Linewidth broadening of a quantum dot coupled to an off-resonant cavity

We study the coupling between a photonic crystal cavity and an off-resonant quantum dot under resonant excitation of the cavity or the quantum dot. Linewidths of the quantum dot and the cavity as a function of the excitation laser power are measured. We show that the linewidth of the quantum dot, measured by observing the cavity emission, is significantly broadened compared to the theoretical estimate. This indicates additional incoherent coupling between the quantum dot and the cavity.Comment: 5 pages, 4 figure

Optical Properties and Modal Gain of InGaN Quantum Dot Stacks

We present investigations of the optical properties of stacked InGaN quantum dot layers and demonstrate their advantage over single quantum dot layer structures. Measurements were performed on structures containing a single layer with quantum dots or threefold stacked quantum dot layers, respectively. A superlinear increase of the quantum dot related photoluminescence is detected with increasing number of quantum dot layers while other relevant GaN related spectral features are much less intensive when compared to the photoluminescence of a single quantum dot layer. The quantum dot character of the active material is verified by microphotoluminescence experiments at different temperatures. For the possible integration within optical devices in the future the threshold power density was investigated as well as the modal gain by using the variable stripe length method.Comment: 9 Pages, 4 Figure

Influence of phonons on exciton-photon interaction and photon statistics of a quantum dot

In this paper, we investigate, phonon effects on the optical properties of a spherical quantum dot. For this purpose, we consider the interaction of a spherical quantum dot with classical and quantum fields while the exciton of quantum dot interacts with a solid state reservoir. We show that phonons strongly affect the Rabi oscillations and optical coherence on first picoseconds of dynamics. We consider the quantum statistics of emitted photons by quantum dot and we show that these photons are anti-bunched and obey the sub-Poissonian statistics. In addition, we examine the effects of detuning and interaction of quantum dot with the cavity mode on optical coherence of energy levels. The effects of detuning and interaction of quantum dot with cavity mode on optical coherence of energy levels are compared to the effects of its interaction with classical pulse

A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.Comment: Related papers at http://pettagroup.princeton.ed

Non-invasive detection of charge-rearrangement in a quantum dot in high magnetic fields

We demonstrate electron redistribution caused by magnetic field on a single quantum dot measured by means of a quantum point contact as non-invasive detector. Our device which is fabricated by local anodic oxidation allows to control independently the quantum point contact and all tunnelling barriers of the quantum dot. Thus we are able to measure both the change of the quantum dot charge and also changes of the electron configuration at constant number of electrons on the quantum dot. We use these features to exploit the quantum dot in a high magnetic field where transport through the quantum dot displays the effects of Landau shells and spin blockade. We confirm the internal rearrangement of electrons as function of the magnetic field for a fixed number of electrons on the quantum dot.Comment: 4 pages, 5 figure

Correlation-induced resonances and population switching in a quantum dot coulomb valley

Strong correlation effects on electron transport through a spinless quantum dot are considered. When two single-particle levels in the quantum dot are degenerate, a conserved pseudospin degree of freedom appears for general tunneling matrix elements between the quantum dot and leads. Local fluctuations of the pseudospin in the quantum dot give rise to a pair of asymmetric conductance peaks near the center of a Coulomb valley. An exact relation to the population switching is provided.Comment: Fig. 4 and some technical details removed. To appear in PR

Near-threshold properties of the electronic density of layered quantum-dots

We present a way to manipulate an electron trapped in a layered quantum dot based on near-threshold properties of one-body potentials. We show that potentials with a simple global parameter allows the manipulation of the wave function changing its spatial extent. This phenomenon seems to be fairly general and could be implemented using current quantum-dot quantum wells technologies and materials if a proper layered quantum dot is designed. The layered quantum dot under consideration is similar to a quantum-dot quantum well device, i.e. consists of a spherical core surrounded by successive layers of different materials. The number of layers and the constituent material are chosen to highlight the near-threshold properties. In particular we show that the near-threshold phenomena can be observed using an effective mass approximation model that describes the layered quantum dot which is consistent with actual experimental parameters.Comment: 15 pages, 6 figures, regular articl