Active GaAs MMIC filters in K-band, around 22 GHz, have been designed, realised and characterised. Simulation and measurement results are compared and agree. The best performances measured for a band-pass filter centered at 21.98 GHz are a bandwidth of 0.75 GHz and a noise figure of 1.95 dB

Descamps, P.

Vindevoghel, J.

English

AMS Acta

Narrowband active GaAs MMIC filters in K-band
J. Vindevoghel*, P. Descamps**
* Institut d’Electronique et de Microélectronique du Nord (IEMN) – UMR CNRS 8520
Université des Sciences et Technologies de Lille
Avenue Poincaré
BP 69
F – 59652 Villeneuve d’Ascq Cedex
Ph : +33 (0)3 20 19 79 32
Fax : +33 (0)3 20 19 78 95
E-mail : jean.vindevoghel@iemn.univ-lille1.fr
** Now with : ISMRA – ENSI Caen
6, Boulevard Maréchal Juin, 14050 Caen Cedex, France
Ph : +33 (0)2 31 45 27 95
Fax : +33 (0)2 31 45 27 89
E-mail : descamps@ismra.fr
Abstract - Active GaAs MMIC filters in K-band,
around 22 GHz, have been designed, realised and
characterised. Simulation and measurement results
are compared and agree. The best performances
measured for a band-pass filter centered at 21.98
GHz are a bandwidth of 0.75 GHz and a noise
figure of 1.95 dB.
I. INTRODUCTION
In Europe, a lot of applications such as digital high
definition television and integrated services of digital
broadcasting operate in the frequency-band 21.4 to 22
GHz [1] ; so, it appears of interest to develop low cost
and low noise filters in this frequency-band ; these
filters are to be used as first stage in home receivers.
In order to build high-selectivity filters, GaAs MMIC
active inductors have been first conceived in this band
[2] ; these inductors exhibit high Q values (about 2500)
in a narrow band of frequencies.The design of the
inductors is simple and we have got low losses, low
noise figures, low power consumptions. Moreover, it is
possible to widely tune the inductors.
In this paper, we present and compare simulated
and experimental results about MMIC active filters
using this technology ; large-signal behaviour and
temperature dependence of these components are
presented.
II. SIMULATION AND DESIGN OF THE FILTERS
The active inductors and the active filters use
HEMTs (process ED02AH from PML foundry [3]) ;
we have chosen normally off transistors which have a
low consumption, a high transconductance gm and a
low noise figure at 22 GHz.
The gate of the transistors has 6 fingers which are 30
µm wide. The optimum biasing voltages of the
normally off transistors are Vgs = 0.65 V and Vds =  3
V.
The main specifications asked to the band-pass
filter that we report about are a central frequency of  22
GHz, a bandwidth of 60 MHz, a rejection of –30 dB
outside the bandwidth, a noise factor lower than 5 dB.
Moreover, it must be input and output matched, must
be linear and unconditionally stable. This can be done
using active inductors [2] which can be electrically
tuned. This technology allows to electrically adjust the
quality factor Q in order to obtain a very narrow
resonating frequency-band and to tune the central
frequency.
The circuit diagram of a band-pass filter is
presented in figure 1.
Fig.1 : circuit diagram of a band-pass filter
It can be seen that the band-pass filter works  with a
MMIC capacitor Cp paralleled with an active inductor ;
in the case of a band-stop filter, a MMIC capacitor
would be seried with the active inductor.
In order to balance the losses of the active filter, an
amplifier is added : it is also made with a normally-off
transistor. The whole circuit (filter and amplifier) is
input and output matched to a 50 Ω load.
A S-parameter analysis of the circuit has been
