low-power, free-running ring oscillator can be used to generate the LO signal. The receiver is referred to as an approximate zero-IF receiver. Two receiver architectures are studied. The first one performs quadrature downconversion, and owing to the demodulator linearity, provides the multi-user capability. In the second receiver, quadrature demodulation is replaced by the single-ended one. Due to the nature of the demodulator, sensitivity degrades, and multiple FM-UWB signals cannot be resolved, but the consumption is almost halved compared to the first receiver. The proposed approach is verified through two integrations, both in a standard 65 nm bulk CMOS process. In the first run, a standalone quadrature receiver was integrated. Power consumption of 423 uW was measured, while achieving -70 dBm sensitivity. Good narrow-band interference rejection and multiuser capability with up to 4 FM-UWB channels could be achieved. In the second run, a full transceiver is integrated, with both quadrature and single-ended receivers and a transmitter, all sharing a single IO pad, without the need for any external passive components or switches. The quadrature receiver, with on-chip baseband processing and multi-user support, in this case consumes 550 uW, with a sesensitivity of -68 dBm. The low power receiver consumes 267 uW, and provides -57 dBm sensitivity, at a single FM-UWB channel. The implemented trantransmitter transmits a 100 kb/s FM-UWB signal at -11.4 dBm, while drawing 583 uW from the 1 V supply. The on-chip clock recovery allows reference frequency offset up to 8000 ppm. Since state of the art on-chip RC oscillators can provide below 2100 ppm across the temperature range of interest, the implemented transceiver demonstrates the feasibility of a fully integrated FM-UWB radio with no need for a quartz reference or any external components. In addition, the transceiver can tolerate up to 3 dBm narrow-band interferer at 2.4 GHz. Such a strong signal can be used to remotely power the sensor nodes inside the artificial skin and enable a truly wirelessWiseSkin solution

Low power receivers for wireless sensor networks

Wireless sensor networks are becoming important in several monitoring and sensing applications. Ultra low power consumption in the sensor nodes is important for extending the battery life of the nodes. In this dissertation, two low power BFSK receiver architectures are proposed and verified with prototype implementations in silicion. A 2.4 GHz 1 Mb/s polyphase filter (PPF) BFSK receiver demonstrates ±180 ppm frequency offset tolerance (FOT) and 40 dB adjacent channel rejection (ACR) at a modulation index (MI) of 2, with a power consumption of 1.9 mW. High FOT at low MI is achieved by a frequency-to-energy conversion architecture using PPFs without any frequency correction. The proposed hybrid topology of the PPF provides an improved ACR at reduced power. To further improve the energy efficiency, a low energy 900 MHz mixer-less BFSK receiver is designed. High gain frequency-to-amplitude conversion and better sensitivity is achieved by a linear amplifier with Q-enhanced LC tank, eliminating the need for local oscillators and mixers. With a power consumption of 500 μW, the receiver achieves sensitivities of -90 dBm and -76 dBm for data rates of 0.5 Mb/s and 6 Mb/s, respectively. The energy efficiency is 80 pJ/b when operating at 6 Mb/s