3,400 research outputs found
Improvement of acid protease production by a mixed culture of Aspergillus niger and Aspergillus oryzae using solid-state fermentation technique
The synthesis of acid protease by Aspergillus oryzae AS3042 was enhanced significantly with the mixed culture of Aspergillus niger SL-09 using solid-state fermentation technique. The influence of carbon sources, nitrogen sources and the addition of phytic acid on acid protease production were investigated. The enzyme production varied depending on the nitrogen source. Apart from that, it was found that the enzyme activities formed in the mixed culture were enhanced dramatically by the addition of phytic acid to the medium. The response surface methodology (RSM) was used to optimize the medium composition for the production of acid protease and by this method the enzyme activity was enhanced near 5-fold higher than that obtained in the basal medium.Key words: Acid protease, Aspergillus niger, Aspergillus oryzae, solid-state culture, optimization, response surface methodology (RSM)
Inference of Allelopathy about Spartina Alterniflora to Scirpus Mariqueter by Effects of Activated Carbon on Soil
AbstractSpartina alterniflora Loisel is an invasive species in Jiuduansha Islands and threatens the survival of native species Scirpus mariqueter. In this study, activated carbon (AC) was applied to study the allelochemicals remained in the soil. Seed germination and seedling growth bioassays were used to test the allelopathic effect, and GC-MS was used to identify the allelochemicals. Our results showed: due to the invasion of S. alterniflora, germination of S. mariqueter seeds and the growth of seedlings were significantly inhibited. When AC was added into S. mariqueter soil, the germination had not been affected while the seedling growth was promoted significantly. When AC was added into the soil of S. alterniflora, both the germination and the seedling growth had an obvious improvement. All indicated that S. alterniflora soil contained allelochemicals which would be absorbed by AC. The identified allelochemicals were hexadecanoic acid, octadecanoic acid, dibutyl phthalate, (adipic acid, isohexyl methyl ester) and (adipic acid, di (oct-4-yl ester))
Thermally induced conduction type conversion in n-type InP
n-type semiconducting InP is changed into p-type semiconducting by short time annealing at 700 °C. Further annealing for a longer time leads to a second conduction-type conversion changing the material back to n type again but with a much higher resistivity. These conduction conversions indicate the formation of both acceptor and donor defects and the progressive variation of their relative concentrations during annealing. © 1999 American Institute of Physics.published_or_final_versio
Electrical and FT-IR measurements of undoped N-type INP materials grown from various stoichiometric melts
P-rich, In-rich and Stoichiometric undoped InP melts have been synthesed by phosphorus in-situ injection method. InP crystal ingots have been grown from these melts by Liquid Encapsulated Czochralski (LEC). Samples from these ingots grown from various Stoichiometric melts have been characterized by Hall Effect and Fourier Transform Infrared (FT-IR) spectroscopy measurements respectively. The Hall Effect measurement results indicate that the net carrier concentration of P-inch undoped InP is higher than that of In-rich and Stoichiometric undoped InP materials. FT-IR spectroscopy measurements reveal that there are intensive absorption peaks which have been proved to be hydrogen related indium vacancy complex V InH 4. By comparing FT-IR spectra, it is found that P-rich InP material has the most intensive absorption peak of V InH 4, while In-rich InP material has the weakest absorption peak.published_or_final_versio
A hybrid model for molecular-dynamics simulations of semiflexible main-chain liquid-crystalline polymer melts
2005-2006 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe
Performance of criteria for selecting evolutionary models in phylogenetics: a comprehensive study based on simulated datasets
<p>Abstract</p> <p>Background</p> <p>Explicit evolutionary models are required in maximum-likelihood and Bayesian inference, the two methods that are overwhelmingly used in phylogenetic studies of DNA sequence data. Appropriate selection of nucleotide substitution models is important because the use of incorrect models can mislead phylogenetic inference. To better understand the performance of different model-selection criteria, we used 33,600 simulated data sets to analyse the accuracy, precision, dissimilarity, and biases of the hierarchical likelihood-ratio test, Akaike information criterion, Bayesian information criterion, and decision theory.</p> <p>Results</p> <p>We demonstrate that the Bayesian information criterion and decision theory are the most appropriate model-selection criteria because of their high accuracy and precision. Our results also indicate that in some situations different models are selected by different criteria for the same dataset. Such dissimilarity was the highest between the hierarchical likelihood-ratio test and Akaike information criterion, and lowest between the Bayesian information criterion and decision theory. The hierarchical likelihood-ratio test performed poorly when the true model included a proportion of invariable sites, while the Bayesian information criterion and decision theory generally exhibited similar performance to each other.</p> <p>Conclusions</p> <p>Our results indicate that the Bayesian information criterion and decision theory should be preferred for model selection. Together with model-adequacy tests, accurate model selection will serve to improve the reliability of phylogenetic inference and related analyses.</p
