Thickness and Evaluation

This is a review essay devoted to Pekka Väyrynen’s The Lewd, the Rude and the Nasty. Väyrynen’s book, concerned with thick terms and thick concepts, argues for a pragmatic view on the evaluativeness associated with these terms and concepts. The essay raises a number of critical questions regarding what Väyrynen’s arguments for his view actually show. It deals with, for example, thick properties, the fact-value distinction, what it is for terms and concepts to be (semantically) evaluative, and whether Väyrynen’s arguments generalize to thin evaluative concepts

Liquid thickness gauge

A method and apparatus are developed to measure the thickness of a liquid on a surface independent of liquid conductivity. Two pairs of round, corrosion resistant wires are mounted in an insulating material such that the cross-sectional area of each wire is flush with and normal to the surface. The resistance between each pair of wires is measured using two ac resistance measuring circuits, in which the ratio of the outputs of the two resistance measuring circuits is indicative of the thickness of the liquid on the surface

Zero-thickness interface model with chemical degradation by acid attack

Carbon dioxide (CO2) storage in abandoned oil/gas reservoirs is considered a viable alternative to reduce greenhouse gas emissions to the atmosphere. An important element of the risk associated with long-term CO2 storage is the loss of integrity of the cement seals of the abandoned wells in the reservoir. Among others, one possible cause of loss of integrity is the degradation of the oil-well cement due to the acid attack of the carbonated brine in the reservoir. In previous studies, the authors have developed a diffusion-reaction model for simulating this degradation process. In order to study possible coupled Chemo-Mechanical (CM) mechanisms, this model will be coupled with an existing mechanical model. For this purpose, in this paper, an existing constitutive law for zero-thickness interface, based on the theory of elasto-plasticity with concepts of fracture mechanics, is modified to incorporate the effect of chemical degradation on the mechanical strength parameters. Preliminary results obtained with this new constitutive law are presented, in order to illustrate the main aspects of the proposed constitutive law, as well as a possible C-M degradation mechanism that should be considered in the long-term safety assessment of CO2 geological storage projects

Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3

We show that a number of transport properties in topological insulator (TI) Bi2Se3 exhibit striking thickness-dependences over a range of up to five orders of thickness (3 nm - 170 \mu m). Volume carrier density decreased with thickness, presumably due to diffusion-limited formation of selenium vacancies. Mobility increased linearly with thickness in the thin film regime and saturated in the thick limit. The weak anti-localization effect was dominated by a single two-dimensional channel over two decades of thickness. The sublinear thickness-dependence of the phase coherence length suggests the presence of strong coupling between the surface and bulk states.Comment: 16 pages, 4 figure

Skin thickness of the anterior, anteromedial, and anterolateral thigh: a cadaveric study for split-skin graft donor sites

Background: The depth of graft harvest and the residual dermis available for reepithelization primarily influence the healing of split-skin graft donor sites. When the thigh region is chosen, the authors hypothesize based on thickness measurements that the anterolateral region is the optimal donor site. Methods: Full-thickness skin specimens were sampled from the anteromedial, anterior, and anterolateral regions of human cadavers. Skin specimens were cut perpendicularly with a custom-made precision apparatus to avoid the overestimation of thickness measurements. The combined epidermal and dermal thicknesses (overall skin thickness) were measured using a digital calliper. The specimens were histologically stained to visualize their basement membrane, and microscopy images were captured. Since the epidermal thickness varies across the specimen, a stereological method was used to eliminate observer bias. Results: Epidermal thickness represented 2.5% to 9.9% of the overall skin thickness. There was a significant difference in epidermal thickness from one region to another (P<0.05). The anterolateral thigh region had the most consistent and highest mean epidermal thickness (60±3.2 µm). We observed that overall skin thickness increased laterally from the anteromedial region to the anterior and anterolateral regions of the thigh. The overall skin thickness measured 1,032±435 µm in the anteromedial region compared to 1,220±257 µm in the anterolateral region. Conclusions: Based on skin thickness measurements, the anterolateral thigh had the thickest epidermal and dermal layers. We suggest that the anterolateral thigh region is the optimal donor site for split-skin graft harvests from the thigh

Allowable silicon wafer thickness versus diameter for ingot rotation ID wafering

Inner diameter (ID) wafering of ingot rotation reduce the ID saw blade diameter was investigated. The blade thickness can be reduced, resulting in minimal kerf loss. However, significant breakage of wafers occurs during the rotation wafering as the wafer thickness decreases. Fracture mechanics was used to develop an equation relating wafer thickness, diameter and fracture behavior at the point of fracture by using a model of a wafer, supported by a center column and subjected to a cantilever force. It is indicated that the minimum allowable wafer thickness does not increase appreciably with increasing wafer diameter and that fracture through the thickness rather than through the center supporting column limits the minimum allowable wafer thickness. It is suggested that the minimum allowable wafer thickness can be reduced by using a vacuum chuck on the wafer surface to enhance cleavage fracture of the center core and by using 111 ingots