Stability of pp-orbital Bose-Einstein condensates in optical checkerboard and square lattices

We investigate $p$-orbital Bose-Einstein condensates in both the square and checkerboard lattice by numerically solving the Gross-Pitaevskii equation. The periodic potential for the latter lattice is taken exactly from the recent experiment [Nature Phys. 7, 147 (2011)]. It is confirmed that the staggered orbital-current state is the lowest-energy state in the $p$ band. Our numerical calculation further reveals that for both lattices the staggered $p$-orbital state suffers Landau instability but the situation is remarkably different for dynamical instability. A dynamically stable parameter region is found for the checkerboard lattice, but not for the square.Comment: 7 pages, 7 figure

A three-dimensional multidimensional gas-kinetic scheme for the Navier-Stokes equations under gravitational fields

This paper extends the gas-kinetic scheme for one-dimensional inviscid shallow water equations (J. Comput. Phys. 178 (2002), pp. 533-562) to multidimensional gas dynamic equations under gravitational fields. Four important issues in the construction of a well-balanced scheme for gas dynamic equations are addressed. First, the inclusion of the gravitational source term into the flux function is necessary. Second, to achieve second-order accuracy of a well-balanced scheme, the Chapman-Enskog expansion of the Boltzmann equation with the inclusion of the external force term is used. Third, to avoid artificial heating in an isolated system under a gravitational field, the source term treatment inside each cell has to be evaluated consistently with the flux evaluation at the cell interface. Fourth, the multidimensional approach with the inclusion of tangential gradients in two-dimensional and three-dimensional cases becomes important in order to maintain the accuracy of the scheme. Many numerical examples are used to validate the above issues, which include the comparison between the solutions from the current scheme and the Strang splitting method. The methodology developed in this paper can also be applied to other systems, such as semi-conductor device simulations under electric fields.Comment: The name of first author was misspelled as C.T.Tian in the published paper. 35 pages,9 figure