Induced pluripotent stem cells and regenerative medicine

AbstractStem cells, a special subset of cells derived from embryo or adult tissues, are known to present the characteristics of self-renewal, multiple lineages of differentiation, high plastic capability, and long-term maintenance. Recent reports have further suggested that neural stem cells (NSCs) derived from the adult hippocampal and subventricular regions possess the utilizing potential to develop the transplantation strategies and to screen the candidate agents for neurogenesis, neuroprotection, and neuroplasticity in neurodegenerative diseases. In this article, we review the roles of NSCs and other stem cells in neuroprotective and neurorestorative therapies for neurological and psychiatric diseases. We show the evidences that NSCs play the key roles involved in the pathogenesis of several neurodegenerative disorders, including depression, stroke, and Parkinson’s disease. Moreover, the potential and possible utilities of induced pluripotent stem cells, reprogramming from adult fibroblasts with ectopic expression of four embryonic genes, are also reviewed and further discussed. An understanding of the biophysiology of stem cells could help us elucidate the pathogenicity and develop new treatments for neurodegenerative disorders. In contrast to cell transplantation therapies, the application of stem cells can further provide a platform for drug discovery and small molecular testing, including Chinese herbal medicines. In addition, the high-throughput stem cell-based systems can be used to elucidate the mechanisms of neuroprotective candidates in translation medical research for neurodegenerative diseases

Synthesis and Applications of Cyano-Vinylene-Based Polymers Containing Cyclopentadithiophene and Dithienosilole Units for Photovoltaic Cells

ABSTRACT: Two b-cyano-thiophenevinylene-based polymers containing cyclopentadithiophene (CPDT-CN) and dithienosilole (DTS-CN) units were synthesized via Stille coupling reaction with Pd(PPh 3 ) 4 as a catalyst. The effects of the bridged atoms (C and Si) and cyano-vinylene groups on their thermal, optical, electrochemical, charge transporting, and photovoltaic properties were investigated. Both polymers possessed the highest occupied molecular orbital (HOMO) levels of about À5.30 eV and the lowest unoccupied molecular orbital (LUMO) levels of about À3.60 eV, and covered broad absorption ranges with narrow optical band gaps (ca. 1.6 eV). The bulk heterojunction polymer solar cell (PSC) devices containing an active layer o

Shallow Iodine Defects Accelerate the Degradation of α-Phase Formamidinium Perovskite

Shallow defects are mostly benign in covalent semiconductors, such as silicon, given that they do not constitute non-radiative recombination sites. In contrast, the existence of shallow defects in ionic perovskite crystals might have significant repercussions on the long-term stability of perovskite solar cells (PSCs) because of the metastability of the ubiquitous formamidinium lead triiodide (FAPbI₃) perovskite and the migration of charged point defects. Here, we show that shallow iodine interstitial defects (I_i) can be generated unintentionally during commonly used post-fabrication treatments, which can lower the cubic-to-hexagonal transformation barrier of FAPbI3-based perovskites to accelerate its phase degradation. We demonstrate that concurrently avoiding the generation of I_i and the more effective passivation of iodine vacancies (V_ī) can improve the thermodynamic stability of the films and operational stability of the PSCs. Our most stable PSC retained 92.1 % of its initial performance after nearly 1,000 h of continuous illumination operational stability testing

Shallow Iodine Defects Accelerate the Degradation of α-Phase Formamidinium Perovskite

Shallow defects are mostly benign in covalent semiconductors, such as silicon, given that they do not constitute non-radiative recombination sites. In contrast, the existence of shallow defects in ionic perovskite crystals might have significant repercussions on the long-term stability of perovskite solar cells (PSCs) because of the metastability of the ubiquitous formamidinium lead triiodide (FAPbI₃) perovskite and the migration of charged point defects. Here, we show that shallow iodine interstitial defects (I_i) can be generated unintentionally during commonly used post-fabrication treatments, which can lower the cubic-to-hexagonal transformation barrier of FAPbI3-based perovskites to accelerate its phase degradation. We demonstrate that concurrently avoiding the generation of I_i and the more effective passivation of iodine vacancies (V_ī) can improve the thermodynamic stability of the films and operational stability of the PSCs. Our most stable PSC retained 92.1 % of its initial performance after nearly 1,000 h of continuous illumination operational stability testing

Janus monolayers of transition metal dichalcogenides.

Structural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers or stacked van der Waals heterostructures. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields or, as theoretically proposed, with an asymmetric out-of-plane structural configuration. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS2 monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges