289 research outputs found

    Momentum-Dependent Hybridization Gap and dispersive in-gap state of The Kondo Semiconductor SmB6

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    We report the temperature-dependent three-dimensional angle-resolved photoemission spectra of the Kondo semiconductor SmB6_6. We found a difference in the temperature dependence of the peaks at the X and Γ\Gamma points, due to hybridization between the Sm 5d conduction band and the nearly localized Sm 4f state. The peak intensity at the X point has the same temperature dependence as the valence transition below 120 K, while that at the Γ\Gamma point is consistent with the magnetic excitation at Q=(0.5,0.5,0.5) below 30 K. This suggests that the hybridization with the valence transition mainly occurs at the X point, and the initial state of the magnetic excitation is located at the Γ\Gamma point.Comment: 5 pages, 3 figure

    Pentaquarks: Theory overview, and some more about quark models

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    After reviewing the basics, topics in this talk include an attempted survey of theoretical contributions to this workshop, some extra specific comments on quark models, and a summary.Comment: Invited talk at Pentaquark04, hosted by SPring-8, Harima Science Garden City, Japan, July 200

    Quantum Nature of Light Measured With a Single Detector

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    We realized the most fundamental quantum optical experiment to prove the non-classical character of light: Only a single quantum emitter and a single superconducting nanowire detector were used. A particular appeal of our experiment is its elegance and simplicity. Yet its results unambiguously enforce a quantum theory for light. Previous experiments relied on more complex setups, such as the Hanbury-Brown-Twiss configuration, where a beam splitter directs light to two photodetectors, giving the false impression that the beam splitter is required. Our work results in a major simplification of the widely used photon-correlation techniques with applications ranging from quantum information processing to single-molecule detection.Comment: 7 page

    Transport in gapped bilayer graphene: the role of potential fluctuations

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    We employ a dual-gated geometry to control the band gap \Delta in bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220 to 1.5 K. Above 5 K, RNP(T) is dominated by two thermally activated processes in different temperature regimes and exhibits exp(T3/T)^{1/3} below 5 K. We develop a simple model to account for the experimental observations, which highlights the crucial role of localized states produced by potential fluctuations. The high temperature conduction is attributed to thermal activation to the mobility edge. The activation energy approaches \Delta /2 at large band gap. At intermediate and low temperatures, the dominant conduction mechanisms are nearest neighbor hopping and variable-range hopping through localized states. Our systematic study provides a coherent understanding of transport in gapped bilayer graphene.Comment: to appear in Physical Review B: Rapid Com

    Coherent control of macroscopic quantum states in a single-Cooper-pair box

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    A small superconducting electrode (a single-Cooper-pair box) connected to a reservoir via a Josephson junction constitutes an artificial two-level system, in which two charge states that differ by 2e are coupled by tunneling of Cooper pairs. Despite its macroscopic nature involving a large number of electrons, the two-level system shows coherent superposition of the two charge states, and has been suggested as a candidate for a qubit, i.e. a basic component of a quantum computer. Here we report on time-domain observation of the coherent quantum-state evolution in the two-level system by applying a short voltage pulse that modifies the energies of the two levels nonadiabatically to control the coherent evolution. The resulting state was probed by a tunneling current through an additional probe junction. Our results demonstrate coherent operation and measurement of a quantum state of a single two-level system, i.e. a qubit, in a solid-state electronic device.Comment: 4 pages, 4 figures; to be published in Natur
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