Evidence for the formation of a Mott state in potassium-intercalated pentacene

We investigate electronic transport through pentacene thin-films intercalated with potassium. From temperature-dependent conductivity measurements we find that potassium-intercalated pentacene shows metallic behavior in a broad range of potassium concentrations. Surprisingly, the conductivity exhibits a re-entrance into an insulating state when the potassium concentration is increased past one atom per molecule. We analyze our observations theoretically by means of electronic structure calculations, and we conclude that the phenomenon originates from a Mott metal-insulator transition, driven by electron-electron interactions.Comment: 8 pages, 6 figure

Interface Characteristics at an Organic/Metal Junction: Pentacene on Cu Stepped Surfaces

The adsorption of pentacene on Cu(221), Cu(511) and Cu(911) is investigated using density functional theory (DFT) with the self-consistent inclusion of van der Waals (vdW) interactions. Cu(211) is a vicinal of Cu(111) while Cu(511) and (911) are vicinals of Cu(100). For all the three surfaces, we found pentacene to prefer to adsorb parallel to the surface and near the steps. The addition of vdW interactions resulted in an enhancement in adsorption energies, with reference to the PBE functional, of around 2 eV. With vdWs inclusion, the adsorption energies were found to be 2.98 eV, 3.20 eV and 3.49 eV for Cu(211), Cu(511) and Cu(911) respectively. These values reflect that pentacene adsorbs stronger on (100) terraces with a preference for larger terraces. The molecule tilts upon adsorption with a small tilt angle on the (100) vicinals (about a few degrees) as compared to a large one on Cu(221) where the tilt angle is found to be about 20o. We find that the adsorption results in a net charge transfer to the molecule of ~1 electron, for all surfaces.Comment: 11 pages, 4 figure

Synthesis and characterization of copper, polyimide and TIPS-pentacene layers for the development of a solution processed fibrous transistor

A study was performed for the development of a flexible organic field effect transistor starting from a polyester fibre as substrate material. Focus of subsequent layer deposition was on low temperature soluble processes to allow upscaling. Gate layer consists out of a pyrrole polymerization and copper coating step. Polyimide dielectric layer was deposited using dipcoating. Gold electrodes were vacuum evaporated and patterned via mask fibre shadowing. The active layer consisted of a soluble p-type TIPS-pentacene organic semiconductor. Different deposition techniques have been examined. Considerable progress in development of a transistor has been made

Electric field induced charge injection or exhaustion in organic thin film transistor

The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as a shift of the threshold thickness at which electric current began to flow. The {\it in-situ} and continuous measurement can also determine qualitatively the accumulation layer thickness together with the distribution function of injected carriers. The accumulation layer thickness is a few mono layers, and it does not depend on gate voltages, rather depends on the chemical species.Comment: 4 figures, to be published in Phys. Rev.

Thermopower measurements on pentacene transistors

We present the first thermoelectric measurements on pentacene field effect transistors. We report high values of the Seebeck coefficient at room temperature between 240 and 500 micro V/K depending on the dielectric surface treatment. These values are independent of the thickness of the channel and of the applied gate voltage. Two contributions to the Seebeck coefficient are clearly identified: the expected contribution that is dependent on the position of the transport level and reflects the activated character of carrier generation, and an unexpected intrinsic contribution of 265 plus minus 40 micro V/K that is independent of the temperature and the treatment of the oxide surface. This value corresponds to an unusually large lattice vibrational entropy of 3 kB per carrier. We demonstrate that this intrinsic vibrational entropy arises from lattice hardening induced by the presence of the charge-carrier. Our results provide direct evidence of the importance of electronic polarization effects on charge transport in organic molecular semiconductors.Comment: 7 pages, 8 figures, LaTe

Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator

Abstract—Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (κ = 11) dielectric constant but also has good dielectric strength. Moreover, the root-mean-square surface roughness and surface energy (γs) on the surface of the HfOx layer were 1.304 nm and 34.24 mJ/cm2, respectively. The smooth, as well as hydrophobic, surface of HfOx could facilitate the direct deposition of the pentacene film without an additional polymer treatment layer, leading to a high field-effect mobility of 3.8 cm2/(V · s). Index Terms—Hafnium oxide, high permittivity, organic thinfilm transistor (OTFT), solution process, surface energy