made between 1 and 30 GHz [5], to make
sure of the unconditionally stability of the
filter. The theoretical results are shown in
figure 2 for the S-parameters and in figure 3
for the K-factor.
1
Frequency (GHz)
3015
-30
S2
2
(d
B
)
-15
F=22 GHz
S22 = -30 dB
0
1
Frequency (GHz)
3015
-30
0
-15
S1
1
(d
B)
F=22 GHz
S11 = -24 dB
Frequency
(GHz)
3015
-30
0
S1
2
(d
B
)
-15
F=22 GHz
S12 = -18 dB
1
F= 22 GHz
S21 = 5 dB
1 3015 Frequency (GHz)
Fig.2 : Simulated Sij(f)
Fig.3 : K(f)
It can be noted that values, obtained at 22
GHz, are  S11 = -24 dB, S22 = -30 dB, S12 = -
18 dB, S21 = 5 dB. The K factor is always
higher than 2.
Moreover, a simulation about the noise figure  in
the bandwidth of the filter gives NF = 3.5 dB.
At last, a non-linear analysis was made and
we obtain the 1 dB compression point for Pout
= 9.5 dBm and Pin = 6 dBm.
III. RESULTS
The band-pass active filter (figure 4) has been built
in GaAs MMIC technology at PML foundry, within the
context of a multi-user project. The dimensions of the
integrated circuit are 2000 * 1500 µm.
Fig.4 : photograph of the 22 GHz GaAs
MMIC active filter
To be characterised, the filter is mounted in a K-cell [4]
as shown in figure 5.
Fig.5 : photograph of the filter in the K-cell
As formerly said, in order to be sure that the circuits
are unconditionally stable, the measurements have been
made from 1 GHz up to 25 GHz. The measurements
have also been made vs the temperature (temperature
controlled from –50°C to +50°C) and vs the biasing
voltage Vds.
In figures 6 to 8 we present the experimental results
about the S-parameters S11, S22 and S21 vs the
frequency, up to 25 GHz , at room temperature and for
a biasing Vds = 2 V and Vgs = 0.65.
1 6 0
0
1 0
5
2 0
Frequency (GHz)
K
f
a
c
t
o
r
Fig.6 : S11 (f) – Experimental
Fig.7 : S22 (f) – Experimental
Fig.8 : S21 (f) – Experimental
In figure 9 we compare the simulated and measured
values of the transmission coefficient S21 vs the
frequency ; we also compare the simulated transmission
coefficient of the active filter to the one obtained using
a passive inductor.
Fig.9 : MMIC active band-pass filter : S21 simulated
(full line)and measured (points)
Comparison with a passive band-pass filter (dotted
line)
These curves clearly show that using an active filter
instead of a passive one is of a great interest : the
frequency band of the active filter is widely more
selective than for the passive one : the 3 dB bandwidth
is 6.4 GHz when looking at the simulated passive filter
and only 0.75 GHz for the active filter. The resonant
frequency is 21.98 GHz. Moreover, the measured
values of S21 agree very well with the simulated values
of the active filter (the two curves superimpose fairly
good). We also measured insertion losses of 0 dB at the
resonant frequency of 21.98 GHz ; the return losses are
-15 dB at 21.98 GHz. As for the noise figure, its better
value is 1.95 dB at 21.98 GHz, and its variation vs
frequency are shown in figure 10.
0
2
4
6
8
10
12
14
15 16 17 18 19 20 21 22 23 24 25
Frequency (GHz)
N
oi
se
 F
ig
ur
e 
(d
B
)
Fig.10 : noise figure of the MMIC active band-pass
filter vs frequency
We note that it is also possible to tune the resonant
frequency using a voltage adjustment of Vds : when
varying Vds from 3.2 to 3.5 Volts, it is possible to shift
the central resonant frequency from 21.87 GHz to
22.18 GHz. As an example we have adjusted the
central frequency at 22 GHz : then we measured
insertion losses of –0.5 dB, but it is possible to reduce
them at 0 dB, varying Vgs.
As last results, the –1 dB compression point is 12
dBm and the variations of the noise figure vs the
F= 21 GHz
S21 = 5 dB
)UHTXHQF\ *+]
6

