Graphene Photonics and Optoelectronics

The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential to be in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultra-wide-band tunability. The rise of graphene in photonics and optoelectronics is shown by several recent results, ranging from solar cells and light emitting devices, to touch screens, photodetectors and ultrafast lasers. Here we review the state of the art in this emerging field.Comment: Review Nature Photonics, in pres

Heteroepitaxial growth of ZnO branches selectively on TiO2 nanorod tips with improved light harvesting performance

A seeded heteroepitaxial growth of ZnO nanorods selectively on TiO2 nanorod tips was achieved by restricting crystal growth on highly hydrophobic TiO2 nanorod film surfaces. Intriguing light harvesting performance and efficient charge transport efficiency has been found, which suggest potential applications in photovoltaics and optoelectronics

Quantum-optical influences in optoelectronics - an introduction

This focused review discusses the increasing importance of quantum optics in the physics and engineering of optoelectronic components. Two influences relating to cavity quantum electrodynamics are presented. One involves the development of low threshold lasers, when the channeling of spontaneous emission into the lasing mode becomes so efficient that the concept of lasing needs revisiting. The second involves the quieting of photon statistics to produce single-photon sources for applications such as quantum information processing. An experimental platform, consisting of quantum-dot gain media inside micro- and nanocavities, is used to illustrate these influences of the quantum mechanical aspect of radiation. An overview is also given on cavity quantum electrodynamics models that may be applied to analyze experiments or design devices.EC/FP7/615613/EU/External Quantum Control of Photonic Semiconductor Nanostructures/EXQUISIT

Valley Dependent Optoelectronics from Inversion Symmetry Breaking

Inversion symmetry breaking allows contrasted circular dichroism in different k-space regions, which takes the extreme form of optical selection rules for interband transitions at high symmetry points. In materials where band-edges occur at noncentral valleys, this enables valley dependent interplay of electrons with light of different circular polarizations, in analogy to spin dependent optical activities in semiconductors. This discovery is in perfect harmony with the previous finding of valley contrasted Bloch band features of orbital magnetic moment and Berry curvatures from inversion symmetry breaking [Phys. Rev. Lett. 99, 236809 (2007)]. A universal connection is revealed between the k-resolved optical oscillator strength of interband transitions, the orbital magnetic moment and the Berry curvatures, which also provides a principle for optical measurement of orbital magnetization and intrinsic anomalous Hall conductivity in ferromagnetic systems. The general physics is demonstrated in graphene where inversion symmetry breaking leads to valley contrasted optical selection rule for interband transitions. We discuss graphene based valley optoelectronics applications where light polarization information can be interconverted with electronic information.Comment: Expanded version, to appear in Phys. Rev.

3D photonic crystals for direct applications in light emitting devices

In this paper, we present IP-Dip polymer-based Photonic Crystals (PhCs), which are more and more attractive for photonic devices. These structures offer simple and cheap solutions, how to improve optical properties of these devices. In our experiment, we used Direct Laser Writing (DLW) lithography to create a three dimensional (3D) PhCs. We fabricated two types of PhC structure. The first structure was prepared from IP-Dip polymer and used for modification of the radiation pattern of the optical fiber. The second PhC structure was filled with liquid polymer PolyDiMethylSiloxane (PDMS) and directly placed on the LED chip. Quality of the prepared structures was confirmed by a confocal microscope. The modification of the far-field radiation patterns of LED and optical fiber was measured by a goniophotometer