846 research outputs found
Doping nature of native defects in 1T-TiSe2
The transition metal dichalcogenide 1T-TiSe2 is a quasi two-dimensional
layered material with a charge density wave (CDW) transition temperature of
TCDW 200 K. Self-doping effects for crystals grown at different temperatures
introduce structural defects, modify the temperature dependent resistivity and
strongly perturbate the CDW phase. Here we study the structural and doping
nature of such native defects combining scanning tunneling
microscopy/spectroscopy and ab initio calculations. The dominant native single
atom dopants we identify in our single crystals are intercalated Ti atoms, Se
vacancies and Se substitutions by residual iodine and oxygen.Comment: 5 pages, 3 figure
Effect of doping-- and field--induced charge carrier density on the electron transport in nanocrystalline ZnO
Charge transport properties of thin films of sol--gel processed undoped and
Al-doped zinc oxide nanoparticles with variable doping level between 0.8 at%
and 10 at% were investigated. The X-ray diffraction studies revealed a decrease
of the average crystallite sizes in highly doped samples. We provide estimates
of the conductivity and the resulting charge carrier densities with respect to
the doping level. The increase of charge carrier density due to extrinsic
doping were compared to the accumulation of charge carriers in field effect
transistor structures. This allowed to assess the scattering effects due to
extrinsic doping on the electron mobility. The latter decreases from 4.6*10^-3
cm^2/Vs to 4.5*10^-4 cm^2/Vs with increasing doping density. In contrast, the
accumulation leads to an increasing mobility up to 1.5*10^-2 cm^2/Vs. The
potential barrier heights related to grain boundaries between the crystallites
were derived from temperature dependent mobility measurements. The extrinsic
doping initially leads to a grain boundary barrier height lowering, followed by
an increase due to doping-induced structural defects. We conclude that the
conductivity of sol--gel processed nanocrystalline ZnO:Al is governed by an
interplay of the enhanced charge carrier density and the doping-induced charge
carrier scattering effects, achieving a maximum at 0.8 at% in our case.Comment: 8 pages, 7 figure
Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene
Bilayer graphene (BLG) at the charge neutrality point (CNP) is strongly
susceptible to electronic interactions, and expected to undergo a phase
transition into a state with spontaneous broken symmetries. By systematically
investigating a large number of singly- and doubly-gated bilayer graphene (BLG)
devices, we show that an insulating state appears only in devices with high
mobility and low extrinsic doping. This insulating state has an associated
transition temperature Tc~5K and an energy gap of ~3 meV, thus strongly
suggesting a gapped broken symmetry state that is destroyed by very weak
disorder. The transition to the intrinsic broken symmetry state can be tuned by
disorder, out-of-plane electric field, or carrier density
Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene
The electronic structure of multilayer graphenes depends strongly on the
number of layers as well as the stacking order. Here we explore the electronic
transport of purely ABA-stacked trilayer graphenes in a dual-gated field-effect
device configuration. We find that both the zero-magnetic-field transport and
the quantum Hall effect at high magnetic fields are distinctly different from
the monolayer and bilayer graphenes, and that they show electron-hole
asymmetries that are strongly suggestive of a semimetallic band overlap. When
the ABA trilayers are subjected to an electric field perpendicular to the
sheet, Landau level splittings due to a lifting of the valley degeneracy are
clearly observed.Comment: 5 figure
Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3
Topological insulators represent a new state of quantum matter attractive to
both fundamental physics and technological applications such as spintronics and
quantum information processing. In a topological insulator, the bulk energy gap
is traversed by spin-momentum locked surface states forming an odd number of
surface bands that possesses unique electronic properties. However, transport
measurements have often been dominated by residual bulk carriers from crystal
defects or environmental doping which mask the topological surface
contribution. Here we demonstrate (BixSb1-x)2Te3 as a tunable topological
insulator system to manipulate bulk conductivity by varying the Bi/Sb
composition ratio. (BixSb1-x)2Te3 ternary compounds are confirmed as
topological insulators for the entire composition range by angle resolved
photoemission spectroscopy (ARPES) measurements and ab initio calculations.
Additionally, we observe a clear ambipolar gating effect similar to that
observed in graphene using nanoplates of (BixSb1-x)2Te3 in
field-effect-transistor (FET) devices. The manipulation of carrier type and
concentration in topological insulator nanostructures demonstrated in this
study paves the way for implementation of topological insulators in
nanoelectronics and spintronics.Comment: 7 pages, 4 figure
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