Fractal capacitors

A linear capacitor structure using fractal geometries is described. This capacitor exploits both lateral and vertical electric fields to increase the capacitance per unit area. Compared to standard parallel-plate capacitors, the parasitic bottom-plate capacitance is reduced. Unlike conventional metal-to-metal capacitors, the capacitance density increases with technology scaling. A classic fractal structure is implemented with 0.6-μm metal spacing, and a factor of 2.3 increase in the capacitance per unit area is observed. It is shown that capacitance boost factors in excess of ten may be possible as technology continues to scale. A computer-aided-design tool to automatically generate and analyze custom fractal layouts has been developed

Microwave field effect transistor

Electrodes of a high power, microwave field effect transistor are substantially matched to external input and output networks. The field effect transistor includes a metal ground plane layer, a dielectric layer on the ground plane layer, a gallium arsenide active region on the dielectric layer, and substantially coplanar spaced source, gate, and drain electrodes having active segments covering the active region. The active segment of the gate electrode is located between edges of the active segments of the source and drain electrodes. The gate and drain electrodes include inactive pads remote from the active segments. The pads are connected directly to the input and output networks. The source electrode is connected to the ground plane layer. The space between the electrodes and the geometry of the electrodes extablish parasitic shunt capacitances and series inductances that provide substantial matches between the input network and the gate electrode and between the output network and the drain electrode. Many of the devices are connected in parallel and share a common active region, so that each pair of adjacent devices shares the same source electrodes and each pair of adjacent devices shares the same drain electrodes. The gate electrodes for the parallel devices are formed by a continuous stripe that extends between adjacent devices and is connected at different points to the common gate pad

A new lab-on-chip transmitter for the detection of proteins using RNA aptamers

A new RNA aptamer based affinity biosensor for CReactive Protein (CRP), a risk marker for cardiovascular disease was developed using interdigitated capacitor (IDC), integrated in Voltage Controlled Oscillator (VCO) and output signal is amplified using Single Stage Power Amplifier (PA) for transmitting signal to receiver at Industrial, Scientific and Medical (ISM) band. The Lab-on-Chip transmitter design includes IDC, VCO and PA. The design was implemented in IHP 0.25μm SiGe BiCMOS process; post-CMOS process was utilized to increase the sensitivity of biosensor. The CRP was incubated between or on interdigitated electrodes and the changes in capacitance of IDC occurred. In blank measurements, the oscillation frequency was 2.464GHz whereas after RNA aptamers were immobilized on open aluminum areas of IDC and followed by binding reaction processed with 500pg/ml CRP solution, the capacitance shifted to 2.428GHz. Phase noise is changed from -114.3dBc/Hz to -116.5dBc/Hz

Theoretical and experimental determination of cell constants of planar-interdigitated electrolyte conductivity sensors

In this paper, an analytical expression is presented for the cell constant of planar-interdigitated electrodes used as electrolyte conductivity sensors. The result of this expression is compared with results of measurement carried out with several differently shaped planar probes provided with a thin Ta2O5 insulating film, showing good agreement. More than 10 different devices have been fabricated with predicted cell constants ranging from 0.14 to 4.44 cm¿1. The measured cell constants are typically 10¿20% smaller, possibly due to fringing effects

Integrated capacitors for conductive lithographic film circuits

This paper reports on fabrication of low-value embedded capacitors in conductive lithographic film (CLF) circuit boards. The CLF process is a low-cost and high speed manufacturing technique for flexible circuits and systems. We report on the construction and electrical characteristics of CLF capacitor structures printed onto flexible substrates. These components comprise a single polyester dielectric layer, which separates the printed electrode films. Multilayer circuit boards with printed components and interconnect can be fabricated using this technique

Graded ferroelectric capacitors with robust temperature characteristics

Ferroelectric thin films offer the possibility of engineering the dielectric response for tunable components in frequency-agile rf and microwave devices. However, this approach often leads to an undesired temperature sensitivity. Compositionally graded ferroelectric films have been explored as a means of redressing this sensitivity, but experimental observations vary depending on geometry and other details. In this paper, we present a continuum model to calculate the capacitive response of graded ferroelectric films with realistic electrode geometries by accurately accounting for the polarization distribution and long-range electrostatic interactions. We show that graded c-axis poled BaxSr_(1−xT)iO_3 BST parallel plate capacitors are ineffective while graded a-axis poled BST coplanar capacitors with interdigitated electrodes are extremely effective in obtaining high and temperature-stable dielectric properties

A novel interdigitated capacitor based biosensor for detection of cardiovascular risk marker

C-reactive protein (CRP) is a potential biomarker whose elevated levels in humans determine cardiovascular disease risk and inflammation. In this study, we have developed a novel capacitive biosensor for detection of CRP-antigen using capacitor with interdigitated gold (GID) electrodes on nanocrystalline diamond (NCD) surface. The NCD surface served as a dielectric layer between the gold electrodes. GID-surface was functionalized by antibodies and the immobilization was confirmed by Fourier transform spectroscopy (FT-IR) and contact angle measurements. The CRP-antigen detection was performed by capacitive/dielectric-constant measurements. The relaxation time and polarizability constants were estimated using Cole-Cole model. Our results showed that the relaxation time constant (tau) of only CRP-antibody was within 10(-16)-10(-13) s, which was increased to 10(-11) s after the incubation with CRP-antigen, suggesting that the CRP-antigen was captured by the antibodies on GID-surface. In addition, polarizability constant(m) of CRP was also increased upon incubation with increasing concentration of CRP-antigen. Our results showed that the response of GID-NCD-based capacitive biosensor for CRP-antigen was dependent on both concentration (25-800 ng/ml) as well as frequency (50-350 MHz). Furthermore, using optimized conditions, the GID-NCD based capacitive biosensor developed in this study can potentially be used for detection of elevated levels of protein risk markers in suspected subjects for early diagnosis of disease

Design considerations for a monolithic, GaAs, dual-mode, QPSK/QASK, high-throughput rate transceiver

A monolithic, GaAs, dual mode, quadrature amplitude shift keying and quadrature phase shift keying transceiver with one and two billion bits per second data rate is being considered to achieve a low power, small and ultra high speed communication system for satellite as well as terrestrial purposes. Recent GaAs integrated circuit achievements are surveyed and their constituent device types are evaluated. Design considerations, on an elemental level, of the entire modem are further included for monolithic realization with practical fabrication techniques. Numerous device types, with practical monolithic compatability, are used in the design of functional blocks with sufficient performances for realization of the transceiver