Analog, Digital And Short Pulse Modulation Of Ultrafast Gallium Aluminum Arsenide Semiconductor Lasers

Semiconductor lasers are potentially devices of great importance for optical transmission as well as short pulse generation for various sampling, characteration and dispersion measurements. Since semiconductor lasers are currently driven devices, it is relatively easy to modulate the optical output and to generate short pulses, on the order of 10 ps long, by directly modulating the injection current into the laser. This paper will present some recent developments in injection lasers which are capable of being analog or digitally modulated at rates up to 10 GHz, as well as generating short optical pulses at repetition rates from several hundred megahertz to tens of gigahertz

A theory of longitudinal modes in semiconductor lasers

A theory of longitudinal mode lasing spectrum of semiconductor lasers is developed which takes into account the nonuniform carrier and photon distributions and local gain spectrum shifts inside lasers with low end mirror reflectivities. The theory gives results consistent with observed longitudinal mode behavior in lasers with reduced facet reflectivity

Laser sources on a heterogeneous III-V/silicon platform

The heterogeneous integration of III-V semiconductor lasers on a silicon waveguide platform using DVS-BCB adhesive bonding is reviewed. Both mW-level lasers and ultra-compact laser sources are discussed

Suppression of beating noise of narrow-linewidth erbium-doped fiber ring lasers by use of a semiconductor optical amplifier

Beating noise in narrow-linewidth erbium-doped fiber ring lasers puts severe limitations on applications of the lasers. We demonstrate the suppression of beating noise in fiber ring lasers by using a semiconductor optical amplifier in the laser cavity, which acts as a high-pass filter. Two different ring structures are presented as examples to demonstrate this beating noise suppression

Frequency dynamics of gain-switched injection-locked semiconductor lasers

The frequency dynamics of gain-switched singlemode semiconductor lasers subject to optical injection is investigated. The requirements for low time jitter and reduced frequency chirp operation are studied as a function of the frequency mismatch between the master and slave lasers. Suppression of the power overshoot, typical during gain-switched operation, can be achieved for selected frequency detunings

Broader, flatter optical spectra of passively mode-locked semiconductor lasers for a wavelength-division multiplexing source

Using the time domain master equation for a complex electric-field pulse envelope, we find analytical results for the optical spectra of passively mode-locked semiconductor lasers. The analysis includes the effect of optical nonlinearity of semiconductor lasers, which is characterized by a slow saturable amplifier and absorber. Group velocity dispersion, bandwidth limiting, and self-phase modulation were considered as well. The FWHM of the spectrum profile was found to have a strong dependence on group velocity dispersion and self-phase modulation. For large absolute values of the chirp parameter, the optical spectra result in equispaced continuous wave frequencies, a large fraction of which have equal power

Integrated electroplated heat spreaders for high power semiconductor lasers

Thermal management of high power semiconductor lasers is challenging due to the low thermal conductivity of the laser substrate and the active device layers. In this work, we demonstrate the use of a microfabricated laser test device to study the thermal management of edge emitting semiconductor lasers. In this device, metallic heat spreaders of high thermal conductivity are directly electroplated on structures that mimic edge-emitting semiconductor lasers. The effects of various structural parameters of the heat spreader on the reduction of the thermal resistance of the laser test device are demonstrated both experimentally and theoretically. Without resolving to computational costive simulations, we developed two independent analytical models to verify the experimental data and further utilized them to identify the dominant thermal resistance under different laser mounting configurations. We believe our approach here of using microfabricated devices to mimic thermal characteristics of lasers as well as the developed analytical models for calculating the laser thermal resistance under different mounting configurations can potentially become valuable tools for thermal management of high power semiconductor lasers

High-Power Directional Emission from Microlasers with Chaotic Resonators

High-power and highly directional semiconductor cylinder-lasers based on an optical resonator with deformed cross section are reported. In the favorable directions of the far-field, a power increase of up to three orders of magnitude over the conventional circularly symmetric lasers was obtained. A "bow-tie"-shaped resonance is responsible for the improved performance of the lasers in the higher range of deformations, in contrast to "whispering-gallery"-type modes of circular and weakly deformed lasers. This resonator design, although demonstrated here in midinfrared quantum-cascade lasers, should be applicable to any laser based on semiconductors or other high-refractive index materials.Comment: Removed minor discrepancies with published version in the text and in Fig.