Non-Geiger-Mode Single-Photon Avalanche Detector with Low Excess Noise

This design constitutes a self-resetting (gain quenching), room-temperature operational semiconductor single-photon-sensitive detector that is sensitive to telecommunications optical wavelengths and is scalable to large areas (millimeter diameter) with high bandwidth and efficiencies. The device can detect single photons at a 1,550-nm wavelength at a gain of 1 x 10(exp 6). Unlike conventional single photon avalanche detectors (SPADs), where gain is an extremely sensitive function to the bias voltage, the multiplication gain of this device is stable at 1 x 10(exp 6) over a wide range of bias from 30.2 to 30.9 V. Here, the multiplication gain is defined as the total number of charge carriers contained in one output pulse that is triggered by the absorption of a single photon. The statistics of magnitude of output signals also shows that the device has a very narrow pulse height distribution, which demonstrates a greatly suppressed gain fluctuation. From the histograms of both pulse height and pulse charge, the equivalent gain variance (excess noise) is between 1.001 and 1.007 at a gain of 1 x 10(exp 6). With these advantages, the device holds promise to function as a PMT-like photon counter at a 1,550- nm wavelength. The epitaxial layer structure of the device allows photons to be absorbed in the InGaAs layer, generating electron/hole (e-h) pairs. Driven by an electrical field in InGaAs, electrons are collected at the anode while holes reach the multiplication region (InAlAs p-i-n structure) and trigger the avalanche process. As a result, a large number of e-h pairs are created, and the holes move toward the cathode. Holes created by the avalanche process gain large kinetic energy through the electric field, and are considered hot. These hot holes are cooled as they travel across a p -InAlAs low field region, and are eventually blocked by energy barriers formed by the InGaAsP/ InAlAs heterojunctions. The composition of the InGaAsP alloy was chosen to have an 80 meV valance band offset with InAlAs, which is high enough to hinder the transport of the already cooled holes. Being stopped by the energy barrier, holes are accumulated at the junctions to shield the electric field, resulting in a decrease of the electric field in the multiplication region. Because the impact ionization rate is extremely sensitive to the magnitude of the electric field, the field-screening effect drastically reduces the impact ionization rate and quenches the output signals. After the avalanche pulse signal is self-quenched, the accumulated holes at the InGaAsP/ InAlAs interface escape the energy barrier through thermal excitation and tunneling and finally leave the device. The device is thus reset and ready for subsequent photon detection. This recovery time is controlled by the height of the energy barrier and the hole-cooling rate

Studies of the Synchronous Sensing Method in the Microfluidic Cell Impedance Detection

Microfluidic impedance sensors play a significant role in point-of-care applications, clinical tests and laboratory studies. Instead of the traditional signal process method with the envelope detector, filter banks and multistage amplifier, we have reported a new implement using synchronous sampling and orthogonal detecting. By studying the intensity and phase modulation in the cell impedance sensing progress, we have calculated the SNR of the new method compare with the raw data. Base on the physical model and the calculation, we have demonstrated a simulation result which shows a capability to detect the signal of 1um cell in a noisy environment

Differentiating and quantifying exosome secretion from a single cell using quasi-bound states in the continuum

One of the key challenges in biology is to understand how individual cells process information and respond to perturbations. However, most of the existing single-cell analysis methods can only provide a glimpse of cell properties at specific time points and are unable to provide cell secretion and protein analysis at single-cell resolution. To address the limits of existing methods and to accelerate discoveries from single-cell studies, we propose and experimentally demonstrate a new sensor based on bound states in the continuum to quantify exosome secretion from a single cell. Our optical sensors demonstrate high-sensitivity refractive index detection. Because of the strong overlap between the medium supporting the mode and the analytes, such an optical cavity has a figure of merit of 677 and sensitivity of 440 nm/RIU. Such results facilitate technological progress for highly conducive optical sensors for different biomedical applications