Nonstoichiometric Low-Temperature Grown GaAs Nanowires
- Publication date
- 2015
- Publisher
Abstract
The structural and electronic properties
of nonstoichiometric low-temperature
grown GaAs nanowire shells have been investigated with scanning tunneling
microscopy and spectroscopy, pump–probe reflectivity, and cathodoluminescence
measurements. The growth of nonstoichiometric GaAs shells is achieved
through the formation of As antisite defects, and to a lower extent,
after annealing, As precipitates. Because of the high density of atomic
steps on the nanowire sidewalls, the Fermi level is pinned midgap,
causing the ionization of the subsurface antisites and the formation
of depleted regions around the As precipitates. Controlling their
incorporation offers a way to obtain unique electronic and optical
properties that depart from the ones found in conventional GaAs nanowires