Laser activated MTOS microwave device

A light-activated semiconductor device usable as an optoelectronic switch, pulse generator or optical detector is provided. A semiconductor device is disclosed which provides back-to-back metal-thin oxide-silicon (MTOS) capacitors. Each capacitor includes a thin, light-absorptive aluminum electrode which overlies a thin oxide layer and a lightly doped region implanted in an intrinsic silicon substrate

Controlled Synthesis and Characterization of Metal Oxide Nanowires by Chemical Vapor Deposition on Silicon and Carbon Substrates

Nanotechnology and nanomaterials have attracted considerable interest and are predicted to revolutionize many materials and technologies that we use in everyday life. In the past few years, significant research has focused on one dimensional metal oxide nanostructures due to their unique properties and potential applications in various fields from nanoelectronics to energy. However, controlled synthesis of these nanostructures is still a challenge. The objective of this thesis is to synthesize metal oxide nanowires by chemical vapour deposition directly on various substrates. The nanostructures include (i) silicon oxide nanostructures on silicon substrate, (ii) manganese oxide nanostructures on silicon substrate, and (iii) manganese oxide nanostructures on carbon paper substrate. Firstly, silicon oxide nanowires were synthesized on silicon substrate by a VO2 assisted chemical vapor deposition. Networked features of silicon oxide nanowires were found. Systematic study on the nanowire growth has indicated that morphology and composition of the final products are considerably sensitive to the catalyst components, reaction atmosphere and temperature. These results will help in better understanding the growth process of silicon oxide nanowires. Secondly, manganese oxide nanostructures were synthesized on silicon substrate by chemical vapor deposition method. It was found that MnO nanowires are high density and single crystalline with average diameter of 150 nm. These nanowires were characterized using FESEM, EDX, TEM and XRD. The synthesis process and effects of growth parameters such as temperature, heating rate and source/substrate distance on the morphology, composition and structure of the products were systematically studied. Finally, manganese oxide nanostructures were synthesized on carbon paper substrate by chemical vapor deposition method. It was revealed that manganese oxide nanowires and nanobelts can be selectively grown on carbon paper substrate by using a catalyst (gold) assisted or catalyst free thermal evaporation of manganese powder under an argon gas atmosphere. Various effects of growth parameters such as temperature, catalyst and buffered substrate on the growth product were also systematically investigated by using SEM, TEM and XPS

Controlled Synthesis and Characterization of Metal Oxide Nanowires by Chemical Vapor Deposition on Silicon and Carbon Substrates

Nanotechnology and nanomaterials have attracted considerable interest and are predicted to revolutionize many materials and technologies that we use in everyday life. In the past few years, significant research has focused on one dimensional metal oxide nanostructures due to their unique properties and potential applications in various fields from nanoelectronics to energy. However, controlled synthesis of these nanostructures is still a challenge. The objective of this thesis is to synthesize metal oxide nanowires by chemical vapour deposition directly on various substrates. The nanostructures include (i) silicon oxide nanostructures on silicon substrate, (ii) manganese oxide nanostructures on silicon substrate, and (iii) manganese oxide nanostructures on carbon paper substrate. Firstly, silicon oxide nanowires were synthesized on silicon substrate by a VO2 assisted chemical vapor deposition. Networked features of silicon oxide nanowires were found. Systematic study on the nanowire growth has indicated that morphology and composition of the final products are considerably sensitive to the catalyst components, reaction atmosphere and temperature. These results will help in better understanding the growth process of silicon oxide nanowires. Secondly, manganese oxide nanostructures were synthesized on silicon substrate by chemical vapor deposition method. It was found that MnO nanowires are high density and single crystalline with average diameter of 150 nm. These nanowires were characterized using FESEM, EDX, TEM and XRD. The synthesis process and effects of growth parameters such as temperature, heating rate and source/substrate distance on the morphology, composition and structure of the products were systematically studied. Finally, manganese oxide nanostructures were synthesized on carbon paper substrate by chemical vapor deposition method. It was revealed that manganese oxide nanowires and nanobelts can be selectively grown on carbon paper substrate by using a catalyst (gold) assisted or catalyst free thermal evaporation of manganese powder under an argon gas atmosphere. Various effects of growth parameters such as temperature, catalyst and buffered substrate on the growth product were also systematically investigated by using SEM, TEM and XPS

High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO₂deposition

We report on an in situ high resolution core level photoemission study of the early stages of interface formation between an ultrathin SiOx layer ( ∼ 0.3 nm) grown on the atomically clean Si(111) surface and a HfO2 dielectric layer. Si 2p core level spectra acquired at 130 eV photon energy reveal evidence of a chemically shifted component on the lower binding energy side of the substrate peak which is attributed to interface defect states resulting from the incorporation of silicon atoms from the substrate into the interfacial oxide at room temperature. This evidence of Si/SiOx interface disruption would be expected to increase charge carrier scattering mechanisms in the silicon and contribute to the generally observed mobility degradation in high-k stacks with ultrathin silicon oxide interface layers

Methods of repairing a substrate

A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium boride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive

Ceramic material suitable for repair of a space vehicle component in a microgravity and vacuum environment, method of making same, and method of repairing a space vehicle component

A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium diboride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive

A Study on the Effects of C060 Gamma-radiation on Steam-grown Sio2 MOS Structures

Cobalt 60 gamma radiation effects on Metal Oxide Semiconductors /MOS/ with p-type and n-type silicon substrate

Degenerate epitaxy-driven defects in monolayer silicon oxide onto ruthenium

The structure of the ultimately-thin crystalline allotrope of silicon oxide, prepared onto a ruthenium surface, is unveiled down to atomic scale with chemical sensitivity, thanks to high resolution scanning tunneling microscopy and first principle calculations. An ordered oxygen lattice is imaged which coexists with the two-dimensional monolayer oxide. This coexistence signals a displacive transformation from an oxygen reconstructed-Ru(0001) to silicon oxide, along which latterally-shifted domains form, each with equivalent and degenerate epitaxial relationships with the substrate. The unavoidable character of defects at boundaries between these domains appeals for the development of alternative methods capable of producing single-crystalline two-dimensional oxides