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Imaging Schottky Barriers and Ohmic Contacts in PbS Quantum Dot Devices
Abstract
We fabricated planar PbS quantum dot devices with ohmic and Schottky type electrodes and characterized them using scanning photocurrent and photovoltage microscopies. The microscopy techniques used in this investigation allow for interrogation of the lateral depletion width and related photovoltaic properties in the planar Schottky type contacts. Titanium/QD contacts exhibited depletion widths that varied over a wide range as a function of bias voltage, while the gold/QD contacts showed ohmic behavior over the same voltage range- Text
- Journal contribution
- Biophysics
- Medicine
- Biotechnology
- Space Science
- Biological Sciences not elsewhere classified
- Chemical Sciences not elsewhere classified
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- PbS Quantum Dot DevicesWe
- microscopy techniques
- photovoltaic properties
- Ohmic Contacts
- imaging Schottky Barriers
- photovoltage microscopies
- scanning photocurrent
- voltage range
- bias voltage
- PbS quantum dot devices
- depletion width
- Schottky type contacts
- depletion widths
- Schottky type electrodes
Similar works
This paper was published in FigShare.
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