A 0.2-to-2.0GHz 65nm CMOS Receiver without LNA achieving >11dBm IIP3 and <6.5 dB NF

Spurious-free dynamic range (SFDR) is a key specification of radio receivers and spectrum analyzers, characterizing the maximum distance between signal and noise+distortion. SFDR is limited by the linearity (intercept point IIP3 mostly, sometimes IIP2) and the noise floor. As receivers already have low noise figure (NF) there is more room for improving the SFDR by increasing the linearity. As there is a strong relation between distortion and voltage swing, it is challenging to maintain or even improve linearity intercept points in future CMOS processes with lower supply voltages. Circuits can be linearized with feedback but loop gain at RF is limited [1]. Moreover, after LNA gain, mixer linearity becomes even tougher. If the amplification is postponed to IF, much more loop gain is available to linearize the amplifier. This paper proposes such an LNA-less mixer-first receiver. By careful analysis and optimization of a passive mixer core [2,3] for low conversion loss and low noise folding it is shown that it is possible to realize IIP3≫11dBm and NF≪6.5dB, i.e. a remarkably high SFDR≫79dB in 1MHz bandwidth over a decade of RF frequencies

A receiver with in-band IIP3&gt;20dBm, exploiting cancelling of OpAmp finite-gain-induced distortion via negative conductance

Highly linear CMOS radio receivers increasingly exploit linear RF V-I conversion and passive down-mixing, followed by an OpAmp based Transimpedance Amplifier at baseband. Due to the finite OpAmp gain in wideband receivers operating with large signals, virtual ground is imperfect, inducing distortion currents. We propose to apply a negative conductance to cancel this distortion. In an RF receiver, this increases In-Band IIP3 from 9dBm to >20dBm, at the cost of 1.5dB extra NF and <10% power penalty. In 1MHz bandwidth, a Spurious-Free Dynamic Range of 85dB is achieved at <27mA up to 2GHz for 1.2V supply voltage

A 0.1-to-1.2GHz tunable 6th-order N-path channel-select filter with 0.6dB passband ripple and +7dBm blocker tolerance

Radio receivers should be robust to large out-of-band blockers with small degradation in their sensitivity. N-path mixers can be used as mixer-first receivers [1] with good linearity and RF filtering [2]. However, 1/f noise calls for large active device sizes for IF circuits and high power consumption. The 1/f noise issue can be relaxed by having RF gain. However, to avoid desensitization by large out-of-band blockers, a bandpass filter (BPF) with sharp cut-off frequency is required in front of the RF amplifiers. gm-C BPFs suffer from tight tradeoffs among DR, power consumption, Q and fc. Also, on-chip Q-enhanced LC BPFs [3] are not suitable due to low DR, large area and non-tunability. Therefore, bulky and non-tunable SAW filters are used. N-path BPFs offer high Q while their center frequency is tuned by the clock frequency [2]. Compared to gm-C filters, this technique decouples the required Q from the DR. The 4-path filter in [4] has only 2nd-order filtering and limited rejection. The order and rejection of N-path BPFs can be increased by cascading [5], but this renders a “round” passband shape. The 4th-order 4-path BPF in [6] has a “flat” passband shape and high rejection but a high NF. This work solves the noise issue of [6] while achieving the same out-of-band linearity and adding 25dB of voltage gain to relax the noise requirement of the subsequent stages

A Differential 4-Path Highly Linear Widely Tunable On-Chip Band-Pass Filter

A passive switched capacitor RF band-pass filter with clock controlled center frequency is realized in 65nm CMOS. An off-chip transformer which acts as a balun, improves filter-Q and realizes impedance matching. The differential architecture reduces clock-leakage and suppresses selectivity around even harmonics of the clock. The filter has a constant -3dB bandwidth of 35MHz and can be tuned from 100MHz up to 1GHz. IIP3 is better than 19dBm, P1dB=2dBm and NF<;5.5dB at Pdiss=2mW to 16mW.\u

Cancellation of OpAmp virtual ground imperfections by a negative conductance applied to improve RF receiver linearity

High linearity CMOS radio receivers often exploit linear V-I conversion at RF, followed by passive down-mixing and an OpAmp-based Transimpedance Amplifier at baseband. Due to nonlinearity and finite gain in the OpAmp, virtual ground is imperfect, inducing distortion currents. This paper proposes a negative conductance concept to cancel such distortion currents. Through a simple intuitive analysis, the basic operation of the technique is explained. By mathematical analysis the optimum negative conductance value is derived and related to feedback theory. In- and out-of-band linearity, stability and Noise Figure are also analyzed. The technique is applied to linearize an RF receiver, and a prototype is implemented in 65 nm technology. Measurement results show an increase of in-band IIP3 from 9dBm to >20dBm, and IIP2 from 51 to 61dBm, at the cost of increasing the noise figure from 6 to 7.5dB and <10% power penalty. In 1MHz bandwidth, a Spurious-Free Dynamic Range of 85dB is achieved at <27mA up to 2GHz for 1.2V supply voltage

Tunable n-path notch filters for blocker suppression: modeling and verification

N-path switched-RC circuits can realize filters with very high linearity and compression point while they are tunable by a clock frequency. In this paper, both differential and single-ended N-path notch filters are modeled and analyzed. Closed-form equations provide design equations for the main filtering characteristics and nonidealities such as: harmonic mixing, switch resistance, mismatch and phase imbalance, clock rise and fall times, noise, and insertion loss. Both an eight-path single-ended and differential notch filter are implemented in 65-nm CMOS technology. The notch center frequency, which is determined by the switching frequency, is tunable from 0.1 to 1.2 GHz. In a 50- environment, the N-path filters provide power matching in the passband with an insertion loss of 1.4–2.8 dB. The rejection at the notch frequency is 21–24 dB,P1 db> + 2 dBm, and IIP3 > + 17 dBm

Receiver Front-Ends in CMOS with Ultra-Low Power Consumption

Historically, research on radio communication has focused on improving range and data rate. In the last decade, however, there has been an increasing demand for low power and low cost radios that can provide connectivity with small devices around us. They should be able to offer basic connectivity with a power consumption low enough to function extended periods of time on a single battery charge, or even energy scavenged from the surroundings. This work is focused on the design of ultra-low power receiver front-ends intended for a receiver operating in the 2.4GHz ISM band, having an active power consumption of 1mW and chip area of 1mm². Low power consumption and small size make it hard to achieve good sensitivity and tolerance to interference. This thesis starts with an introduction to the overall receiver specifications, low power radio and radio standards, front-end and LO generation architectures and building blocks, followed by the four included papers. Paper I demonstrates an inductorless front-end operating at 915MHz, including a frequency divider for quadrature LO generation. An LO generator operating at 2.4GHz is shown in Paper II, enabling a front-end operating above 2GHz. Papers III and IV contain circuits with combined front-end and LO generator operating at or above the full 2.45GHz target frequency. They use VCO and frequency divider topologies that offer efficient operation and low quadrature error. An efficient passive-mixer design with improved suppression of interference, enables an LNA-less design in Paper IV capable of operating without a SAW-filter