G%
0 2510
-30
0
-15
F=21 GHz
S11 = -27 dB
15 205
)UHTXHQF\ *+]
6

G%
0
Fréquence
2515
-30
S2
2(
d
B)
-15
F=21 GHz
S22 = -13
0
20105
temperature between –50°C to +50°C are less than
0.15 dB around the initial value of 1.95 dB at 25°C.
IV. CONCLUSION
Tunable, high quality GaAs integrated active filters
in K-band are demonstrated ; 0.2 µm GaAs P-HEMT
from PML foundry have been used. The best
performances measured for a band-pass filter centered
at 21.98 GHz are a bandwidth of 0.75 GHz and a noise
figure of 1.95 dB. The dc power consumption is 40
mW and  rejection up to –60 dB is obtained.
V. ACKNOWLEDGMENTS
The authors would like to acknowledge Dr J-F.
Paillotin from CMP organisation for his technical
support, and D. Vandermoere and E. Delos for
technical assistance during the microwave
measurements.
VI. REFERENCES
[1] M.R. Stiglitz, C. Blanchard, Frequency allocations
accommodate new commercial applications.
Microwave Journal, July 1992, pp 28-34
[2] E. Vanabelle,  Filtres actifs et amplificateur faible
bruit monolithiques à 22 GHz en technologie P-
HEMT destinés à la télévision haute définition.
Thèse d’Université, Lille, 19/07/1999
[3] Philips Microwave Limeil, GaAs Foundry and
ASIC Design Centre,  ED02AH Design Manual –V
1.1-, Document number PML –G-SC-0009-E/V1.1
[4] G. Dambrine, Caractérisation des transistors à effet
de champ : mesure précise de la matrice de
répartition et détermination directe du schéma
équivalent. Thèse d’Etat, Lille, 1989
[5] HP –EESOF,  Microwave Design System – 6.0 


