Design, processing, and testing of LSI arrays for space station

Data for the beam-leaded silicon-on-sapphire (SOS) process using the TA5388 dual-complementary pair plus inverted circuit show the stability of the dc device characteristics through the complete beam-lead processing and packaging steps. A more complex circuit, the TA6567 - a silicon-gate, voltage-sense BL/CMOS/SOS 256-bit RAM, has also been made that was functionally perfect at wafer probe. Efforts to increase the yield of this circuit and to obtain electrically perfect packaged units are discussed

Design, processing, and testing of LSI arrays for space station

The development of a beam-leaded low power, high performance metal-oxide-semiconductor (MOS), 256-bit random access memory (RAM) was reported. Previous success with the aluminum-gate current-sense version and a silicon-gate voltage-sense version led to the present effort to make a beam-leaded silicon-gate RAM. Some problems unique to the silicon-on-sapphire beam-lead process development are presented. Beam-leaded SOS TA5388 devices using a Si3N4 passivation layer were shown to have good electrical parameters

The challenging scales of the bird: Shuttle tile structural integrity

The principal design issues, tests, and analyses required to solve the tile integrity problem on the space shuttle orbiters are addressed. Proof testing of installed tiles is discussed along with an airflow test of special tiles. Orbiter windshield tiles are considered in terms of changes necessary to ensure acceptable margins of safety for flight

Parental Functioning in Families for Behavioral Parent Training and Importance of Clinically Meaningful Change

Objective/Method: Statistically significant and clinically meaningful effects of behavioral parent training on parental functioning were examined for 20 children with ADHD and their parents who had successfully completed a psychosocial treatment for ADHD. Results/Conclusion: Findings suggest that behavioral parent training resulted in statistically significant improvements in some domains of parenting behavior for both mothers and fathers and in reductions in most domains of parenting stress for mothers. Importantly, clinically meaningful change also was noted for these parental functioning areas, as well as for other domains of parental functioning that did not result in statistically significant findings. Clinical implications are discussed

Electron spin relaxation in n-type InAs quantum wires

We investigate the electron spin relaxation of $n$-type InAs quantum wires by numerically solving the fully microscopic kinetic spin Bloch equations with the relevant scattering explicitly included. We find that the quantum-wire size and the growth direction influence the spin relaxation time by modulating the spin-orbit coupling. Due to inter-subband scattering in connection with the spin-orbit interaction, spin-relaxation in quantum wires can show different characteristics from those in bulk or quantum wells and can be effectively manipulated by various means.Comment: 8 pages, 6 figure