Modeling with structure of resins in electonic compornents

In recent years, interfacial fracture becomes one of the most important problems in the assessment of reliability of electronics packaging. Especially, underfill resin is used with solder joints in flip chip packaging for preventing the thermal fatigue fracture in solder joints. In general, the interfacial strength has been evaluated on the basis of interfacial fracture mechanics concept. However, as the size of devices decrease, it is difficult to evaluate the interfacial strength quantitatively. Most of researches in the interfacial fracture were conducted on the basis of the assumption of the perfectly bonding condition though the interface has the micro-scale structure and the bonding is often imperfect. In this study, the mechanical model of the interfacial structure of resin in electronic components was proposed. Bimaterial model with the imperfect bonding condition was examined by using a finite element analysis (FEA). Stress field in the vicinity of interface depends on the interfacial structure with the imperfect bonding. In the front of interfacial crack tip, the behavior of process zone is affected by interfacial structure. However, the instability of fracture for macroscopic crack which means the fracture toughness is governed by the stress intensity factor based on the fracture mechanics concept.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Three-body Hydrogen Bond Defects Contribute Significantly to the Dielectric Properties of the Liquid Water-Vapor Interface

In this Letter, we present a simple model of aqueous interfacial molecular structure and we use this model to isolate the effects of hydrogen bonding on the dielectric properties of the liquid water-vapor interface. By comparing this model to the results of atomistic simulation we show that the anisotropic distribution of molecular orientations at the interface can be understood by considering the behavior of a single water molecule interacting with the average interfacial density field via an empirical hydrogen bonding potential. We illustrate that the depth dependence of this orientational anisotropy is determined by the geometric constraints of hydrogen bonding and we show that the primary features of simulated orientational distributions can be reproduced by assuming an idealized, perfectly tetrahedral hydrogen bonding geometry. We also demonstrate that non-ideal hydrogen bond geometries are required to produce interfacial variations in the average orientational polarization and polarizability. We find that these interfacial properties contain significant contributions from a specific type of geometrically distorted three-body hydrogen bond defect that is preferentially stabilized at the interface. Our findings thus reveal that the dielectric properties of the liquid water-vapor interface are determined by collective molecular interactions that are unique to the interfacial environment.Comment: 5 pages, 4 figure, S

Interfacial chemical bonding-mediated ionic resistive switching.

In this paper, we present a unique resistive switching (RS) mechanism study of Pt/TiO2/Pt cell, one of the most widely studied RS system, by focusing on the role of interfacial bonding at the active TiO2-Pt interface, as opposed to a physico-chemical change within the RS film. This study was enabled by the use of a non-conventional scanning probe-based setup. The nanoscale cell is formed by bringing a Pt/TiO2-coated atomic force microscope tip into contact with a flat substrate coated with Pt. The study reveals that electrical resistance and interfacial bonding status are highly coupled together. An oxygen-mediated chemical bonding at the active interface between TiO2 and Pt is a necessary condition for a non-polar low-resistance state, and a reset switching process disconnects the chemical bonding. Bipolar switching mode did not involve the chemical bonding. The nature of chemical bonding at the TiO2-metal interface is further studied by density functional theory calculations

Correlation of interfacial bonding mechanism and equilibrium conductance of molecular junctions

We report theoretical investigations on the role of interfacial bonding mechanism and its resulting structures to quantum transport in molecular wires. Two bonding mechanisms for the Au-S bond in an Au(111)/1,4-benzenedithiol(BDT)/Au(111) junction were identified by ab initio calculation, confirmed by a recent experiment, which, we showed, critically control charge conduction. It was found, for Au/ BDT/Au junctions, the hydrogen atom, bound by a dative bond to the Sulfur, is energetically non-dissociative after the interface formation. The calculated conductance and junction breakdown forces of H-non-dissociative Au/BDT/Au devices are consistent with the experimental values, while the H-dissociated devices, with the interface governed by typical covalent bonding, give conductance more than an order of magnitude larger. By examining the scattering states that traverse the junctions, we have revealed that mechanical and electric properties of a junction have strong correlation with the bonding configuration. This work clearly demonstrates that the interfacial details, rather than previously believed many-body effects, is of vital importance for correctly predicting equilibrium conductance of molecular junctions; and manifests that the interfacial contact must be carefully understood for investigating quantum transport properties of molecular nanoelectronics.Comment: 18 pages, 6 figures, 2 tables, to be appeared in Frontiers of Physics 9(6), 780 (2014

Interfacial microstructure and shear strength of Ti-6Al-4V/TiAl laminate composite sheet fabricated by hot packed rolling

A two layer Ti-6Al-4V(wt%)/Ti-43Al-9V-Y(at%) laminate composite sheet with a uniform interfacial microstructure and no discernible defects at the interfaces has been prepared by hot-pack rolling, and its interfacial microstructure and shear strength were characterized. Characterization of the interfacial microstructure shows that there was an interfacial region of uniform thickness of about 250 μm which consisted of two layers: Layer I on the TiAl side which was 80 μm thick and Layer II on the Ti-6Al-4V side which was 170 μm thick. The microstructure of Layer I consisted of massive γ phases, needlelike γ phases and B2 phase matrix, while the microstructure of Layer II consisted of α₂ phase. The microstructure of the interfacial region is the result of the interdiffusion of Ti element from Ti-6Al-4V alloy layer into the TiAl alloy layer and Al element from the TiAl alloy layer into the Ti-6Al-4V alloy layer. The shear strength measurement demonstrated that the bonding strength between the TiAl alloy and Ti-6Al-4V alloy layers in the laminate composite sheet was very high. This means that the quality of the interfacial bonding between the two layers achieved by the multi-path rolling is high, and the interface between the layers is very effective in transferring loading, causing significantly improved toughness and plasticity of the TiAl/Ti-6Al-4V laminate composite sheet

Metal-dielectric interactions

Metal direlectric surface interactions and dielectric films on metal substrates were investigated. Since interfacial interaction depends so heavily on the nature of the surfaces, analytical surface tools such as Auger emission spectroscopy, X-ray photoelectron spectroscopy and field ion microscopy were used to assist in surface and interfacial characterization. The results indicate that with metals contacting certain glasses in the clean state interfacial, bonding produces fractures in the glasses while when a film such as water is present, fractures occur in the metal near the interface. Friction forces were used to measure the interfacial bond strengths. Studies with metals contacting polymers using field ion microscopy revealed that strong bonding forces could develop being between a metal and polymer surface with polymer transferring to the metal surface in various ways depending upon the forces applied to the surface in contact. With the deposition of refractory carbides, silicides and borides onto metal and alloy substrates the presence of oxides at the interface or active gases in the deposition plasma were shown to alter interfacial properties and chemistry. Auger ion depth profile analysis indicated the chemical composition at the interface and this could be related to the mechanical, friction, and wear behavior of the coating

GaAs interfacial self-cleaning by atomic layer deposition

The reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 are studied using in situ monochromatic x-ray photoelectron spectroscopy. Using the combination of in situ deposition and analysis techniques, the interfacial "self-cleaning" is shown to be oxidation state dependent as well as metal organic precursor dependent. Thermodynamics, charge balance, and oxygen coordination drive the removal of certain species of surface oxides while allowing others to remain. These factors suggest proper selection of surface treatments and ALD precursors can result in selective interfacial bonding arrangements