Narrowband active GaAs MMIC filters in K-band

Narrowband active GaAs MMIC filters in K-bandJ. Vindevoghel*, P. Descamps*** Institut d’Electronique et de Microélectronique du Nord (IEMN) – UMR CNRS 8520Université des Sciences et Technologies de LilleAvenue PoincaréBP 69F – 59652 Villeneuve d’Ascq CedexPh : +33 (0)3 20 19 79 32Fax : +33 (0)3 20 19 78 95E-mail : jean.vindevoghel@iemn.univ-lille1.fr** Now with : ISMRA – ENSI Caen6, Boulevard Maréchal Juin, 14050 Caen Cedex, FrancePh : +33 (0)2 31 45 27 95Fax : +33 (0)2 31 45 27 89E-mail : descamps@ismra.frAbstract - Active GaAs MMIC filters in K-band,around 22 GHz, have been designed, realised andcharacterised. Simulation and measurement resultsare compared and agree. The best performancesmeasured for a band-pass filter centered at 21.98GHz are a bandwidth of 0.75 GHz and a noisefigure of 1.95 dB.I. INTRODUCTIONIn Europe, a lot of applications such as digital highdefinition television and integrated services of digitalbroadcasting operate in the frequency-band 21.4 to 22GHz [1] ; so, it appears of interest to develop low costand low noise filters in this frequency-band ; thesefilters are to be used as first stage in home receivers.In order to build high-selectivity filters, GaAs MMICactive inductors have been first conceived in this band[2] ; these inductors exhibit high Q values (about 2500)in a narrow band of frequencies.The design of theinductors is simple and we have got low losses, lownoise figures, low power consumptions. Moreover, it ispossible to widely tune the inductors.In this paper, we present and compare simulatedand experimental results about MMIC active filtersusing this technology ; large-signal behaviour andtemperature dependence of these components arepresented.II. SIMULATION AND DESIGN OF THE FILTERSThe active inductors and the active filters useHEMTs (process ED02AH from PML foundry [3]) ;we have chosen normally off transistors which have alow consumption, a high transconductance gm and alow noise figure at 22 GHz.The gate of the transistors has 6 fingers which are 30µm wide. The optimum biasing voltages of thenormally off transistors are Vgs = 0.65 V and Vds =  3V.The main specifications asked to the band-passfilter that we report about are a central frequency of  22GHz, a bandwidth of 60 MHz, a rejection of –30 dBoutside the bandwidth, a noise factor lower than 5 dB.Moreover, it must be input and output matched, mustbe linear and unconditionally stable. This can be doneusing active inductors [2] which can be electricallytuned. This technology allows to electrically adjust thequality factor Q in order to obtain a very narrowresonating frequency-band and to tune the centralfrequency.The circuit diagram of a band-pass filter ispresented in figure 1.Fig.1 : circuit diagram of a band-pass filterIt can be seen that the band-pass filter works  with aMMIC capacitor Cp paralleled with an active inductor ;in the case of a band-stop filter, a MMIC capacitorwould be seried with the active inductor.In order to balance the losses of the active filter, anamplifier is added : it is also made with a normally-offtransistor. The whole circuit (filter and amplifier) isinput and output matched to a 50 Ω load.A S-parameter analysis of the circuit has beenmade between 1 and 30 GHz [5], to makesure of the unconditionally stability of thefilter. The theoretical results are shown infigure 2 for the S-parameters and in figure 3for the K-factor.1Frequency (GHz)3015-30S22(dB)-15F=22 GHzS22 = -30 dB01Frequency (GHz)3015-300-15S11(dB)F=22 GHzS11 = -24 dBFrequency(GHz)3015-300S12(dB)-15F=22 GHzS12 = -18 dB1F= 22 GHzS21 = 5 dB1 3015 Frequency (GHz)Fig.2 : Simulated Sij(f)Fig.3 : K(f)It can be noted that values, obtained at 22GHz, are  S11 = -24 dB, S22 = -30 dB, S12 = -18 dB, S21 = 5 dB. The K factor is alwayshigher than 2.Moreover, a simulation about the noise figure  inthe bandwidth of the filter gives NF = 3.5 dB.At last, a non-linear analysis was made andwe obtain the 1 dB compression point for Pout= 9.5 dBm and Pin = 6 dBm.III. RESULTSThe band-pass active filter (figure 4) has been builtin GaAs