[[alternative]]The Research and Implementation of the Wireless Optical Communications Transceiver(I)

計畫編號：NSC93-2745-E032-002-URD研究期間：200408~200507研究經費：618,000[[sponsorship]]行政院國家科學委員

On-Chip Integrated Functional Near Infra-Red Spectroscopy (fNIRS) Photoreceiver for Portable Brain Imaging

RÉSUMÉ L'imagerie cérébrale fonctionnelle utilisant la Spectroscopie Fonctionnelle Proche-Infrarouge (SFPI) propose un outil portatif et non invasif de surveillance de l'oxygénation du sang. SFPI est une technique de haute résolution temporelle non invasive, sûr, peu intrusive en temps réel et pour l'imagerie cérébrale à long terme. Il permet de détecter des signaux hémodynamiques à la fois rapides et neuronaux ou lents. Outre les avantages importants des systèmes SFPI, ils souffrent encore de quelques inconvénients, notamment d’une faible résolution spatiale, d’un bruit de niveau modérément élevé et d’une grande sensibilité au mouvement. Afin de surmonter les limites des systèmes actuellement disponibles de SFPI non-portables, dans cette thèse, nous en avons introduit une nouvelle de faible puissance, miniaturisée sur une puce photodétecteur frontal destinée à des systèmes de SFPI portables. Elle contient du silicium photodiode à avalanche (SiAPD), un amplificateur de transimpédance (TIA), et « Quench-Reset », circuits mis en oeuvre en utilisant les technologies CMOS standards pour fonctionner dans les deux modes : linéaire et Geiger. Ainsi, elle peut être appliquée pour les deux fNIRS : en onde continue (CW- SFPI) et pour des applications de comptage de photon unique. Plusieurs SiAPDs ont été mises en oeuvre dans de nouvelles structures et formes (rectangulaires, octogonales, double APDs, imbriquées, netted, quadratiques et hexadecagonal) en utilisant différentes techniques de prévention de la dégradation de bord prématurée. Les principales caractéristiques des SiAPDs sont validées et l'impact de chaque paramètre ainsi que les simulateurs de l'appareil (TCAD, COMSOL, etc) ont été étudiés sur la base de la simulation et de mesure des résultats. Proposées SiAPDs techniques d'exposition avec un gain de grande avalanche, tension faible ventilation et une grande efficacité de détection des photons dans plus de faibles taux de comptage sombres. Trois nouveaux produits à haut gain, bande passante (GBW) et à faible bruit TIA sont introduits basés sur le concept de gain distribué, d’amplificateur logarithmique et sur le rejet automatique du bruit pour être appliqué en mode de fonctionnement linéaire. Le TIA proposé offre une faible consommation, un gain de haute transimpédance, une bande passante ajustable et un très faible bruit d'entrée et de sortie. Le nouveau circuit mixte trempe-reset (MQC) et un MQC contrôlable (CMQC) frontaux offrent une faible puissance, une haute vitesse de comptage de photons avec un commandable de temps de hold-off et temps de réinitialiser. La première intégration sur puce de SiAPDs avec TIA et Photon circuit de comptage a été démontrée et montre une amélioration de l'efficacité de la photodétection, spécialement en ce qui concerne la sensibilité, la consommation d'énergie et le rapport signal sur bruit.----------ABSTRACT Optical brain imaging using functional near infra-red spectroscopy (fNIRS) offers a direct and noninvasive tool for monitoring of blood oxygenation. fNIRS is a noninvasive, safe, minimally intrusive, and high temporal-resolution technique for real-time and long-term brain imaging. It allows detecting both fast-neuronal and slow-hemodynamic signals. Besides the significant advantages of fNIRS systems, they still suffer from few drawbacks including low spatial- resolution, moderately high-level noise and high-sensitivity to movement. In order to overcome the limitations of currently available non-portable fNIRS systems, we have introduced a new low-power, miniaturized on-chip photodetector front-end intended for portable fNIRS systems. It includes silicon avalanche photodiode (SiAPD), Transimpedance amplifier (TIA), and Quench- Reset circuitry implemented using standard CMOS technologies to operate in both linear and Geiger modes. So it can be applied for both continuous-wave fNIRS (CW-fNIRS) and also single-photon counting applications. Several SiAPDs have been implemented in novel structures and shapes (Rectangular, Octagonal, Dual, Nested, Netted, Quadratic and Hexadecagonal) using different premature edge breakdown prevention techniques. The main characteristics of the SiAPDs are validated and the impact of each parameter and the device simulators (TCAD, COMSOL, etc.) have been studied based on the simulation and measurement results. Proposed techniques exhibit SiAPDs with high avalanche-gain (up to 119), low breakdown-voltage (around 12V) and high photon-detection efficiency (up to 72% in NIR region) in additional to a low dark- count rate (down to 30Hz at 1V excess bias voltage). Three new high gain-bandwidth product (GBW) and low-noise TIAs are introduced and implemented based on distributed-gain concept, logarithmic-amplification and automatic noise-rejection and have been applied in linear-mode of operation. The implemented TIAs offer a power-consumption around 0.4 mW, transimpedance gain of 169 dBΩ, and input-output current/voltage noises in fA/pV range accompanied with ability to tune the gain, bandwidth and power-consumption in a wide range. The implemented mixed quench-reset circuit (MQC) and controllable MQC (CMQC) front-ends offer a quenchtime of 10ns, a maximum power-consumption of 0.4 mW, with a controllable hold-off and resettimes. The on-chip integration of SiAPDs with TIA and photon-counting circuitries has been demonstrated showing improvement of the photodetection-efficiency, specially regarding to the sensitivity, power-consumption and signal-to-noise ratio (SNR) characteristics

