32 research outputs found

    A self-powered single-chip wireless sensor platform

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    Internet of thingsā€ require a large array of low-cost sensor nodes, wireless connectivity, low power operation and system intelligence. On the other hand, wireless biomedical implants demand additional specifications including small form factor, a choice of wireless operating frequencies within the window for minimum tissue loss and bio-compatibility This thesis describes a low power and low-cost internet of things system suitable for implant applications that is implemented in its entirety on a single standard CMOS chip with an area smaller than 0.5 mm2. The chip includes integrated sensors, ultra-low-power transceivers, and additional interface and digital control electronics while it does not require a battery or complex packaging schemes. It is powered through electromagnetic (EM) radiation using its on-chip miniature antenna that also assists with transmit and receive functions. The chip can operate at a short distance (a few centimeters) from an EM source that also serves as its wireless link. Design methodology, system simulation and optimization and early measurement results are presented

    Dynamically Controllable Integrated Radiation and Self-Correcting Power Generation in mm-Wave Circuits and Systems

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    This thesis presents novel design methodologies for integrated radiators and power generation at mm-wave frequencies that are enabled by the continued integration of various electronic and electromagnetic (EM) structures onto the same substrate. Beginning with the observation that transistors and their connections to EM radiating structures on an integrated substrate are essentially free, the concept of multi-port driven (MPD) radiators is introduced, which opens a vast design space that has been generally ignored due to the cost structure associated with discrete components that favors fewer transistors connected to antennas through a single port. From Maxwell's equations, a new antenna architecture, the radial MPD antennas based on the concept of MPD radiators, is analyzed to gain intuition as to the important design parameters that explain the wide-band nature of the antenna itself. The radiator is then designed and implemented at 160 GHz in a 0.13 um SiGe BiCMOS process, and the single element design has a measured effective isotropic radiated power (EIRP) of +4.6 dBm with a total radiated power of 0.63 mW. Next, the radial MPD radiator is adapted to enable dynamic polarization control (DPC). A DPC antenna is capable of controlling its radiated polarization dynamically, and entirely electronically, with no mechanical reconfiguration required. This can be done by having multiple antennas with different polarizations, or within a single antenna that has multiple drive points, as in the case of the MPD radiator with DPC. This radiator changes its polarization by adjusting the relative phase and amplitude of its multiple ports to produce polarizations with any polarization angle, and a wide range of axial ratios. A 2x1 MPD radiator array with DPC at 105 GHz is presented whose measurements show control of the polarization angle throughout the entire 0 degree through 180 degree range while in the linear polarization mode and maintaining axial ratios above 10 dB in all cases. Control of the axial ratio is also demonstrated with a measured range from 2.4 dB through 14 dB, while maintaining a fixed polarization angle. The radiator itself has a measured maximum EIRP of +7.8 dBm, with a total radiated power of 0.9 mW, and is capable of beam steering. MPD radiators were also applied in the domain of integrated silicon photonics. For these designs, the driver transistor circuitry was replaced with silicon optical waveguides and photodiodes to produce a 350 GHz signal. Three of these optical MPD radiator designs have been implemented as 2x2 arrays at 350 GHz. The first is a beam forming array that has a simulated gain of 12.1 dBi with a simulated EIRP of -2 dBm. The second has the same simulated performance, but includes optical phase modulators that enable two-dimensional beam steering. Finally, a third design incorporates multi-antenna DPC by combining the outputs of both left and right handed circularly polarized MPD antennas to produce a linear polarization with controllable polarization angle, and has a simulated gain of 11.9 dBi and EIRP of -3 dBm. In simulation, it can tune the polarization from 0 degrees through 180 degrees while maintaining a radiated power that has a 0.35 dB maximum deviation from the mean. The reliability of mm-wave radiators and power amplifiers was also investigated, and two self-healing systems have been proposed. Self-healing is a global feedback method where integrated sensors detect the performance of the circuit after fabrication and report that data to a digital control algorithm. The algorithm then is capable of setting actuators that can control the performance of the mm-wave circuit and counteract any performance degradation that is observed by the sensors. The first system is for a MPD radiator array with a partially integrated self-healing system. The self-healing MPD radiator senses substrate modes through substrate mode pickup sensors and infers the far-field radiated pattern from those sensors. DC current sensors are also included to determine the DC power consumption of the system. Actuators are implemented in the form of phase and amplitude control of the multiple drive points. The second self-healing system is a fully integrated self-healing power amplifier (PA) at 28 GHz. This system measures the output power, gain and efficiency of the PA using radio frequency (RF) power sensors, DC current sensors and junction temperature sensors. The digital block is synthesized from VHDL code on-chip and it can actuate the output power combining matching network using tunable transmission line stubs, as well as the DC operating point of the amplifying transistors through bias control. Measurements of 20 chips confirm self-healing for two different algorithms for process variation and transistor mismatch, while measurements from 10 chips show healing for load impedance mismatch, and linearity healing. Laser induced partial and total transistor failure show the benefit of self-healing in the case of catastrophic failure, with improvements of up to 3.9 dB over the default case. An exemplary yield specification shows self-healing improving the yield from 0% up through 80%.</p