MMIC technology at PML foundry, within thecontext of a multi-user project. The dimensions of theintegrated circuit are 2000 * 1500 µm.Fig.4 : photograph of the 22 GHz GaAsMMIC active filterTo be characterised, the filter is mounted in a K-cell [4]as shown in figure 5.Fig.5 : photograph of the filter in the K-cellAs formerly said, in order to be sure that the circuitsare unconditionally stable, the measurements have beenmade from 1 GHz up to 25 GHz. The measurementshave also been made vs the temperature (temperaturecontrolled from –50°C to +50°C) and vs the biasingvoltage Vds.In figures 6 to 8 we present the experimental resultsabout the S-parameters S11, S22 and S21 vs thefrequency, up to 25 GHz , at room temperature and fora biasing Vds = 2 V and Vgs = 0.65.1 6 001 052 0Frequency (GHz)KfactorFig.6 : S11 (f) – ExperimentalFig.7 : S22 (f) – ExperimentalFig.8 : S21 (f) – ExperimentalIn figure 9 we compare the simulated and measuredvalues of the transmission coefficient S21 vs thefrequency ; we also compare the simulated transmissioncoefficient of the active filter to the one obtained usinga passive inductor.Fig.9 : MMIC active band-pass filter : S21 simulated(full line)and measured (points)Comparison with a passive band-pass filter (dottedline)These curves clearly show that using an active filterinstead of a passive one is of a great interest : thefrequency band of the active filter is widely moreselective than for the passive one : the 3 dB bandwidthis 6.4 GHz when looking at the simulated passive filterand only 0.75 GHz for the active filter. The resonantfrequency is 21.98 GHz. Moreover, the measuredvalues of S21 agree very well with the simulated valuesof the active filter (the two curves superimpose fairlygood). We also measured insertion losses of 0 dB at theresonant frequency of 21.98 GHz ; the return losses are-15 dB at 21.98 GHz. As for the noise figure, its bettervalue is 1.95 dB at 21.98 GHz, and its variation vsfrequency are shown in figure 10.0246810121415 16 17 18 19 20 21 22 23 24 25Frequency (GHz)Noise Figure (dB)Fig.10 : noise figure of the MMIC active band-passfilter vs frequencyWe note that it is also possible to tune the resonantfrequency using a voltage adjustment of Vds : whenvarying Vds from 3.2 to 3.5 Volts, it is possible to shiftthe central resonant frequency from 21.87 GHz to22.18 GHz. As an example we have adjusted thecentral frequency at 22 GHz : then we measuredinsertion losses of –0.5 dB, but it is possible to reducethem at 0 dB, varying Vgs.As last results, the –1 dB compression point is 12dBm and the variations of the noise figure vs theF= 21 GHzS21 = 5 dB)UHTXHQF\ *+]6G%0 2510-300-15F=21 GHzS11 = -27 dB15 205)UHTXHQF\ *+]6G%0Fréquence2515-30S22(dB)-15F=21 GHzS22 = -13020105temperature between –50°C to +50°C are less than0.15 dB around the initial value of 1.95 dB at 25°C.IV. CONCLUSIONTunable, high quality GaAs integrated active filtersin K-band are demonstrated ; 0.2 µm GaAs P-HEMTfrom PML foundry have been used. The bestperformances measured for a band-pass filter centeredat 21.98 GHz are a bandwidth of 0.75 GHz and a noisefigure of 1.95 dB. The dc power consumption is 40mW and  rejection up to –60 dB is obtained.V. ACKNOWLEDGMENTSThe authors would like to acknowledge Dr J-F.Paillotin from CMP organisation for his technicalsupport, and D. Vandermoere and E. Delos fortechnical assistance during the microwavemeasurements.VI. REFERENCES[1] M.R. Stiglitz, C. Blanchard, Frequency allocationsaccommodate new commercial applications.Microwave Journal, July 1992, pp 28-34[2] E. Vanabelle,  Filtres actifs et amplificateur faiblebruit monolithiques à 22 GHz en technologie P-HEMT destinés à la télévision haute définition.Thèse d’Université, Lille, 19/07/1999[3] Philips Microwave Limeil, GaAs Foundry andASIC Design Centre,  ED02AH Design Manual –V1.1-, Document number PML –G-SC-0009-E/V1.1[4] G. Dambrine, Caractérisation des transistors à effetde champ : mesure précise de la matrice derépartition et détermination directe du schémaéquivalent. Thèse d’Etat, Lille, 1989[5] HP –EESOF,  Microwave Design System – 6.0 

