先端プロセス技術における混載SRAMの高信頼・低電力化に関する研究

13301甲第4843号博士（工学）金沢大学博士論文本文Ful

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

21st Century Nanostructured Materials

Nanostructured materials (NMs) are attracting interest as low-dimensional materials in the high-tech era of the 21st century. Recently, nanomaterials have experienced breakthroughs in synthesis and industrial and biomedical applications. This book presents recent achievements related to NMs such as graphene, carbon nanotubes, plasmonic materials, metal nanowires, metal oxides, nanoparticles, metamaterials, nanofibers, and nanocomposites, along with their physical and chemical aspects. Additionally, the book discusses the potential uses of these nanomaterials in photodetectors, transistors, quantum technology, chemical sensors, energy storage, silk fibroin, composites, drug delivery, tissue engineering, and sustainable agriculture and environmental applications

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems

CMOS SPAD-based image sensor for single photon counting and time of flight imaging

The facility to capture the arrival of a single photon, is the fundamental limit to the detection of quantised electromagnetic radiation. An image sensor capable of capturing a picture with this ultimate optical and temporal precision is the pinnacle of photo-sensing. The creation of high spatial resolution, single photon sensitive, and time-resolved image sensors in complementary metal oxide semiconductor (CMOS) technology offers numerous benefits in a wide field of applications. These CMOS devices will be suitable to replace high sensitivity charge-coupled device (CCD) technology (electron-multiplied or electron bombarded) with significantly lower cost and comparable performance in low light or high speed scenarios. For example, with temporal resolution in the order of nano and picoseconds, detailed three-dimensional (3D) pictures can be formed by measuring the time of flight (TOF) of a light pulse. High frame rate imaging of single photons can yield new capabilities in super-resolution microscopy. Also, the imaging of quantum effects such as the entanglement of photons may be realised. The goal of this research project is the development of such an image sensor by exploiting single photon avalanche diodes (SPAD) in advanced imaging-specific 130nm front side illuminated (FSI) CMOS technology. SPADs have three key combined advantages over other imaging technologies: single photon sensitivity, picosecond temporal resolution and the facility to be integrated in standard CMOS technology. Analogue techniques are employed to create an efficient and compact imager that is scalable to mega-pixel arrays. A SPAD-based image sensor is described with 320 by 240 pixels at a pitch of 8μm and an optical efficiency or fill-factor of 26.8%. Each pixel comprises a SPAD with a hybrid analogue counting and memory circuit that makes novel use of a low-power charge transfer amplifier. Global shutter single photon counting images are captured. These exhibit photon shot noise limited statistics with unprecedented low input-referred noise at an equivalent of 0.06 electrons. The CMOS image sensor (CIS) trends of shrinking pixels, increasing array sizes, decreasing read noise, fast readout and oversampled image formation are projected towards the formation of binary single photon imagers or quanta image sensors (QIS). In a binary digital image capture mode, the image sensor offers a look-ahead to the properties and performance of future QISs with 20,000 binary frames per second readout with a bit error rate of 1.7 x 10-3. The bit density, or cumulative binary intensity, against exposure performance of this image sensor is in the shape of the famous Hurter and Driffield densitometry curves of photographic film. Oversampled time-gated binary image capture is demonstrated, capturing 3D TOF images with 3.8cm precision in a 60cm range

Understanding Quantum Technologies 2022

Understanding Quantum Technologies 2022 is a creative-commons ebook that provides a unique 360 degrees overview of quantum technologies from science and technology to geopolitical and societal issues. It covers quantum physics history, quantum physics 101, gate-based quantum computing, quantum computing engineering (including quantum error corrections and quantum computing energetics), quantum computing hardware (all qubit types, including quantum annealing and quantum simulation paradigms, history, science, research, implementation and vendors), quantum enabling technologies (cryogenics, control electronics, photonics, components fabs, raw materials), quantum computing algorithms, software development tools and use cases, unconventional computing (potential alternatives to quantum and classical computing), quantum telecommunications and cryptography, quantum sensing, quantum technologies around the world, quantum technologies societal impact and even quantum fake sciences. The main audience are computer science engineers, developers and IT specialists as well as quantum scientists and students who want to acquire a global view of how quantum technologies work, and particularly quantum computing. This version is an extensive update to the 2021 edition published in October 2021.Comment: 1132 pages, 920 figures, Letter forma