    Stretching the limits of dynamic range, shielding effectiveness, and multiband frequency response

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    In this dissertation, an RF MEMS variable capacitor suitable for applications requiring ultrawide capacitive tuning ranges is reported. The device uses an electrostatically tunable liquid dielectric interface to continuously vary the capacitance without the use of any moving parts. As compared to existing MEMS varactors in literature, this device has an extremely simple design that can be implemented using simple fabrication methods that do not necessitate the use of clean room equipment. In addition, this varactor is particularly suited for incorporating a wide range of liquid dielectric materials for specific tuning ratio requirements. Additionally, the shielding effectiveness performance of graphene-doped ABS thin films is investigated. The use of graphene as a replacement for metal fillers in composite EMI shielding materials is quickly becoming a widely-investigated field in the electromagnetic compatibility community. By replacing conventional metal-based shielding methods with graphene-doped polymers, low-weight, field-use temporary shielding enclosures can be implemented that do not suffer from mechanical unreliability and corrosion/oxidation like a traditional metal enclosure. While the performance of composite EMI shielding materials has not yet surpassed metals, the advantages of polymer-based shielding methods could find usage in a variety of applications. Finally, mutliband pre-fractal antennas fabricated via 3D printing are reported. These devices are the first to incorporate the advantages of 3D printing (rapid prototyping, fabrication of complex geometries otherwise unobtainable) with the advantages of self-similar antennas (increased gain and multiband performance) in a single device. The Sierpinski tetrahedron-based antenna design was both computationally modeled and physically realized to illustrate its potential as a solution to enable true multiband communication platforms

    RF MEMS technology for millimeter-wave radar sensors

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    The dissertation discusses RF MEMS technology for millimeter-wave radar sensors. RF MEMS, which stands for radio frequency micro-electromechanical system, and radar sensor fundamentals are briefly introduced. Of particular interest are: Firstly, a self-aligned fabrication process for capacitive fixed-fixed beam RF MEMS components is disclosed. It enables scaling of the critical dimensions and reduces the number of processing steps by 40% as compared with a conventional RF MEMS fabrication process. Scaling of the critical dimensions of RF MEMS components offers the potential of submicrosecond T/R switching times. RF MEMS varactors with beam lengths of 30 Ī¼m are demonstrated using the self-aligned fabrication process, and the performance of a 4 by 4 RF MEMS varactor bank is discussed as well. At 20 GHz, the measured capacitance values range between 180.5 fF and 199.2 fF. The measured capacitance ratio is 1.15, when a driving voltage of 35 V is applied, and the measured loaded Q factor ranges between 14.5 and 10.8. The measured cold-switched power handling is 200 mW. The simulated switching time is 354.6 ns. Secondly, an analog RF MEMS slotline TTD phase shifter is disclosed, for use in conjunction with ultra wideband (UWB) tapered slot antennas, such as the Vivaldi aerial and the double exponentially tapered slot antenna. It is designed for transistor to transistor logic (TTL) bias voltage levels and exhibits a measured phase shift of 28.2Ā°/dB (7.8 ps/dB) and 59.2Ā°/cm at 10 GHz, maintaining a 75 ā„¦; differential impedance match (S11dd ā‰¤ -15.8 dB). The input third-order intercept point (IIP3) is 5 dBm at 10 GHz for a Ī”f of 50 kHz, measured in a 100 ā„¦ differential transmission line system.Ph.D.Electrical EngineeringUniversity of Michiganhttp://deepblue.lib.umich.edu/bitstream/2027.42/61348/1/vcaeken.pd

    Antenna-coupled Infrared Focal Plane Array

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    In this dissertation a new type of infrared focal plan array (IR FPA) was investigated, consisting of antenna-coupled microbolometer fabricated using electron-beam lithography. Four different antenna designs were experimentally demonstrated at 10-micron wavelength: dipole, bowtie, square-spiral, and log-periodic. The main differences between these antenna types were their bandwidth, collection area, angular reception pattern, and polarization. To provide pixel collection areas commensurate with typical IR FPA requirements, two configurations were investigated: a two-dimensional serpentine interconnection of individual IR antennas, and a Fresnel-zone-plate (FZP) coupled to a single-element antenna. Optimum spacing conditions for the two-dimensional interconnect were developed. Increased sensitivity was demonstrated using a FZP-coupled design. In general, it was found that the configuration of the antenna substrate material was critical for optimization of sensitivity. The best results were obtained using this membranes of silicon nitride to enhance the thermal isolation of the antenna-coupled bolometers. In addition, choice of the bolometer material was also important, with the best results obtained using vanadium oxide. Using optimum choices for all parameters, normalized sensitivity (D*) values in the range of mid 108[āˆšHz/W] were demonstrated for antenna-coupled IR sensors, and directions for further improvements were identified. Successful integration of antenna-coupled pixels with commercial readout integrated circuits was also demonstrated

