Four-element phased-array beamformers and a self-interference canceling full-duplex transciver in 130-nm SiGe for 5G applications at 26 GHz

This thesis is on the design of radio-frequency (RF) integrated front-end circuits for next generation 5G communication systems. The demand for higher data rates and lower latency in 5G networks can only be met using several new technologies including, but not limited to, mm-waves, massive-MIMO, and full-duplex. Use of mm-waves provides more bandwidth that is necessary for high data rates at the cost of increased attenuation in air. Massive-MIMO arrays are required to compensate for this increased path loss by providing beam steering and array gain. Furthermore, full duplex operation is desirable for improved spectrum efficiency and reduced latency. The difficulty of full duplex operation is the self-interference (SI) between transmit (TX) and receive (RX) paths. Conventional methods to suppress this interference utilize either bulky circulators, isolators, couplers or two separate antennas. These methods are not suitable for fully-integrated full-duplex massive-MIMO arrays. This thesis presents circuit and system level solutions to the issues summarized above, in the form of SiGe integrated circuits for 5G applications at 26 GHz. First, a full-duplex RF front-end architecture is proposed that is scalable to massive-MIMO arrays. It is based on blind, RF self-interference cancellation that is applicable to single/shared antenna front-ends. A high resolution RF vector modulator is developed, which is the key building block that empowers the full-duplex frontend architecture by achieving better than state-of-the-art 10-b monotonic phase control. This vector modulator is combined with linear-in-dB variable gain amplifiers and attenuators to realize a precision self-interference cancellation circuitry. Further, adaptive control of this SI canceler is made possible by including an on-chip low-power IQ downconverter. It correlates copies of transmitted and received signals and provides baseband/dc outputs that can be used to adaptively control the SI canceler. The solution comes at the cost of minimal additional circuitry, yet significantly eases linearity requirements of critical receiver blocks at RF/IF such as mixers and ADCs. Second, to complement the proposed full-duplex front-end architecture and to provide a more complete solution, high-performance beamformer ICs with 5-/6- b phase and 3-/4-b amplitude control capabilities are designed. Single-channel, separate transmitter and receiver beamformers are implemented targeting massive- MIMO mode of operation, and their four-channel versions are developed for phasedarray communication systems. Better than state-of-the-art noise performance is obtained in the RX beamformer channel, with a full-channel noise figure of 3.3 d

A 24.25-30.5GHz Fully Integrated SiGe Phase Shifter/VGA/Power Amplifier in 0.13μm BiCMOS Technology for 5G Beamforming Applications

This paper presents a 24.25GHz to 30.5GHz wideband SiGe front-end module including a passive phase shifter (PS), a low impedance and low phase variation variable gain amplifier (VGA) and a linear power amplifier (PA) dedicated to beamforming architectures. The whole chip exhibits 33dB of maximum gain, 24dBm of saturation power (Psat) and 32.5% of maximum Power Added Efficiency (PAEmax) at 27GHz. Phase adjustment covers 360° with a minimum resolution of 5.6° and gain covers a 16dB range by 0.5dB steps. The circuit is implemented in a SiGe 130nm BiCMOS process and occupies 0.53 mm² without pads

SiGe BiCMOS RF front-ends for adaptive wideband receivers

The pursuit of dense monolithic integration and higher operating speed continues to push the integrated circuit (IC) fabrication technologies to their limits. The increasing process variation, associated with aggressive technology scaling, is having a negative impact on circuit yield in current IC technologies, and the problem is likely to become worse in the future. Circuit solutions that are more tolerant of the process variations are needed to fully utilize the benefits of technology scaling. The primary goal of this research is to develop high-frequency circuits that can deliver consistent performance even under the threat of increasing process variation. These circuits can be used to build ``self-healing" systems, which can detect process imperfections and compensate accordingly to optimize performance. In addition to improving yield, such adaptive circuits and systems can provide more robust and efficient solutions for a wide range of applications under varying operational and environmental conditions.Silicon-germanium (SiGe) BiCMOS technology is an ideal platform for highly integrated systems requiring both high-performance analog and radio-frequency (RF) circuits as well as large-scale digital functionality. This research is focused on designing circuit components for a high-frequency wideband self-healing receiver in SiGe BiCMOS technology. An adaptive image-reject mixer, low insertion-loss switches, a wideband low-noise amplifier (LNA), and a SiGe complementary LC oscillator were designed. Healing algorithms were developed, and automated self-healing of multiple parameters of the mixer was demonstrated in measurement. A monte-carlo simulation based methodology was developed to verify the effectiveness of the healing procedure. In summary, this research developed circuits, algorithms, simulation tools, and methods that are useful for building "self-healing" systems.Ph.D

