Efficient coupling of inhomogeneous current spreading and dynamic electro-optical models for broad-area edge-emitting semiconductor devices

We extend a 2 (space) + 1 (time)-dimensional traveling wave model for broad-area edge-emitting semiconductor lasers by a model for inhomogeneous current spreading from the contact to the active zone of the laser. To speedup the performance of the device simulations, we suggest and discuss several approximations of the inhomogeneous current density in the active zone

Efficient coupling of electro-optical and heat-transport models for broad-area semiconductor lasers

In this work, we discuss the modeling of edge-emitting high-power broad-area semiconductor lasers. We demonstrate an efficient iterative coupling of a slow heat transport (HT) model defined on multiple vertical-lateral laser cross-sections with a fast dynamic electro-optical (EO) model determined on the longitudinal-lateral domain that is a projection of the device to the active region of the laser. Whereas the HT-solver calculates temperature and thermally-induced refractive index changes, the EO-solver exploits these distributions and provides time-averaged field intensities, quasi-Fermi potentials, and carrier densities. All these time-averaged distributions are used repetitively by the HT-solver for the generation of the heat sources entering the HT problem solved in the next iteration step

Time-dependent simulation of thermal lensing in high-power broad-area semiconductor lasers

We propose a physically realistic and yet numerically applicable thermal model to account for short and long term self-heating within broad-area lasers. Although the temperature increase is small under pulsed operation, a waveguide that is formed within a few-ns-long pulse can result in a transition from a gain-guided to an index-guided structure, leading to near and far field narrowing. Under continuous wave operation the longitudinally varying temperature profile is obtained self-consistently. The resulting unfavorable narrowing of the near field can be successfully counteracted by etching trenches

Chirped photonic crystal for spatially filtered optical feedback to a broad-area laser

We derive and analyze an efficient model for reinjection of spatially filtered optical feedback from an external resonator to a broad area, edge emitting semiconductor laser diode. Spatial filtering is achieved by a chirped photonic crystal, with variable periodicity along the optical axis and negligible resonant backscattering. The optimal chirp is obtained from a genetic algorithm, which yields solutions that are robust against perturbations. Extensive numerical simulations of the composite system with our optoelectronic solver indicate that spatially filtered reinjection enhances lower-order transversal optical modes in the laser diode and, consequently, improves the spatial beam quality

Chirped photonic crystal for spatially filtered optical feedback to a broad-area laser

We derive and analyze an efficient model for reinjection of spatially filtered optical feedback from an external resonator to a broad area, edge emitting semiconductor laser diode. Spatial filtering is achieved by a chirped photonic crystal, with variable periodicity along the optical axis and negligible resonant backscattering. The optimal chirp is obtained from a genetic algorithm, which yields solutions that are robust against perturbations. Extensive numerical simulations of the composite system with our optoelectronic solver indicate that spatially filtered reinjection enhances lower-order transversal optical modes in the laser diode and, consequently, improves the spatial beam quality

Modeling of current spreading in high-power broad-area lasers and its impact on the lateral far field divergence

The effect of current spreading on the lateral far-field divergence of high-power broad-area lasers is investigated with a time-dependent model using different descriptions for the injection of carriers into the active region. Most simulation tools simply assume a spatially constant injection current density below the contact stripe and a vanishing current density beside. Within the drift-diffusion approach, however, the injected current density is obtained from the gradient of the quasi-Fermi potential of the holes, which solves a Laplace equation in the p-doped region if recombination is neglected. We compare an approximate solution of the Laplace equation with the exact solution and show that for the exact solution the highest far-field divergence is obtained. We conclude that an advanced modeling of the profiles of the injection current densities is necessary for a correct description of far-field blooming in broad-area lasers

Traveling wave analysis of non-thermal far-field blooming in high-power broad-area lasers

