Temperature dependent single photon emission in InP/GaInP quantum dots

Intensity correlation measurements on single InP/GaInP quantum dots (QDs) show antibunching at zero delay time, indicative of single photon emission. The antibunching time tau(R) increases or decreases with temperature depending on the QD size as a result of the competition between: (1) thermal excitation of holes dominant in smaller QDs and (2) dark-to-bright exciton transition dominant in larger QDs. The antibunching minimum g((2))(0) remains below 0.2 up to 45 K. (C) 2010 Elsevier B.V. All rights reserved.This work has been supported by research contracts of the Spanish Ministry of Education Grants MAT2008-01555/NAN, Consolider CSD 2006-19, the Community of MadridCAMS-0505-ESP-0200 and the Spanish Ministry of Science and InnovationNanoinpho-QD TEC2008-06756-C03-01.Peer Reviewe