SiGe BiCMOS 4-bit phase shifter and T/R module for X-band phased arrays

Current phased array RADAR (RAdio Detection And Ranging) systems conventionally employ transmit/receive (T/R) modules implemented in III-V technologies (such as GaAs and InP) and their usage is mainly restricted to military applications. The next generation phased array systems require thousands of T/R modules with lower cost, size and power consumption. Advances in SiGe BiCMOS process technologies make it a viable option for next generation phased array systems, especially for commercial applications. In the light of these trends, this thesis presents the design of a 4-bit SiGe X-band (8-12 GHz) passive phase shifter and the complete SiGe X-band T/R module, realized in IHP 0.25- m SiGe BiCMOS process. The phase shifter is based on switched lter topology, utilizing a low-pass network for phase shift state and isolated NMOS transistors are used for bypass state. It is composed of 22 , 45 and 90 bits and the 180 bit is realized by cascading two 90 bits. The return loss of each bit is better than 10 dB, the overall phase shifter has an average of 14 dB insertion loss. Minimum RMS phase error of 3 is obtained at 10.1 GHz. RMS phase error is better than 11 at 9.2-10.8 GHz band. The overall phase shifter occupies 0.9 mm2 area, has no DC power consumption and achieves input-referred 1-dB compression point of 15 dBm. The integration of a compact T/R module using the 4-bit phase shifter and the previously developed building blocks such as low-noise ampli er (LNA), power ampli er (PA) and single-pole double-throw (SPDT) switches is presented. The developed SiGe X-band T/R module occupies only 4.9 mm2 chip area. In 9-10 GHz band T/R module achieves a measured gain of 10-11.5 dB in receiver mode and 10.7- 12 dB gain in transmitter mode. A minimum RMS phase error of 5 is achieved at 9 GHz. Noise gure in receiver mode is measured between 4-6 dB while the IIP3 is receive mode is measured as -10.5 dB. Output power at 1-dB compression in transmit mode is 16 dBm. These parameters are achieved with a power consumption of 285 mW

High resolution, process and temperature compensated phase shifter design using a self generated look up table

Phase resolution is one of the most important parameters in phased array RADAR determining the precision of antenna beam direction and side-lobe level. Especially, in tracking applications the antenna directivity should be high and side-lobe levels must be low in order to abstain from the signals of Jammers. Phase shifters (PS) set phase resolution and directivity; therefore, they are the key components for phased arrays. Among the PS topologies, vector sum type comes forward due to its significant advantage over the other design techniques, in terms of insertion loss, phase error, area and operation bandwidth. However, in design of vector sum type PS, phase and amplitude errors in vectors, and phase insertion of variable gain amplifiers degrades the phase resolution performance of the PS. In order to overcome these issues and improve bit resolution (reduced phase step size and lower phase error while covering 360° phase range), and improve the tolerance on process - temperature variations, the proposed solution in this thesis is the design of a calibration circuit consisting of Power detector (PD), Analog to Digital Converter (ADC) and a Digital Processing Unit (DPU). The main objective of the calibration loop is the generation of a Look up Table (LUT) for target frequency band and at operating temperature. With this technique, the first 7-bit Phase shifter is designed in SiGe- BiCMOS technology, which also has highest fractional bandwidth in literature

SiGe based multiple-phase VCO operating for mm-wave frequencies

The ever-increasing demand for higher speed in wireless consumer applications has increased the interest in the unlicensed spectrum of 7 GHz around 60 GHz. The high atmospheric oxygen absorption at 60 GHz and small size of the antennas at this frequency requires the use of integrated phased-array systems to overcome the deficiencies of lossy channels at these frequencies. The phased arrays combine signals from multiple paths to obtain higher receiver sensitivity and directivity. The system thus requires phase-shifted voltage-controlled oscillator (VCO) signals to implement phase shifting in the local-oscillator (LO) path. In this research, the vector sum method to generate various phases of the signal at 60 GHz was investigated for its suitability in phased-array systems. The main focus was on improving the phase noise performance of the VCO. The VCO was implemented using a fully differential common-collector Colpitts oscillator in the cascode configuration, which was found to be the VCO configuration with acceptable phase noise performance and stability in the millimetre-wave range. The research focus was on modelling the phase noise of the VCO, and was performed by identifying the impulse sensitivity function for various noise sources, followed by analysing its effect on the linear time varying (LTV) model of the oscillators. The analysis led to a closed-form expression for the phase noise of the oscillator in terms of process and design parameters. The design was then optimised in terms of identified parameters to attain minimum phase noise. The phase noise expression using LTV theory and SpectreRF simulations reported the same optimum value for the design parameter, of around 0.3 for the capacitor ratio. The simulation results utilising the vector sum phase shifting method to generate multiple phase oscillator signals suggest its suitability in implementing phased-array systems in the millimetre-wave range. The vector sum was realised by generating quadrature signals from the oscillator using hybrid couplers. Variable gain amplifiers (VGAs) based on Gilbert mixer topology were used to combine the in-phase and quadrature phase signals to generate the phase-shifted oscillator signal. The gains of the VGAs were linearised by using a pre-distortion circuit, which was an inverse tanh cell. A fully differential 60 GHz VCO was fabricated using a SiGe process with a fT of 200 GHz. The fabricated integrated circuit (IC) measured at the wafer level had a centre frequency of 52.8 GHz and a tuning range of 7 GHz. It demonstrated a phase noise performance of -98.9 dBc/Hz at 1 MHz offset and a power dissipation of 140 mW, thus providing a VCO figure of merit of 172 dBc/Hz. It delivered a differential output power of 8 dBm and the IC occupied an area of 0.54 mm2, including the bondpads. It was thus concluded that a 10 % design margin for the tuning range is required while using SiGe BiCMOS technology. The simulation results demonstrate that the VCO, along with an active interpolator, provides a range of phase-shifted signals from 0° to 360° in steps of 22.5° for various gain settings of the VGAs. The power dissipation of the active interpolator is around 60 mW and the system could thus be employed in LO path shifting architecture of the phased arrays with increased power consumption.Thesis (PhD)--University of Pretoria, 2013.Electrical, Electronic and Computer Engineeringunrestricte

