Composition Modulation in Low Temperature Growth of InGaAs/GaAs System: Influence on Plastic Relaxation

4 páginas, 2 figuras.This work focuses on the characteristics of composition modulation in InGaAs=GaAslayers grown by ALMBE at 200º C, and its influence on the degree of plastic relaxation that these layers achieve. The asymmetry in the composition modulation for both h110i directions lying in the (001) growth plane observed by Transmission Electron Microscopy is proposed to explain the asymmetry enhancement in misfit dislocations density, as has been found in these structures. Internal stresses in the material associated with this phase separation could be responsible for the hardening of these low temperature grown InGaAs layers.The present work was supported by the CICYT project MAT2000-1625, and the Andalusian government (PAI TEP- 0120).Peer reviewe