5 GHz Optical Front End in 0.35um CMOS

With the advantages of low cost, low power consumption, high reliability and potential for large scale integration, CMOS monolithically integrated active pixel chips have significant application in optical sensing systems. The optical front end presented in this thesis will have application in Optical Scanning Acoustic Microscope System (O-SAM), which involves a totally non-contact method of acquiring images of the interaction between surface acoustic waves (SAWs) and a solid material to be characterized. In this work, an ultra fast optical front-end using improved regulated cascade scheme is developed based on AMS 0.35mm CMOS technology. The receiver consists of an integrated photodiode, a transimpedance amplifier, a mixer, an IF amplifier and an output buffer. By treating the n-well in standard CMOS technology as a screening terminal to block the slow photo-generated bulk carriers and interdigitizing shallow p+ junctions as the active region, the integrated photodiode operates up to 4.9 GHz with no process modification. Its responsivity was measured to be 0.016 A/W. With multi-inductive-series peaking technique, the improved ReGulated-Cascade (RGC) transimpedance amplifier achieves an experimentally measured -3dB bandwidth of more than 6 GHz and a transimpedance gain of 51 dBW, which is the fastest reported TIA in CMOS 0.35mm technology. The 5 GHz Gilbert cell mixer produces a conversion gain of 11 dB, which greatly minimized the noise contribution from the IF stage. The noise figure and input IIP3 of the mixer were measured to be 15.7 dB and 1.5 dBm, respectively. The IF amplifier and output buffer pick up and further amplify the signal for post processing. The optical front end demonstrates a typical equivalent input noise current of 35 pA=pHz at 5 GHz, and a total transimpedance gain of 83 dB ohm whileconsuming a total current of 40 mA from 3.3 V power supply. The -3 dB bandwidth for the optical front end was measured to be 4.9 GHz. All the prototype chips, including the optical front end, and the individual circuits including the photodiode, TIA, mixer were probe-tested and all the measurements were taken with Anritsu VNA 37397D and Anritsu spectrum analyser MS2721A

5 GHz Optical Front End in 0.35um CMOS

With the advantages of low cost, low power consumption, high reliability and potential for large scale integration, CMOS monolithically integrated active pixel chips have significant application in optical sensing systems. The optical front end presented in this thesis will have application in Optical Scanning Acoustic Microscope System (O-SAM), which involves a totally non-contact method of acquiring images of the interaction between surface acoustic waves (SAWs) and a solid material to be characterized. In this work, an ultra fast optical front-end using improved regulated cascade scheme is developed based on AMS 0.35mm CMOS technology. The receiver consists of an integrated photodiode, a transimpedance amplifier, a mixer, an IF amplifier and an output buffer. By treating the n-well in standard CMOS technology as a screening terminal to block the slow photo-generated bulk carriers and interdigitizing shallow p+ junctions as the active region, the integrated photodiode operates up to 4.9 GHz with no process modification. Its responsivity was measured to be 0.016 A/W. With multi-inductive-series peaking technique, the improved ReGulated-Cascade (RGC) transimpedance amplifier achieves an experimentally measured -3dB bandwidth of more than 6 GHz and a transimpedance gain of 51 dBW, which is the fastest reported TIA in CMOS 0.35mm technology. The 5 GHz Gilbert cell mixer produces a conversion gain of 11 dB, which greatly minimized the noise contribution from the IF stage. The noise figure and input IIP3 of the mixer were measured to be 15.7 dB and 1.5 dBm, respectively. The IF amplifier and output buffer pick up and further amplify the signal for post processing. The optical front end demonstrates a typical equivalent input noise current of 35 pA=pHz at 5 GHz, and a total transimpedance gain of 83 dB ohm whileconsuming a total current of 40 mA from 3.3 V power supply. The -3 dB bandwidth for the optical front end was measured to be 4.9 GHz. All the prototype chips, including the optical front end, and the individual circuits including the photodiode, TIA, mixer were probe-tested and all the measurements were taken with Anritsu VNA 37397D and Anritsu spectrum analyser MS2721A

High performance drive circuits for integrated microLED/CMOS arrays for visible light communication (VLC)

Wireless communication is a form of communication that has been around for over hundreds of years and is the fastest growing segment of the communication industry. Today, wireless communication has become an essential part of almost everyone’s daily life, and the number of users has increased exponentially over the last decade with the introduction of the internet, mobile devices and smart phones. Radio Frequency (RF) transmission is arguably the most popular method of communication and is available worldwide. With the rapid progress in technology and the increase of number of users, the limited RF spectrum is becoming more congested which led to numerous research efforts to find an alternative that can help to alleviate the pending problem. One of the proposed solutions is Visible Light Communication (VLC), which uses visible Light Emitting Diode (LED) for data transmission. In this thesis, three integrated microLED/Complementary Metal Oxide Semiconductor (CMOS) Integrated Circuits (ICs) are presented with the main aim of increasing the data rate of transmission. The first microLED/CMOS IC presented here is the Generation V microLED/CMOS driver which represents the continuation of the earlier work in the HYPIX project, which aimed to develop a microLED/CMOS driver to optically pump an organic polymer laser. A 40x10 pixelarray of Generation V microLED/CMOS driver was thus designed, primarily for optical pumping polymer lasing purposes, but has also demonstrated the ability to perform communication transmission using an On-Off Keying (OOK) modulation scheme. The driver consumes up to 330mA current and produces approximately 12mW of optical power from a single pixel, which is about 3 times higher than its predecessor. The second microLED/CMOS IC is the microLED/CMOS Current Feedback (CCFBK) driver which was designed to facilitate Orthogonal Frequency Division Multiplexing (OFDM) modulation. OFDM is one of the modulation schemes, adopted from the RF domain, that was proposed to be implemented in VLC in order to increase the data transmission rate. To the best of the author’s knowledge, the microLED/CCFBK driver is the first CMOS driver for microLED that was designed to perform analogue modulation for VLC purposes. The driver is characterised and shows the ability to produce up to 3.5mW of optical power with a data transmission rate of up to 486Mbit/s. The microLED/CMOS Optical Feedback (COFBK) driver is the third microLED/CMOS IC presented in this thesis. The driver looks to improve on the performance of the microLED/CCFBK driver. OFDM transmission requires high linearity to ensure low Bit Error Rate (BER) transmission. However, the optical power output of an LED is not, in general, linear with the input voltage signal. The microLED/COFBK driver looks to increase the linearity of the optical power output by integrating a microLED and a photodiode in a single pixel to create a feedback loop. Once again, to the best of the author’s knowledge, the microLED/COFBK driver is the first CMOS driver for microLED which integrates both optical source and sensor in a single pixel to help linearise the optical power output for communication purposes; in this case, VLC. For a similar range of optical power, the microLED/COFBK driver shows a reduction about 5.3% in the degree of non-linearity compared to the microLED/CCFBK driver and produces lower Total Harmonic Distortion (THD). The microLED/COFBK driver showed the potential to increase the data rate by a factor of four over that of microLED/CCFBK driver. The analogue modulated microLED/CMOS ICs described here are the first-generation drivers that have demonstrated the possibilities to increase the data rate using OFDM. A number of possible design improvements have been identified which will enhance future performance and integration with the standard VLC system

Investigation of High-Speed Optoelectronic Receivers in Silicon-Germanium (SiGe)

