Abelianization of BPS Quivers and the Refined Higgs Index

We count Higgs "phase" BPS states of general non-Abelian quiver, possibly with loops, by mapping the problem to its Abelian, or toric, counterpart and imposing Weyl invariance later. Precise Higgs index computation is particularly important for quivers with superpotentials; the Coulomb "phase" index is recently shown to miss important BPS states, dubbed intrinsic Higgs states or quiver invariants. We demonstrate how the refined Higgs index is naturally decomposed to a sum over partitions of the charge. We conjecture, and show in simple cases, that this decomposition expresses the Higgs index as a sum over a set of partition-induced Abelian quivers of the same total charge but generically of smaller rank. Unlike the previous approach inspired by a similar decomposition of the Coulomb index, our formulae compute the quiver invariants directly, and thus offer a self-complete routine for counting BPS states.Comment: 38 pages, 13 figure

Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus

Thin flakes of black phosphorus (BP) are a two-dimensional (2D) semiconductor whose energy gap is predicted being sensitive to the number of layers and external perturbations. Very recently, it was found that a simple method of potassium (K) doping on the surface of BP closes its band gap completely, producing a Dirac semimetal state with a linear band dispersion in the armchair direction and a quadratic one in the zigzag direction. Here, based on first-principles density functional calculations, we predict that, beyond the critical K density of the gap closure, 2D massless Dirac Fermions (i.e., Dirac cones) emerge in K-doped few-layer BP, with linear band dispersions in all momentum directions, and the electronic states around Dirac points have chiral pseudospins and Berry's phase. These features are robust with respect to the spin-orbit interaction and may lead to graphene-like electronic transport properties with greater flexibility for potential device applications