AMS Acta - Alm@DL - Università di Bologna

Narrowband active GaAs MMIC filters in K-band
J. Vindevoghel*, P. Descamps**
* Institut d’Electronique et de Microélectronique du Nord (IEMN) – UMR CNRS 8520
Université des Sciences et Technologies de Lille
Avenue Poincaré
BP 69
F – 59652 Villeneuve d’Ascq Cedex
Ph : +33 (0)3 20 19 79 32
Fax : +33 (0)3 20 19 78 95
E-mail : jean.vindevoghel@iemn.univ-lille1.fr
** Now with : ISMRA – ENSI Caen
6, Boulevard Maréchal Juin, 14050 Caen Cedex, France
Ph : +33 (0)2 31 45 27 95
Fax : +33 (0)2 31 45 27 89
E-mail : descamps@ismra.fr
Abstract - Active GaAs MMIC filters in K-band,
around 22 GHz, have been designed, realised and
characterised. Simulation and measurement results
are compared and agree. The best performances
measured for a band-pass filter centered at 21.98
GHz are a bandwidth of 0.75 GHz and a noise
figure of 1.95 dB.
I. INTRODUCTION
In Europe, a lot of applications such as digital high
definition television and integrated services of digital
broadcasting operate in the frequency-band 21.4 to 22
GHz [1] ; so, it appears of interest to develop low cost
and low noise filters in this frequency-band ; these
filters are to be used as first stage in home receivers.
In order to build high-selectivity filters, GaAs MMIC
active inductors have been first conceived in this band
[2] ; these inductors exhibit high Q values (about 2500)
in a narrow band of frequencies.The design of the
inductors is simple and we have got low losses, low
noise figures, low power consumptions. Moreover, it is
possible to widely tune the inductors.
In this paper, we present and compare simulated
and experimental results about MMIC active filters
using this technology ; large-signal behaviour and
temperature dependence of these components are
presented.
II. SIMULATION AND DESIGN OF THE FILTERS
The active inductors and the active filters use
HEMTs (process ED02AH from PML foundry [3]) ;
we have chosen normally off transistors which have a
low consumption, a high transconductance gm and a
low noise figure at 22 GHz.
The gate of the transistors has 6 fingers which are 30
µm wide. The optimum biasing voltages of the
normally off transistors are Vgs = 0.65 V and Vds =  3
V.
The main specifications asked to the band-pass
filter that we report about are a central frequency of  22
GHz, a bandwidth of 60 MHz, a rejection of –30 dB
outside the bandwidth, a noise factor lower than 5 dB.
Moreover, it must be input and output matched, must
be linear and unconditionally stable. This can be done
using active inductors [2] which can be electrically
tuned. This technology allows to electrically adjust the
quality factor Q in order to obtain a very narrow
resonating frequency-band and to tune the central
frequency.
The circuit diagram of a band-pass filter is
presented in figure 1.
Fig.1 : circuit diagram of a band-pass filter
It can be seen that the band-pass filter works  with a
MMIC capacitor Cp paralleled with an active inductor ;
in the case of a band-stop filter, a MMIC capacitor
would be seried with the active inductor.
In order to balance the losses of the active filter, an
amplifier is added : it is also made with a normally-off
transistor. The whole circuit (filter and amplifier) is
input and output matched to a 50 Ω load.
A S-parameter analysis of the circuit has been
made between 1 and 30 GHz [5], to make
sure of the unconditionally stability of the
filter. The theoretical results are shown in
figure 2 for the S-parameters and in figure 3
for the K-factor.
1
Frequency (GHz)
3015
-30
S2
2(
dB
)
-15
F=22 GHz
S22 = -30 dB
0
1
Frequency (GHz)
3015
-30
0
-15
S1
1
(dB
)
F=22 GHz
S11 = -24 dB
Frequency
(GHz)
3015
-30
0
S1
2(
dB
)
-15
F=22 GHz
S12 = -18 dB
1
F= 22 GHz
S21 = 5 dB
1 3015 Frequency (GHz)
Fig.2 : Simulated Sij(f)
Fig.3 : K(f)
It can be noted that values, obtained at 22
GHz, are  S11 = -24 dB, S22 = -30 dB, S12 = -
18 dB, S21 = 5 dB. The K factor is always
higher than 2.
Moreover, a simulation about the noise figure  in
the bandwidth of the filter gives NF = 3.5 dB.
At last, a non-linear analysis was made and
we obtain the 1 dB compression point for Pout
= 9.5 dBm and Pin = 6 dBm.
III. RESULTS
The band-pass active filter (figure 4) has been built
in GaAs MMIC technology at PML foundry, within the
context of a multi-user project. The dimensions of the
integrated circuit are 2000 * 1500 µm.
Fig.4 : photograph of the 22 GHz GaAs
MMIC active filter
To be characterised, the filter is mounted in a K-cell [4]
as shown in figure 5.
Fig.5 : photograph of the filter in the K-cell
As formerly said, in order to be sure that the circuits
are unconditionally stable, the measurements have been
made from 1 GHz up to 25 GHz. The measurements
have also been made vs the temperature (temperature
controlled from –50°C to +50°C) and vs the biasing
voltage Vds.
In figures 6 to 8 we present the experimental results
about the S-parameters S11, S22 and S21 vs the
frequency, up to 25 GHz , at room temperature and for
a biasing Vds = 2 V and Vgs = 0.65.
1 6 0
0
1 0
5
2 0
Frequency (GHz)
K
f
a
c
t
o
r
Fig.6 : S11 (f) – Experimental
Fig.7 : S22 (f) – Experimental
Fig.8 : S21 (f) – Experimental
In figure 9 we compare the simulated and measured
values of the transmission coefficient S21 vs the
frequency ; we also compare the simulated transmission
coefficient of the active filter to the one obtained using
a passive inductor.
Fig.9 : MMIC active band-pass filter : S21 simulated
(full line)and measured (points)
Comparison with a passive band-pass filter (dotted
line)
These curves clearly show that using an active filter
instead of a passive one is of a great interest : the
frequency band of the active filter is widely more
selective than for the passive one : the 3 dB bandwidth
is 6.4 GHz when looking at the simulated passive filter
and only 0.75 GHz for the active filter. The resonant
frequency is 21.98 GHz. Moreover, the measured
values of S21 agree very well with the simulated values
of the active filter (the two curves superimpose fairly
good). We also measured insertion losses of 0 dB at the
resonant frequency of 21.98 GHz ; the return losses are
-15 dB at 21.98 GHz. As for the noise figure, its better
value is 1.95 dB at 21.98 GHz, and its variation vs
frequency are shown in figure 10.
0
2
4
6
8
10
12
14
15 16 17 18 19 20 21 22 23 24 25
Frequency (GHz)
N
oi
se
 F
ig
ur
e 
(d
B)
Fig.10 : noise figure of the MMIC active band-pass
filter vs frequency
We note that it is also possible to tune the resonant
frequency using a voltage adjustment of Vds : when
varying Vds from 3.2 to 3.5 Volts, it is possible to shift
the central resonant frequency from 21.87 GHz to
22.18 GHz. As an example we have adjusted the
central frequency at 22 GHz : then we measured
insertion losses of –0.5 dB, but it is possible to reduce
them at 0 dB, varying Vgs.
As last results, the –1 dB compression point is 12
dBm and the variations of the noise figure vs the
F= 21 GHz
S21 = 5 dB
)UHTXHQF\ *+]
6