    Terahertz Technology and Its Applications

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    The Terahertz frequency range (0.1 ā€“ 10)THz has demonstrated to provide many opportunities in prominent research fields such as high-speed communications, biomedicine, sensing, and imaging. This spectral range, lying between electronics and photonics, has been historically known as ā€œterahertz gapā€ because of the lack of experimental as well as fabrication technologies. However, many efforts are now being carried out worldwide in order improve technology working at this frequency range. This book represents a mechanism to highlight some of the work being done within this range of the electromagnetic spectrum. The topics covered include non-destructive testing, teraherz imaging and sensing, among others

    Interpolation based wideband beamforming frontends for 5G millimetre wave communication

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    Metamaterial based CMOS terahertz focal plane array

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    The distinctive properties of terahertz radiation have driven an increase in interest to develop applications in the imaging field. The non-ionising radiation properties and transparency to common non-conductive materials have led research into developing a number of important applications including security screening, medical imaging, explosive detection and wireless communications. The proliferation of these applications into everyday life has been hindered by the lack of inexpensive, compact and room-temperature terahertz sources and detectors. These issues are addressed in this work by developing an innovative, uncooled, compact, scalable and low-cost terahertz detector able to target single frequency imaging applications such as stand-off imaging and non-invasive package inspection. The development of two types of metamaterial (MM) based terahertz focal plane arrays (FPAs) monolithically integrated in a standard complementary metal-oxide semiconductor (CMOS) technology are presented in this Thesis. The room temperature FPAs are composed of periodic cross-shaped resonant MM absorbers, microbolometer sensors in every pixel and front-end readout electronics fabricated in a 180 nm six metal layer CMOS process from Texas Instruments (TI). The MM absorbers are used due to the lack of natural selective absorbing materials of terahertz radiation. These subwavelength structures are made directly in the metallic and insulating layers available in the CMOS foundry process. When the MM structures are distributed in a periodic fashion, they behave as a frequency-selective material and are able to absorb at the required frequency. The electromagnetic (EM) properties are determined by the MM absorber geometry rather than their composition, thus being completely customisable for different frequencies. Single band and broadband absorbers were designed and implemented in the FPAs to absorb at 2.5 THz where a natural atmospheric transmission window is found, thus reducing the signal loss in the imaging system. The new approach of terahertz imaging presented in this Thesis is based in coupling a MM absorber with a suitable microbolometer sensor. The MM structure absorbs the terahertz wave while the microbolometer sensor detects the localised temperature change, depending on the magnitude of the radiation. Two widely used microbolometer sensors are investigated to compare the sensitivity of the detectors. The two materials are Vanadium Oxide (VOx) and p-n silicon diodes both of which are widely used in infrared (IR) imaging systems. The VOx microbolometers are patterned above the MM absorber and the p-n diode microbolometers are already present in the CMOS process. The design and fabrication of four prototypes of FPAs with VOx microbolometers demonstrate the scalability properties to create high resolution arrays. The first prototype consists of a 5 x 5 array with a pixel size of 30 Ī¼m x 30 Ī¼m. An 8 x 8 array, a 64 x 64 array with serial readout and a 64 x 64 array with parallel readout are also presented. Additionally, a 64 x 64 array with parallel output readout electronics with p-n diode microbolometers was fabricated. The design, simulation, characterisation and fabrication of single circuit blocks and a complete 64 x 64 readout integrated circuit is thoroughly discussed in this Thesis. The absorption characteristics of the MMs absorbers, single VOx and p-n diode pixels, 5 x 5 VOx FPA and a 64 x 64 array for both microbolometer types demonstrate the concept of CMOS integration of a monolithic MM based terahertz FPA. The imaging performance using both transmission and reflection mode is demonstrated by scanning a metallic object hidden in a manila envelope and using a single pixel of the array as a terahertz detector. This new approach to make a terahertz imager has the advantages of creating a high sensitivity room temperature technology that is capable of scaling and low-cost manufacture

    Second IEEE/LEOS Benelux Chapter, November 26th, 1997, Eindhoven University of Technology, The Netherlands

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    Second IEEE/LEOS Benelux Chapter, November 26th, 1997, Eindhoven University of Technology, The Netherlands

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