Optical tuning of exciton and trion emissions in monolayer phosphorene
© 2015 CIOMP. All rights reserved. Monolayer phosphorene provides a unique two-dimensional (2D) platform to investigate the fundamental dynamics of excitons and trions (charged excitons) in reduced dimensions. However, owing to its high instability, unambiguous identification of monolayer phosphorene has been elusive. Consequently, many important fundamental properties, such as exciton dynamics, remain underexplored. We report a rapid, noninvasive, and highly accurate approach based on optical interferometry to determine the layer number of phosphorene, and confirm the results with reliable photoluminescence measurements. Furthermore, we successfully probed the dynamics of excitons and trions in monolayer phosphorene by controlling the photo-carrier injection in a relatively low excitation power range. Based on our measured optical gap and the previously measured electronic energy gap, we determined the exciton binding energy to be ∼0.3 eV for the monolayer phosphorene on SiO2/Si substrate, which agrees well with theoretical predictions. A huge trion binding energy of ∼100 meV was first observed in monolayer phosphorene, which is around five times higher than that in transition metal dichalcogenide (TMD) monolayer semiconductor, such as MoS2. The carrier lifetime of exciton emission in monolayer phosphorene was measured to be ∼220 ps, which is comparable to those in other 2D TMD semiconductors. Our results open new avenues for exploring fundamental phenomena and novel optoelectronic applications using monolayer phosphorene
Extraordinary photoluminescence and strong temperature/angle-dependent raman responses in few-layer phosphorene
© 2014 American Chemical Society. Phosphorene is a new family member of two-dimensional materials. We observed strong and highly layer-dependent photoluminescence in few-layer phosphorene (two to five layers). The results confirmed the theoretical prediction that few-layer phosphorene has a direct and layer-sensitive band gap. We also demonstrated that few-layer phosphorene is more sensitive to temperature modulation than graphene and MoS2 in Raman scattering. The anisotropic Raman response in few-layer phosphorene has enabled us to use an optical method to quickly determine the crystalline orientation without tunneling electron microscopy or scanning tunneling microscopy. Our results provide much needed experimental information about the band structures and exciton nature in few-layer phosphorene
Compensation defects in annealed undoped liquid encapsulated Czochralski InP
As-grown undoped n-type semiconducting and annealed undoped semi-insulating (SI) liquid encapsulated Czochralski (LEC) InP has been studied by temperature dependent Hall measurement, photoluminescence spectroscopy, infrared absorption, and photocurrent spectroscopy. P-type conduction SI InP can frequently be obtained by annealing undoped LEC InP. This is caused by a high concentration of thermally induced native acceptor defects. In some cases, it can be shown that the thermally induced n-type SI property of undoped LEC InP is caused by a midgap donor compensating for the net shallow acceptors. The midgap donor is proposed to be a phosphorus antisite related defect. Traps in annealed SI InP have been detected by photocurrent spectroscopy and have been compared with reported results. The mechanisms of defect formation are discussed. © 1999 American Institute of Physics.published_or_final_versio
Compensation ratio-dependent concentration of a V InH 4 complex in n-type liquid encapsulated Czochralski InP
The concentration of hydrogen-indium vacancy complex V InH 4 in liquid encapsulated Czochralski undoped and Fe-doped n-type InP has been studied by low-temperature infrared absorption spectroscopy. The V InH 4 complex is found to be a dominant intrinsic shallow donor defect with concentrations up to ∼10 16 cm -3 in as-grown liquid encapsulated Czochralski InP. The concentration of the V InH 4 complex is found to increase with the compensation ratio in good agreement with the proposed defect formation model of Walukiewicz [W. Walukiewicz, Phys. Rev. B 37, 4760 (1998); Appl. Phys. Lett. 54, 2094 (1989)], which predicts a Fermi-level-dependent concentration of amphoteric defects. © 1998 American Institute of Physics.published_or_final_versio
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