Switched-Capacitor RF Receivers for High Interferer Tolerance

The demand for broadband wireless communication is growing rapidly, requiring more spectrum resources. However, spectrum usage is inefficient today because different frequency bands are allocated for different communication standards and most of the bands are not highly occupied. Cognitive radio systems with dynamic spectrum access improve spectrum efficiency, but they require wideband tunable receiver hardware. In such a system, a preselect filter is required for the RF receiver front end, because an out-of-band (OB) interferer can block the front end or cause distortion, desensitizing the receiver. In a conventional solution, off-chip passive filters, such as surface-acoustic-wave (SAW) filters, are used to reject the OB interferer. However, such passive filters are hardly tunable, have large area, and are very expensive. On-chip, high-selectivity, linearly tunable RF filters are, therefore, a hot topic in RF front-end research. Switched-capacitor (SC) RF filters, such as N-path filters, feature good linearity and tunability, making them good candidates for tunable RF filters. However, N-path filters have some drawbacks: notably, a poor harmonic response and limited close-by blocker tolerance. This thesis presents the design and implementation of several interferer-tolerant receivers based on SC technology. We present an RF receiver with a harmonic-rejecting N-path filter to improve the harmonic response of the N-path bandpass filter. It features tunable narrowband filtering and high attenuation of the third- and fifth-order LO harmonics at the LNA output, which improves the blocker tolerance at LO harmonics. The 0.2-1 GHz RF receiver is implemented in a 65 nm CMOS process. The blocker 1 dB compression point (B1dB) is -2.4 dBm at a 20 MHz offset, and remains high at the third- and fifth-order LO harmonics. The LNA’s reverse isolation helps keep the LO emission below -90 dBm. A two-stage harmonic-rejection approach offers a > 51 dB harmonic-rejection ratio at the third- and fifth-order LO harmonics without calibration. To improve tolerance for close-by blockers, we further present an SC RF receiver achieving high-order, tunable, highly linear RF filtering. We implement RF input impedance matching, N-path filtering, high-order discrete-time infinite-impulse response (IIR) filtering and downconversion using only switches and capacitors in a 0.1-0.7 GHz prototype with tunable center frequency, programmable filter order, and very high tolerance for OB blockers. The 40 nm CMOS receiver consumes 38.5-76.5mA, achieves 40 dB gain, 24 dBm OB IIP3, 14.7 dBm B1dB for a 30MHz blocker offset, 6.8-9.7 dB noise figure, and > 66dB calibrated harmonic rejection ratio. The key drawback of our earlier SC receiver is the relatively high theoretical lower limit of the noise figure. To improve the noise performance, we developed a 0.1-0.6 GHz chopping SC RF receiver with an integrated blocker detector. We achieve RF impedance matching, high-order OB interferer filtering, and flicker-noise chopping with passive SC circuits only. The 34-80 mW 65 nm receiver achieves 35 dB gain, 4.6-9 dB NF, 31 dBm OB-IIP3, and 15 dBm B1dB. The 0.2 mW integrated blocker detector detects large OB blockers with only a 1 us response time. The filter order can be adapted to blocker power with the blocker detector

Flexible Receivers in CMOS for Wireless Communication

Consumers are pushing for higher data rates to support more services that are introduced in mobile applications. As an example, a few years ago video-on-demand was only accessed through landlines, but today wireless devices are frequently used to stream video. To support this, more flexible network solutions have merged in 4G, introducing new technical problems to the mobile terminal. New techniques are thus needed, and this dissertation explores five different ideas for receiver front-ends, that are cost-efficient and flexible both in performance and operating frequency. All ideas have been implemented in chips fabricated in 65 nm CMOS technology and verified by measurements. Paper I explores a voltage-mode receiver front-end where sub-threshold positive feedback transistors are introduced to increase the linearity in combination with a bootstrapped passive mixer. Paper II builds on the idea of 8-phase harmonic rejection, but simplifies it to a 6-phase solution that can reject noise and interferers at the 3rd order harmonic of the local oscillator frequency. This provides a good trade-off between the traditional quadrature mixer and the 8- phase harmonic rejection mixer. Furthermore, a very compact inductor-less low noise amplifier is introduced. Paper III investigates the use of global negative feedback in a receiver front-end, and also introduces an auxiliary path that can cancel noise from the main path. In paper IV, another global feedback based receiver front-end is designed, but with positive feedback instead of negative. By introducing global positive feedback, the resistance of the transistors in a passive mixer-first receiver front-end can be reduced to achieve a lower noise figure, while still maintaining input matching. Finally, paper V introduces a full receiver chain with a single-ended to differential LNA, current-mode downconversion mixers, and a baseband circuity that merges the functionalities of the transimpedance amplifier, channel-select filter, and analog-to-digital converter into one single power-efficient block