Dynamic capacitance of metal-oxide-semiconductor field-effect transistors

A transient peak was observed for MOSFET devices when measuring the dynamic capacitance versus applied gate voltage for various configurations at low frequencies. This peak is absent in conventional steady-state ac measurements. Since the peak is also absent in high grade devices and at high frequencies a possible explanation in terms of surface state traps is discussed for the observed phenomena --Abstract, page ii

Uncertainty-principle noise in vacuum-tunneling transducers

The fundamental sources of noise in a vacuum-tunneling probe used as an electromechanical transducer to monitor the location of a test mass are examined using a first-quantization formalism. We show that a tunneling transducer enforces the Heisenberg uncertainty principle for the position and momentum of a test mass monitored by the transducer through the presence of two sources of noise: the shot noise of the tunneling current and the momentum fluctuations transferred by the tunneling electrons to the test mass. We analyze a number of cases including symmetric and asymmetric rectangular potential barriers and a barrier in which there is a constant electric field. Practical configurations for reaching the quantum limit in measurements of the position of macroscopic bodies with such a class of transducers are studied

Vibrating-membrane electrometer has high conversion gain

Vibrating-membrane transducer in a circuit can measure current below 10 to-the-minus 17 ampere. This electrometer has a high conversion gain and a minimum internal power consumption

Dynamics of Josephson junctions and single-flux-quantum networks with superconductor-insulator-normal metal junction shunts

Within the framework of the microscopic model of tunneling, we modelled the behavior of the Josephson junction shunted by the Superconductor-Insulator-Normal metal (SIN) tunnel junction. We found that the electromagnetic impedance of the SIN junction yields both the frequency-dependent damping and dynamic reactance which leads to an increase in the effective capacitance of the circuit. We calculated the dc I-V curves and transient characteristics of these circuits and explained their quantitative differences to the curves obtained within the resistively shunted junction model. The correct operation of the basic single-flux-quanta circuits with such SIN-shunted junctions, i.e. the Josephson transmission line and the toggle flip-flop, have also been modelled.Comment: 8 pages incl. 7 figure