Effect of impurities in the description of surface nanobubbles: Role of nonidealities in the surface layer\ud

In a recent study [ S. Das, J. H. Snoeijer and D. Lohse Phys. Rev. E 82 056310 (2010)], we provided quantitative demonstration of the conjecture [ W. A. Ducker Langmuir 25 8907 (2009)] that the presence of impurities at the surface layer (or the air-water interface) of surface nanobubbles can substantially lower the gas-side contact angle and the Laplace pressure of the nanobubbles. Through an analytical model for any general air-water interface without nonideality effects, we showed that a large concentration of soluble impurities at the air-water interface of the nanobubbles ensures significantly small contact angles (matching well with the experimental results) and Laplace pressure (though large enough to forbid stability). In this paper this general model is extended to incorporate the effect of nonidealities at the air-water interface in impurity-induced alteration of surface nanobubble properties. Such nonideality effects arise from finite enthalpy or entropy of mixing or finite ionic interactions of the impurity molecules at the nanobubble air-water interface and ensure significant lowering of the nanobubble contact angle and Laplace pressure even at relatively small impurity coverage. In fact for impurity molecules that show enhanced tendency to get adsorbed at the nanobubble air-water interface from the bulk phase, impurity-induced lowering of the nanobubble contact angle is witnessed for extremely small bulk concentration. Surface nanobubble experiments being typically performed in an ultraclean environment, the bulk concentration of impurities is inevitably very small, and in this light the present calculations can be viewed as a satisfactory explanation of the conjecture that impurities, even in trace concentration, have significant impact on surface nanobubble

Plasma polarization in high gravity astrophysical objects

Macroscopic plasma polarization, which is created by gravitation and other mass-acting (inertial) forces in massive astrophysical objects is under discussion. Non-ideality effect due to strong Coulomb interaction of charged particles is introduced into consideration as a new source of such polarization. Simplified situation of totally equilibrium isothermal star without relativistic effects and influence of magnetic field is considered. The study is based on variational approach combined with "local density approximation". It leads to two local forms of thermodynamic equilibrium conditions: constancy for generalized (electro)chemical potentials and/or conditions of equilibrium for the forces acting on each charged specie. New "non-ideality potential" and "non-ideality force" appear naturally in this consideration. Hypothetical sequences of gravitational, inertial and non-ideality polarization on thermo- and hydrodynamics of massive astrophysical objects are under discussion.Comment: 6 pages, no figures, 35 refs, Int. Conference "Physics of Non-Ideal Plasmas" (PNP-13), Chernogolovka, September 2009, Russi

Suns-VOC_\textrm{OC} characteristics of high performance kesterite solar cells

Low open circuit voltage ($V_{OC}$) has been recognized as the number one problem in the current generation of Cu$_{2}$ZnSn(Se,S)$_{4}$ (CZTSSe) solar cells. We report high light intensity and low temperature Suns-$V_{OC}$ measurement in high performance CZTSSe devices. The Suns-$V_{OC}$ curves exhibit bending at high light intensity, which points to several prospective $V_{OC}$ limiting mechanisms that could impact the $V_{OC}$, even at 1 sun for lower performing samples. These V$_{OC}$ limiting mechanisms include low bulk conductivity (because of low hole density or low mobility), bulk or interface defects including tail states, and a non-ohmic back contact for low carrier density CZTSSe. The non-ohmic back contact problem can be detected by Suns-$V_{OC}$ measurements with different monochromatic illumination. These limiting factors may also contribute to an artificially lower $J_{SC}$-$V_{OC}$ diode ideality factor.Comment: 9 pages, 9 figures, 1 supplementary materia

On The Role Of The Interface Charge In Non-Ideal Metal-Semiconductor Contacts

The bias dependent interface charge is considered as the origin of the observed non-ideality in current-voltage and capacitance-voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal-semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal-semicoductor systems

A Dilemma for Mathematical Constructivism

In this paper I argue that constructivism in mathematics faces a dilemma. In particular, I maintain that constructivism is unable to explain (i) the application of mathematics to nature and (ii) the intersubjectivity of mathematics unless (iii) it is conjoined with two theses that reduce it to a form of mathematical Platonism. The paper is divided into five sections. In the first section of the paper, I explain the difference between mathematical constructivism and mathematical Platonism and I outline my argument. In the second, I argue that the best explanation of how mathematics applies to nature for a constructivist is a thesis I call Copernicanism. In the third, I argue that the best explanation of how mathematics can be intersubjective for a constructivist is a thesis I call Ideality. In the fourth, I argue that once constructivism is conjoined with these two theses, it collapses into a form of mathematical Platonism. In the fifth, I confront some objections

Barrier inhomogeneities of Al/p-In2Te3 thin film Schottky diodes

The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p-In2Te3/Al thin films Schottky diodes papered by Flash Evaporation technique were measured in the temperature range 303-335 K have been interpreted on the basis of the assumption of a Gaussian distribution of barrier heights (φbo) due to barrier height inhomogeneities that prevail at the interface. It has been found that the occurrence of Gaussian distribution of BHs is responsible for the decrease of the apparent BH (φbo) and increase of the ideality factor (η). The inhomogeneities are considered to have a Gaussian distribution with a mean barrier height of (φbm) and standard deviation (σs) at zero-bias. Furthermore, the activation energy value (φb) at T = 0 and Richardson constant (A**) value was obtained as 0.587 eV and 3.09 Acm– 2 K– 1 by means of usual Richardson plots. Hence, it has been concluded that the temperature dependence of the I-V characteristics of p-In2Te3/Al Schottky Diodes can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the BHs. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2790

Preparation and measurement: two independent sources of uncertainty in quantum mechanics

In the Copenhagen interpretation the Heisenberg uncertainty relation is interpreted as the mathematical expression of the concept of complementarity, quantifying the mutual disturbance necessarily taking place in a simultaneous or joint measurement of incompatible observables. This interpretation has already been criticized by Ballentine a long time ago, and has recently been challenged in an experimental way. These criticisms can be substantiated by using the generalized formalism of positive operator-valued measures, from which a new inequality can be derived, precisely illustrating the Copenhagen concept of complementarity. The different roles of preparation and measurement in creating uncertainty in quantum mechanics are discussed.Comment: latex, 18 pages, 4 eps figure