Self-assembled InAs quantum wire lasers on (001)InP at 1.6 µm

3 páginas, 4 figuras.In this work, the authors present results on the growth by atomic layer molecular beam epitaxy and characterization of lasers with one and three stacked layers of InAs quantum wires (QWRs) as active zone and aluminum-free waveguides on (001) InP substrates. The separated confinement heterostructure consists of n-p InP claddings and a waveguide formed by short period superlattices of (InP)5/(GaInAs)4 lattice matched to the InP substrate. The optimum growth conditions (substrate temperature and As and P pressures) have been determined to obtain waveguides with a flat surface in order to get a uniform QWR distribution. Lasing emission is observed at a wavelength of ~1.66 µm up to 270 K from 15×3000 µm2 devices, with a threshold current density at that temperature of 2 kA/cm2.This work was financed by Spanish project Nos. MEC TEC-2005-05781-C03-01 and CAM S 0505ESP 0200, by the SANDIE Network of excellence (Contract No. NMP4-CT-2004-500101), and by the European Commission Growth program NANOMAT project, Contract No. G5RD-CT-2001-00545.Peer reviewe