A Wideband Inductorless CMOS Front-End for Software Defined

The number of wireless communication links is witnessing tremendous growth and new standards are being introduced at high pace. These standards heavily rely on digital signal processing, making CMOS the first technology of choice. However, RF CMOS circuit development is costly and time consuming due to mask costs and design iterations. This pleads for a Software Defined Radio approach, in which one piece of flexible radio hardware is re-used for different applications and standards, downloadable and under software control. To the best of our knowledge, little work has been done in this field based on CMOS technology. Recently, a bipolar downconverter front-end has been proposed [1]. In CMOS, only wideband low-noise amplifiers have been proposed, and some CMOS tuner ICs for satellite reception (which have less stringent noise requirements because they are preceded by an outdoor low-noise converter). This paper presents a wideband RF downconverter frontend in 0.18 um CMOS (also published in [2]), designed in the context of a research project exploring the feasibility of software defined radio, using a combined Bluetooth/WLAN receiver as a vehicle. Usually, RF receivers are optimised for low power consumption. In contrast, we have taken the approach to optimise for flexibility. The paper discusses the main system and circuit design choices, and assesses the achievable performance via measurements on a front-end implemented in 0.18um CMOS. The flexible design achieves a 0.2-2.2 GHz -3 dB bandwidth, a gain of 25 dB with 6 dB noise figure and +1 dBm IIP3

Design of a Folded Cascode Operational Amplifier in a 1.2 Micron Silicon-Carbide CMOS Process

This thesis covers the design of a Folded Cascode CMOS Operational Amplifier (Op-Amp) in Raytheon’s 1.2-micron Silicon Carbide (SiC) process. The use of silicon-carbide as a material for integrated circuits (ICs) is gaining popularity due to its ability to function at high temperatures outside the range of typical silicon ICs. The goal of this design was to create an operational amplifier suitable for use in a high temperature analog-to-digital converter application. The amplifier has been designed to have a DC gain of 50dB, a phase margin of 50 degrees, and a bandwidth of 2 MHz. The circuit’s application includes input ranging from 0 volts to 8 volts so a PMOS input differential pair was selected to allow the input range down to the VSS rail. The circuit has been designed to work over a temperature range of 25°C to 300°C

A power efficient neural spike recording channel with data bandwidth reduction

This paper presents a mixed-signal neural spike recording channel which features, as an added value, a simple and low-power data compression mechanism. The channel uses a band-limited differential low noise amplifier and a binary search data converter, together with other digital and analog blocks for control, programming and spike characterization. The channel offers a self-calibration operation mode and it can be configured both for signal tracking (to raw digitize the acquired neural waveform) and feature extraction (to build a first-order PWL approximation of the spikes). The prototype has been fabricated in a standard CMOS 0.13μm and occupies 400μm×400μm. The overall power consumption of the channel during signal tracking is 2.8μW and increases to 3.0μW average when the feature extraction operation mode is programmed.Ministerio de Ciencia e Innovación TEC2009-08447Junta de Andalucía TIC-0281

A 0.35 μm CMOS 17-bit@40-kS/s cascade 2-1 ΣΔ modulator with programmable gain and programmable chopper stabilization

This paper describes a 0.35μm CMOS chopper-stabilized Switched-Capacitor 2-1 cascade ΣDelta; modulator for automotive sensor interfaces. For a better fitting to the characteristics of different sensor outputs, the modulator includes a programmable set of gains (x0.5, x1, x2, and x4) and a programmable set of chopper frequencies (fs/16, fs/8, fs/4 and fs/2). It has also been designed to operate within the restrictive environmental conditions of automotive electronics (-40°C, 175°C). The modulator architecture has been selected after an exhaustive comparison among multiple ΣΔM topologies in terms of resolution, speed and power dissipation. The design of the modulator building blocks is based upon a top-down CAD methodology which combines simulation and statistical optimization at different levels of the modulator hierarchy. The circuit is clocked at 5.12MHz and consumes, all together, 14.7mW from a single 3.3-V supply. Experimental measurements result in 99.77dB of Dynamic Range (DR), which combined with the gain programmability leads to an overall DR of 112dB. This puts the presented design beyond the state-of-the-art according with the existing bibliography

A 300-800MHz Tunable Filter and Linearized LNA applied in a Low-Noise Harmonic-Rejection RF-Sampling Receiver

A multiband flexible RF-sampling receiver aimed at software-defined radio is presented. The wideband RF sampling function is enabled by a recently proposed discrete-time mixing downconverter. This work exploits a voltage-sensing LNA preceded by a tunable LC pre-filter with one external coil to demonstrate an RF-sampling receiver with low noise figure (NF) and high harmonic rejection (HR). The second-order LC filter provides voltage pre-gain and attenuates the source noise aliasing, and it also improves the HR ratio of the sampling downconverter. The LNA consists of a simple amplifier topology built from inverters and resistors to improve the third-order nonlinearity via an enhanced voltage mirror technique. The RF-sampling receiver employs 8 times oversampling covering 300 to 800 MHz in two RF sub-bands. The chip is realized in 65 nm CMOS and the measured gain across the band is between 22 and 28 dB, while achieving a NF between 0.8 to 4.3 dB. The IIP2 varies between +38 and +49 dBm and the IIP3 between -14 dBm and -9 dBm, and the third and fifth order HR ratios are more than 60 dB. The LNA and downconverter consumes 6 mW, and the clock generator takes 12 mW at 800 MHz RF.\ud \u

A mixed-signal integrated circuit for FM-DCSK modulation

This paper presents a mixed-signal application-specific integrated circuit (ASIC) for a frequency-modulated differential chaos shift keying (FM-DCSK) communication system. The chip is conceived to serve as an experimental platform for the evaluation of the FM-DCSK modulation scheme, and includes several programming features toward this goal. The operation of the ASIC is herein illustrated for a data rate of 500 kb/s and a transmission bandwidth in the range of 17 MHz. Using signals acquired from the test platform, bit error rate (BER) estimations of the overall FM-DCSK communication link have been obtained assuming wireless transmission at the 2.4-GHz ISM band. Under all tested propagation conditions, including multipath effects, the system obtains a BER = 10-3 for Eb/No lower than 28 dB.Ministerio de Ciencia y Tecnología TIC2003-0235

1.25 Gbit/s ITU-T G.984.2 burst-mode transimpedance amplifier without reset pins

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