Silicon Germanium (Si1-xGex) is considered the choice for analog/mixed-signal RF and optoelectronic systems due to its high speed, low noise and compatibility with standard CMOS processes. The goal of this thesis is to investigate photo-detection in SiGe and optical receiver circuits in the commercially available IBM 5HP SiGe BiCMOS process. The study of photodetectors based on SiGe is of interest because of its high absorption capability at wavelengths between 1.1-1.5um. In this thesis several designs of receiver circuits and front-end transimpedance amplifiers (TIA) were designed and fabricated in the IBM 5HP (0.5µm) SiGe technology exhibiting high transit (fT) and maximum oscillation frequency (fMAX). Spectre simulations for both the transimpedance amplifiers and the complete receiver circuits are conducted at the single supply voltage of 3.3V in the Cadence Analog Affirma design environment. The analog mixed signal design tools NeoCircuit/NeoCell from Neolinear Inc. and Analog Affirma from Cadence Inc. are used for the optimization of the complete receiver circuits consisting of a transimpedance amplifier, a cascaded multi-stage differential amplifier and a decision circuit

Design and implementation of miniaturised capsule for autofluorescence detection with possible application to the bowel disease

Early signs of intestinal cancer may be detected through variations in tissue autofluorescence (AF), however current endoscope-based AF systems are unable to inspect the small intestine. This thesis describes the design, fabrication, implantation, testing and packaging of a wireless pill capable of detecting the autofluorescence from cancerous cells, and able to reach parts of the gastrointestinal tract that are inaccessible to endoscopes. The pill exploits the fact that there is a significant difference in the intensity of autofluorescence emitted by normal and cancerous tissues when excited by a blue or ultra violet light source. The intensity differences are detected using very sensitive light detectors. The pill has been developed in two stages. The first stage starts with using an off-chip multi-pixel photon counter (MPPC) device as a light detector. In the second stage, the light detector is integrated into an application specific integrated circuit (ASIC). The pill comprises of an ASIC, optical filters, an information processing unit and a radio transmission unit, to transmit acquired data to an external base station. Two ASICs have been fabricated, the first stage of this work involved implementing an ASIC that contains two main blocks; the first block is capable of providing a variable DC voltage more than 72 V from a 3 V input to bias the MPPC device. The second main block is a front-end consisting of a high speed transimpedance amplifier (TIA) and voltage amplifiers to capture the very small current pulses produced by the MPPC. The second ASIC contains a high voltage charge pump up to (37.9 V) integrated with a single photon avalanche detector (SPAD). The charge pump is used to bias the SPAD above its breakdown voltage and therefore operate the device in Geiger mode. The SPAD was designed to operate in the visible region where its photon detection efficiency (PDE) peaks at 465 nm, which is near to human tissues autofluorescence peaking region (520±10 nm). The use of the ultra low light detector to detect the autofluorescence permits a lower excitation light intensity and therefore lower overall power consumption. The two ASICs were fabricated using a commercial triple-well high-voltage CMOS process. The complete device operates at 3V and draws an average of 7.1mA, enabling up to 23 hours of continuous operation from two 165mAh SR44 batteries

Gated multi-cycle integration (GMCI) for focal plane array (FPA) applications

In this thesis, the model and the theory of gated multi-cycle integration (GMCI) were first developed specifically for focal plane array dealing with repetitive or modulated image. The operational modes of GMCI include gated integration (GI), phase sensitive integration (PSI), multi-point summation, multi-point subtraction, multi-sample averaging and some of their combinations. Thus, the analytic theory of GMCI somehow unifies the theories of gated integration, phase sensitive detection, multiple summation and average. PSI works with background and/or dark current subtraction. As a result, the storage well of a pixel is mainly used for signal integration even if there exists a strong background. Thus, the signal-to-noise ratio, the dynamic range, the sensitivity of the detection and the noise equivalent temperature are greatly improved. For a storage well of 106 electrons, the sensitivity of the FPA operated at PSI mode could be improved by 3 orders. In addition, the transmission windows of PSI peak at odd harmonics of the modulation frequency, and therefore, the detector\u27s IN and other low frequency noise can be attenuated. A switched capacitor integrator was designed and fabricated with HP-0.5gm CMOS processing to demonstrate the feasibility of GMCI. The primary experimental results showed that the minimum detectable signal could be 5 orders less than the background, which is impossible for the conventional readout methods employed by current staring FPAs. The fixed patterns associated with switching charge injection, feedthrough, offset voltage of operational amplifier were addressed and suppressed by taking the differentia of two sampled voltages that correspond to signal integrations with 180° phase difference while keeping the same fixed pattern. GMCI, operated at PSI with multiple averages, is expected to become a powerful method in dealing with repetitive weak image swamped by strong background