The Accuracy of Survival Time Prediction for Patients with Glioma Is Improved by Measuring Mitotic Spindle Checkpoint Gene Expression

Identification of gene expression changes that improve prediction of survival time across all glioma grades would be clinically useful. Four Affymetrix GeneChip datasets from the literature, containing data from 771 glioma samples representing all WHO grades and eight normal brain samples, were used in an ANOVA model to screen for transcript changes that correlated with grade. Observations were confirmed and extended using qPCR assays on RNA derived from 38 additional glioma samples and eight normal samples for which survival data were available. RNA levels of eight major mitotic spindle assembly checkpoint (SAC) genes (BUB1, BUB1B, BUB3, CENPE, MAD1L1, MAD2L1, CDC20, TTK) significantly correlated with glioma grade and six also significantly correlated with survival time. In particular, the level of BUB1B expression was highly correlated with survival time (p<0.0001), and significantly outperformed all other measured parameters, including two standards; WHO grade and MIB-1 (Ki-67) labeling index. Measurement of the expression levels of a small set of SAC genes may complement histological grade and other clinical parameters for predicting survival time

Genome Sequencing and Comparative Transcriptomics of the Model Entomopathogenic Fungi Metarhizium anisopliae and M. acridum

Metarhizium spp. are being used as environmentally friendly alternatives to chemical insecticides, as model systems for studying insect-fungus interactions, and as a resource of genes for biotechnology. We present a comparative analysis of the genome sequences of the broad-spectrum insect pathogen Metarhizium anisopliae and the acridid-specific M. acridum. Whole-genome analyses indicate that the genome structures of these two species are highly syntenic and suggest that the genus Metarhizium evolved from plant endophytes or pathogens. Both M. anisopliae and M. acridum have a strikingly larger proportion of genes encoding secreted proteins than other fungi, while ∼30% of these have no functionally characterized homologs, suggesting hitherto unsuspected interactions between fungal pathogens and insects. The analysis of transposase genes provided evidence of repeat-induced point mutations occurring in M. acridum but not in M. anisopliae. With the help of pathogen-host interaction gene database, ∼16% of Metarhizium genes were identified that are similar to experimentally verified genes involved in pathogenicity in other fungi, particularly plant pathogens. However, relative to M. acridum, M. anisopliae has evolved with many expanded gene families of proteases, chitinases, cytochrome P450s, polyketide synthases, and nonribosomal peptide synthetases for cuticle-degradation, detoxification, and toxin biosynthesis that may facilitate its ability to adapt to heterogenous environments. Transcriptional analysis of both fungi during early infection processes provided further insights into the genes and pathways involved in infectivity and specificity. Of particular note, M. acridum transcribed distinct G-protein coupled receptors on cuticles from locusts (the natural hosts) and cockroaches, whereas M. anisopliae transcribed the same receptor on both hosts. This study will facilitate the identification of virulence genes and the development of improved biocontrol strains with customized properties

Performance improvement of GaN based Schottky barrier ultraviolet photodetector by adding a thin AlGaN window layer

We propose a new structure of GaN based Schottky barrier ultraviolet photodetector, in which a thin n-type AlGaN window layer is added on the conventional n(-)-GaN/n(+)-GaN device structure. The performance of the Schottky barrier ultraviolet photodetector is found to be improved by the new structure. The simulation result shows that the new structure can reduce the negative effect of surface states on the performance of Schottky barrier GaN photodetectors, improving the quantum efficiency and decreasing the dark current. The investigations suggest that the new photodetector can exhibit a better responsivity by choosing a suitably high carrier concentration and thin thickness for the AlGaN window layer

A new p-n structure ultraviolet photodetector with p(-)-GaN active region

A new ultraviolet photodetector of employing p menus type GaN (p(-)-GaN) as the active layer is proposed. It is easy to obtain the p(-)-GaN layer with low carrier concentration. As a result, the depletion region can be increased and the quantum efficiency can be improved. The influence of some structure parameters on the performance of the new device is investigated. Through the simulation calculation, it is found that the quantum efficiency increases with the decrease of the barrier height between the metal electrode and the p(-)-GaN layer, and it is also found that the quantum efficiency can be improved by reducing the thickness of the p(-)-GaN layer. To fabricate the new photodetector with high performance, we should employ thin p(-)-GaN layer as the active layer and reduce the Schottky barrier height

A new Schottky barrier structure of GaN-based ultraviolet photodetector

A new GaN-based ultraviolet photodetector with Schottky barrior structure is proposed. Comparied with the conventional i-GaN/n(+) -GaN structure, there is an additional thin n-AlGaN cap layer on the i-GaN in the new structure. The simulation result demonstrates that the new structure leads to an increased quantum efficiency in GaN photodetection, since the negative effect of surface states on the photodetector is reduced in the new structure. In addition, it is suggested that the performance of device with the new structure could be further improved by employing an even thinner AlGaN cap layer with higher carrier concentration

Optical analysis of dislocation-related physical processes in GaN-based epilayers

In this paper, recent progresses in optical analysis of dislocation-related physical properties in GaN-based epilayers are surveyed with a brief review. The influence of dislocations on both near-band edge emission and yellow luminescence (YL) is examined either in a statistical way as a function of dislocation density or focused on individual dislocation lines with a high spatial resolution. Threading dislocations may introduce non-radiative recombination centers and enhance YL, but their effects are affected by the structural and chemical environment. The minority carrier diffusion length may be dependent on either dislocation density or impurity doping as confirmed by the result of photovoltaic spectra. The in situ optical monitoring of the strain evolution process is employed during GaN heteroepitaxy using an AIN interlayer. A typical transition of strain from compression to tension is observed and its correlation with the reduction and inclination of threading dislocation lines is revealed. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector

The leakage mechanism of GaN-based p-i-n (p-AlGaN/i-GaN/n-GaN) UV detector has been investigated. With the same dislocation density, devices made from material with higher density of V-pits on surface produce larger leakage current. SEM images show that some V-pits penetrate into i-GaN layer, sometimes even the n-GaN layer. If p-ohmic contact metal (Ni/Au) deposits in the V-pits, Schottky contact would be formed at the interface of metal and i-GaN, or form ohmic contact at the interface of metal and n-GaN. The existence of parallel Schottky junction and ohmic contact resistance enhances the leakage current greatly