G%
0 2510
-30
0
-15
F=21 GHz
S11 = -27 dB
15 205
)UHTXHQF\ *+]
6

G%
0
Fréquence
2515
-30
S2
2(
dB
)
-15
F=21 GHz
S22 = -13
0
20105
temperature between –50°C to +50°C are less than
0.15 dB around the initial value of 1.95 dB at 25°C.
IV. CONCLUSION
Tunable, high quality GaAs integrated active filters
in K-band are demonstrated ; 0.2 µm GaAs P-HEMT
from PML foundry have been used. The best
performances measured for a band-pass filter centered
at 21.98 GHz are a bandwidth of 0.75 GHz and a noise
figure of 1.95 dB. The dc power consumption is 40
mW and  rejection up to –60 dB is obtained.
V. ACKNOWLEDGMENTS
The authors would like to acknowledge Dr J-F.
Paillotin from CMP organisation for his technical
support, and D. Vandermoere and E. Delos for
technical assistance during the microwave
measurements.
VI. REFERENCES
[1] M.R. Stiglitz, C. Blanchard, Frequency allocations
accommodate new commercial applications.
Microwave Journal, July 1992, pp 28-34
[2] E. Vanabelle,  Filtres actifs et amplificateur faible
bruit monolithiques à 22 GHz en technologie P-
HEMT destinés à la télévision haute définition.
Thèse d’Université, Lille, 19/07/1999
[3] Philips Microwave Limeil, GaAs Foundry and
ASIC Design Centre,  ED02AH Design Manual –V
1.1-, Document number PML –G-SC-0009-E/V1.1
[4] G. Dambrine, Caractérisation des transistors à effet
de champ : mesure précise de la matrice de
répartition et détermination directe du schéma
équivalent. Thèse d’Etat, Lille, 1989
[5] HP –EESOF,  Microwave Design System – 6.0 


https://hal.archives-ouvertes.fr/hal-00158160

Narrowband active GaAs MMIC filters in K-band

Abstract

Similar works

Full text

Available Versions

AMS Acta

AMS Acta

AMS Acta - Alm@DL - Università di Bologna