CMOS Signal Synthesizers for Emerging RF-to-Optical Applications

The need for clean and powerful signal generation is ubiquitous, with applications spanning the spectrum from RF to mm-Wave, to into and beyond the terahertz-gap. RF applications including mobile telephony and microprocessors have effectively harnessed mixed-signal integration in CMOS to realize robust on-chip signal sources calibrated against adverse ambient conditions. Combined with low cost and high yield, the CMOS component of hand-held devices costs a few cents per part per million parts. This low cost, and integrated digital processing, make CMOS an attractive option for applications like high-resolution imaging and ranging, and the emerging 5-G communication space. RADAR techniques when expanded to optical frequencies can enable micrometers of resolution for 3D imaging. These applications, however, impose upto 100x more exacting specifications on power and spectral purity at much higher frequencies than conventional RF synthesizers. This generation of applications will present unconventional challenges for transistor technologies - whether it is to squeeze performance in the conventionally used spectrum, already wrung dry, or signal generation and system design in the relatively emptier mm-Wave to sub-mmWave spectrum, much of the latter falling in the ``Terahertz Gap". Indeed, transistor scaling and innovative device physics leading to new transistor topologies have yielded higher cut-off frequencies in CMOS, though still lagging well behind SiGe and III-V semiconductors. To avoid multimodule solutions with functionality partitioned across different technologies, CMOS must be pushed out of its comfort zone, and technology scaling has to have accompanying breakthroughs in design approaches not only at the system but also at the block level. In this thesis, while not targeting a specific application, we seek to formulate the obstacles in synthesizing high frequency, high power and low noise signals in CMOS and construct a coherent design methodology to address them. Based on this, three novel prototypes to overcome the limiting factors in each case are presented. The first half of this thesis deals with high frequency signal synthesis and power generation in CMOS. Outside the range of frequencies where the transistor has gain, frequency generation necessitates harmonic extraction either as harmonic oscillators or as frequency multipliers. We augment the traditional maximum oscillation frequency metric (fmax), which only accounts for transistor losses, with passive component loss to derive an effective fmax metric. We then present a methodology for building oscillators at this fmax, the Maximum Gain Ring Oscillator. Next, we explore generating large signals beyond fmax through harmonic extraction in multipliers. Applying concepts of waveform shaping, we demonstrate a Power Mixer that engineers transistor nonlinearity by manipulating the amplitudes and relative phase shifts of different device nodes to maximize performance at a specific harmonic beyond device cut-off. The second half proposes a new architecture for an ultra-low noise phase-locked loop (PLL), the Reference-Sampling PLL. In conventional PLLs, a noisy buffer converts the slow, low-noise sine-wave reference signal to a jittery square-wave clock against which the phase of a noisy voltage-controlled oscillator (VCO) is corrected. We eliminate this reference buffer, and measure phase error by sampling the reference sine-wave with the 50x faster VCO waveform already available on chip, and selecting the relevant sample with voltage proportional to phase error. By avoiding the N-squared multiplication of the high-power reference buffer noise, and directly using voltage-mode phase error to control the VCO, we eliminate several noisy components in the controlling loop for ultra-low integrated jitter for a given power consumption. Further, isolation of the VCO tank from any varying load, unlike other contemporary divider-less PLL architectures, results in an architecture with record performance in the low-noise and low-spur space. We conclude with work that brings together concepts developed for clean, high-power signal generation towards a hybrid CMOS-Optical approach to Frequency-Modulated Continuous-Wave (FMCW) Light-Detection-And-Ranging (LIDAR). Cost-effective tunable lasers are temperature-sensitive and have nonlinear tuning profiles, rendering precise frequency modulations or 'chirps' untenable. Locking them to an electronic reference through an electro-optic PLL, and electronically calibrating the control signal for nonlinearity and ambient sensitivity, can make such chirps possible. Approaches that build on the body of advances in electrical PLLs to control the performance, and ease the specification on the design of optical systems are proposed. Eventually, we seek to leverage the twin advantages of silicon-intensive integration and low-cost high-yield towards developing a single-chip solution that uses on-chip signal processing and phased arrays to generate precise and robust chirps for an electronically-steerable fine LIDAR beam