The localization of electrons in the band structure of Dy with film thickness

By growing dysprosium films on Cu(100), the electronic band structure of dysprosium metal has been investigated using synchrotron radiation photoemission. The author has found that 5d electrons become localized with increasing dysprosium coverage. The localization of the 5d band with increasing thickness leads to changes in the 5p multiplet oscillator strengths

Probing the temperature dependence of the dysprosium-silicon interface

Photoemission electron spectroscopic measurements were done on the Dy-Si interfaces prepared by Dy deposition onto cleaved Si(111) surface with the use of synchrotron radiation as a light source. Results show that an interfacial reaction takes place even at room temperature. Temperature dependence studies for Dy deposited on Si(111) demonstrate the importance of overlayer thickness and substrate temperature during deposition. © 1992 Società Italiana di Fisica

Electronic Structure of Thin Dysprosium Overlayers

[No abstract available

Photonic band structures of ZnX (X = S, Se, Te)

Dielectric photonic band gap materials have received broad attention due to their distinguished performance in optical devices, microwave generation and laser acceleration. We have theoretically studied photonic band structure parameters of ZnX (X = S, Se, Te). The photonic band structure calculations are performed using the MIT photonic-bands package (MPB) to calculate eigenmodes frequency domain of Maxwell's equations with periodic boundary conditions. Eigenmodes are calculated in Fourier domain. Model calculations are based on two-dimensional periodic crystal structure. The lattices consist of cylindrical rods and gaps between the rods filled with air. Single-site zinc blende lattices are considered. In order to get "gap maps" we have calculated the gaps as a function of radius of the rods. Moreover we have calculated the nature of guided modes in line defect waveguide. Our results are in good agreement with those in the literature

Temperature dependent change of the MnSK-edge

WOS: 000232894100064The x-ray absorption near-edge structure (XANES) of Mn K-edge in MnS have been investigated. The full multiple scattering approach has been applied to the calculation of Mn K edge XANES spectra of MnS. The calculations are based on different choices of one electron potentials according to Manganese coordinations by using the real space multiple scattering method FEFF 8 code. The crystallographic and electronic structure of the MnS are tested at various temperature ranges from 300 to 573 K. We have found prominent changes in the XANES spectra of MnS by the change of the temperature. Such observed changes are explained by considering the structural, electronic and spectroscopic properties. The results are consistent with experimental spectra

Temperature dependent change of the MnS K-edge

The x-ray absorption near-edge structure (XANES) of Mn K-edge in MnS have been investigated. The full multiple scattering approach has been applied to the calculation of Mn K edge XANES spectra of MnS. The calculations are based on different choices of one electron potentials according to Manganese coordinations by using the real space multiple scattering method FEFF 8 code. The crystallographic and electronic structure of the MnS are tested at various temperature ranges from 300 to 573 K. We have found prominent changes in the XANES spectra of MnS by the change of the temperature. Such observed changes are explained by considering the structural, electronic and spectroscopic properties. The results are consistent with experimental spectra

Surface electronic structure determination by photoelectron spectroscopy

Reports the result of dysprosium overlayers on silicon single crystal. The electronic band structure of thin dysprosium overlayers on Si(111) is studied by angle resolved photoemission with synchrotron radiation. The result of this study showed strong interaction between dysprosium and silicon atoms. It is shown that the dysprosium grows with initial silicide formation on Si(111) and this formation is independent from substrate temperature for thin Dy coverage while growing 20 Å or higher Dy, temperature has a strong effect. -Author

Electronic and structural properties of SnO and SnO2 thin films studied by X-ray-absorption spectroscopy

Tin oxide thin films have been investigated by X-ray Absorption Fine Structure spectroscopy (XAFS). XAFS provides a description of the structure of the films. The paper also presents a structural characterisation of the SnO 2 thin films and their crystallisation behaviour by annealing at increasing temperatures. The x-ray absorption fine structure (XAFS) of Sn L III - edge in SnO and SnO2 have been investigated. The full multiple scattering approach has been applied to the calculation of Sn LIII edge XANES spectra of SnO. The calculations are based on different choices of one electron potentials according to Tin coordinations by using the real space multiple scattering method FEFF 8.2 code. The crystallographic and electronic structure of the SnO and SnO2 are tested at various temperature ranges from 300 to 873 K. We have found prominent changes in the XANES spectra of Tin oxide thin films by the change of the temperature. Such observed changes are explained by considering the structural, electronic and spectroscopic properties. The results are consistent with experimental spectra

The electronic structure of wurtzite MnS

National Nuclear Energy Agency of Indonesia (BATAN);Directorate Higher Edu. Ministry Natl. Edu. Indonesia (DIKTI);International Atomic Energy Agency (IAEA);International Union of Crystallography (IUCr);Abdus Salam International Centre for Theoretical Physics (ICTP);Deutsche Forschungsgemeinschaft (DFG)International Conference on Neutron and X-ray Scattering 2007, ICNX 2007 --23 July 2007 through 31 July 2007 -- Serpong and Bandung --Manganese sulfide thin films have been investigated by X-ray Absorption Fine Structure spectroscopy (XAFS). XAFS provides a description of the structure of the films. The paper also presents a structural characterisation of the wurtzite MnS thin films and their crystallisation behaviour by annealing at increasing temperatures. The x-ray absorption fine structure (XAFS) of Mn K-edge and S K-edge in wurtzite MnS have been investigated. The full multiple scattering approach has been applied to the calculation of Mn K edge XANES spectra of MnS. The calculations are based on different choices of one electron potentials according to Mn coordinations by using the real space multiple scattering method FEFF 8.0 code. The crystallographic and electronic structure of the MnS are tested at various temperature ranges from 300 to 573 K. We have found prominent changes in the XANES spectra of Mangeanese sulfide thin films by the change of the temperature. Such observed changes are explained by considering the structural, electronic and spectroscopic properties. The results are consistent with experimental spectra. © 2008 American Institute of Physics

X-ray photoabsorption and total electron yield of Fe thin films at the L2,3 edge

7th International School and Symposium on Synchrotron Radiation in Natural Science and Proceedings of the International Conference on -- -- --We have studied thin Fe films by soft X-ray absorption spectroscopy to determine the total electron yield (TEY) sampling depth (?e) at the Fe L2,3 edge. For this, we have recorded high-resolution X-ray absorption spectra in TEY resolving the near edge X-ray absorption fine structure (NEXAFS). Our analysis yields a value of ?e = 21 ± 2 Å for the TEY sampling depth. © 2005 Elsevier B.V. All rights reserved.U.S. Department of EnergyThe authors express their thanks to Curtis Troxel for his support at the Stanford Synchrotron Radiation Laboratory (SSRL), where the NEXAFS experiments have been carried out. SSRL is supported by the Department of Energy, Office of Basic Energy Science. Support by SSRL and the DOE Cooperative Research Program for SESAME project is acknowledged by Y. Ufuktepe