Electroluminescence (EL) was reported from 50 nm silicon oxynitride films on p-type crystalline silicon substrates in a Au/silicon oxynitride/Si structure. The EL intensity is consisted with radiative recombination of injected carriers, and has a peak below 2.45 eV. The EL can only be seen in annealed samples with the emission similar to the photoluminescence from the same samples
