Surface reconstructions of InGaAs alloys

The surface reconstructions of InxGa1-xAs alloys grown by molecular beam epitaxy on the (0 0 1) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3× reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the InxGa1-xAs surface alloy from a c(4 × 4) to an asymmetric 3× reconstruction and that are fully consistent with all current experimental evidence. © 2005 Elsevier B.V. All rights reserved.Peer Reviewe

Surface reconstructions of InGaAs alloys

The surface reconstructions of InxGa1-xAs alloys grown by molecular beam epitaxy on the (001) surfaces of GaAs and InAs have been studied by reflection high-energy electron diffraction and scanning tunnelling microscopy. A surface phase diagram is presented for the nominally strain-free alloy as a function of substrate temperature and alloy composition, and structural models for the commonly observed 3x reconstructions are discussed. Two new, electronically stable structural models are described that account for the transition of the InxGa1-xAs surface alloy from a c(4 x 4) to an asymmetric 3x reconstruction and that are fully consistent with all current experimental evidence. (c) 2005 Elsevier B.V. All rights reserved