With rising current the lateral far-field angle of high-power broad-area lasers widens (far-field blooming) which can be partly attributed to non-thermal effects due to carrier induced refractive index and gain changes that become the dominant mechanism under pulsed operation. To analyze the non-thermal contribution to far-field blooming we use a traveling wave based model that properly describes the injection of the current into and the diffusion of the carriers within the active region. Although no pre-assumptions regarding the modal composition of the field is made and filamentation is automatically accounted for, the highly dynamic time-dependent optical field distribution can be very well represented by only few modes of the corresponding stationary waveguide equation obtained by a temporal average of the carrier density and field intensity. The reduction of current spreading and spatial holeburning by selecting proper design parameters can substantially improve the beam quality of the laser

Dynamics in high-power diode lasers

High-power broad-area diode lasers (BALs) exhibit chaotic spatio-temporal dynamics above threshold. Under high power operation, where they emit tens of watts output, large amounts of heat are generated, with significant impact on the laser operation. We incorporate heating effects into a dynamical electro-optical (EO) model for the optical field and carrier dynamics along the quantum-well active zone of the laser. Thereby we effectively couple the EO and heat-transport (HT) solvers. Thermal lensing is included by a thermally-induced contribution to the index profile. The heat sources obtained with the dynamic EO-solver exhibit strong variations on short time scales, which however have only a marginal impact on the temperature distribution. We consider two limits: First, the static HT-problem, with time-averaged heat sources, which is solved iteratively together with the EO solver. Second, under short pulse operation the thermally induced index distribution can be obtained by neglecting heat flow. Although the temperature increase is small, a waveguide is introduced here within a few-ns-long pulse resulting in significant near field narrowing. We further show that a beam propagating in a waveguide structure utilized for BA lasers does not undergo filamentation due to spatial holeburning. Moreover, our results indicate that in BALs a clear optical mode structure is visible which is neither destroyed by the dynamics nor by longitudinal effects

Nonpolar GaN-Based VCSELs with Lattice-Matched Nanoporous Distributed Bragg Reflector Mirrors

Wide-bandgap optoelectronic devices have undergone significant advancements with the advent of commercial light-emitting diodes and edge-emitting lasers in the violet-blue spectral region. They are now ubiquitous in several lighting, communication, data storage, display, and sensing applications. Among the III-nitride emitters, vertical-cavity surface-emitting lasers (VCSELs) have attracted significant attention in recent years due to their inherent advantages over edge-emitting lasers. The small active volume enables single-mode operation with low threshold currents and high modulation bandwidths. Their surface-normal device geometry is conducive to the cost-effective formation of high-density 2D arrays while simplifying on-chip wafer testing. Furthermore, the low beam divergence and circular beam profiles in VCSELs allow efficient fiber coupling. Nevertheless, GaN-based VCSELs are still in the early stages of development. Several challenges need to be addressed before high-performance devices can be commercially realized. One such challenge is the lack of high-quality distributed Bragg reflector (DBR) mirrors. Conventionally, epitaxial and dielectric DBRs are used which often involve complex growth and fabrication techniques. This dissertation provides an alternative approach where subwavelength air-voids (nanopores) are introduced in alternating layers of doped/undoped GaN to form the DBR structure. Selective electrochemical etching creates nanopores in the doped layers, reducing the effective refractive index relative to the surrounding undoped GaN. Using only 16-pairs, DBR reflectance \u3e99.9% could be achieved. Several research groups have shown optically pumped VCSELs using nanoporous DBRs on c-plane. However, there are no reports of electrically injected nanoporous VCSELs. Using m-plane GaN substrates, we have demonstrated the first ever electrically injected GaN-based VCSEL using a lattice-matched nanoporous DBR. The nonpolar m-plane orientation is beneficial for leveraging the higher per-pass gain and polarization-pinning properties absent in c-plane. Lasing under pulsed operation at room temperature was observed at 409 nm with a linewidth of ~0.6 nm and a maximum output power of ~1.5 mW. This is the highest output power from m-plane VCSELs to date with relatively stable operation at elevated temperatures. All tested devices were linearly polarization-pinned in the a-direction with high polarization ratios \u3e0.9. Overall, the nanoporous DBRs help in mitigating some of the issues that limit the performance of III-nitride VCSELs