Uncompensated magnetization and exchange-bias field in La0.7_{0.7}Sr0.3_{0.3}MnO3_3/YMnO3_3 bilayers: The influence of the ferromagnetic layer

We studied the magnetic behavior of bilayers of multiferroic and nominally antiferromagnetic o-YMnO$_3$ (375~nm thick) and ferromagnetic La$_{0.7}$Sr$_{0.3}$MnO$_3$ and La$_{0.67}$Ca$_{0.33}$MnO$_3$ ($8 \ldots 225~$nm), in particular the vertical magnetization shift $M_E$ and exchange bias field $H_E$ for different thickness and magnetic dilution of the ferromagnetic layer at different temperatures and cooling fields. We have found very large $M_E$ shifts equivalent to up to 100\% of the saturation value of the o-YMO layer alone. The overall behavior indicates that the properties of the ferromagnetic layer contribute substantially to the $M_E$ shift and that this does not correlate straightforwardly with the measured exchange bias field $H_E$.Comment: 10 figures, 8 page

Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO3_3 bilayer

We have investigated exchange bias effects in bilayers composed by the antiferromagnetic o-YMnO$_3$ and ferromagnetic Co thin film by means of SQUID magnetometry, magnetoresistance, anisotropic magnetoresistance and planar Hall effect. The magnetization and magnetotransport properties show pronounced asymmetries in the field and magnetization axes of the field hysteresis loops. Both exchange bias parameters, the exchange bias field $H_{E}(T)$ as well as the magnetization shift $M_E(T)$, vanish around the N\'eel temperature $T_N \simeq 45$ K. We show that the magnetization shift $M_E(T)$ is also measured by a shift in the anisotropic magnetoresistance and planar Hall resistance having those a similar temperature dependence as the one obtained from magnetization measurements. Because the o-YMnO$_3$ film is highly insulating, our results demonstrate that the $M_E(T)$ shift originates at the interface within the ferromagnetic Co layer. To show that the main results obtained are general and not because of some special characteristics of the o-YMO$_3$ layer, similar measurements were done in Co/CoO micro-wires. The transport and magnetization characterization of the micro-wires supports the main conclusion that these effects are related to the response of the ferromagnetic Co layer at the interface.Comment: 16 Figures, in press at J. Phys.: Condensed Matter 201

Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires

The magneto-transport properties of single proton-implanted ZnO and of Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7\%) doped ZnO microwires showed a non monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implantation and Li doping. The magnetic field dependence of the resistance might be explained by the formation of a magnetic/non magnetic heterostructure in the wire after proton implantation.Comment: 6 pages with 5 figure