On piezophase effects in mechanically loaded atomic scale Josephson junctions

The response of an intrinsic Josephson contact to externally applied stress is considered within the framework of the dislocation-induced atomic scale Josephson effect. The predicted quasi-periodic (Fraunhofer-like)stress-strain and stress-current patterns should manifest themselves for experimentally accessible values of applied stresses in intrinsically defected (e.g.,twinned) crystals.Comment: REVTEX (epsf style), 2 EPS figure

Electronic and optical properties of beryllium chalcogenides/silicon heterostructures

We have calculated electronic and optical properties of Si/BeSe$_{0.41}$Te$_{0.59}$ heterostructures by a semiempirical $sp^{3}s^{*}$ tight-binding method. Tight-binding parameters and band bowing of BeSe$_{0.41}$Te$_{0.59}$ are considered through a recent model for highly mismatched semiconductor alloys. The band bowing and the measurements of conduction band offset lead to a type II heterostucture for Si/BeSe$_{0.41}$Te$_{0.59}$ with conduction band minimum in the Si layer and valence band maximum in the BeSe$_{0.41}$Te$_{0.59}$ layer. The electronic structure and optical properties of various (Si$_{2})_{n }$/(BeSe$_{0.41}$Te$_{0.59})_{m}$ [001] superlattices have been considered. Two bands of interface states were found within the bandgap of bulk Si. Our calculations indicate that the optical edges are below the fundamental bandgap of bulk Si and the transitions are optically allowed.Comment: 16 pager, 7 figure

Low frequency shot noise in double-barrier resonant-tunneling structures in a strong magnetic field

Low frequency shot noise and dc current profiles for a double-barrier resonant-tunneling structure (DBRTS) under a strong magnetic field applied perpendicular to the interfaces have been studied. Both the structures with 3D and 2D emitter have been considered. The calculations, carried out with the Keldysh Green's function technique, show strong dependencies of both the current and noise profiles on the bias voltage and magnetic field. The noise spectrum appears sensitive to charge accumulation due to barriere capacitances and both noise and dc-current are extremely sensitive to the Landau levels' broadening in the emitter electrode and can be used as a powerful tool to investigate the latter. As an example, two specific shapes of the levels' broadening have been considered - a semi-elliptic profile resulting from self-consistent Born approximation, and a Gaussian one resulting from the lowest order cumulant expansion.Comment: 15 pages Revtex, 8 Postscript figures included. To be published in Journal of Physics: Condensed matte

Intrinsic tunneling spectra of Bi_2(Sr_{2-x}La_x)CuO_6

We have measured intrinsic-tunneling spectra of a single CuO-layer La-doped Bi_2Sr_{2-x}La_xCuO_{6+\delta} (Bi2201-La_x). Despite a difference of a factor of three in the optimal superconducting critical temperatures for Bi2201-La_{0.4} and Bi2212 (32 and 95 K, respectively) and different spectral energy scales, we find that the pseudogap vanishes at a similar characteristic temperature T*\approx 230-300K for both compounds. We find also that in Bi2201-La_x, PG humps are seen as sharp peaks and, in fact, even dominate the intrinsic spectra.Comment: Submitted to Phys. Rev. Let

Effect of nonlinearity on the dynamics of a particle in dc field-induced systems

Dynamics of a particle in a perfect chain with one nonlinear impurity and in a perfect nonlinear chain under the action of dc field is studied numerically. The nonlinearity appears due to the coupling of the electronic motion to optical oscillators which are treated in adiabatic approximation. We study for both the low and high values of field strength. Three different range of nonlinearity is obtained where the dynamics is different. In low and intermediate range of nonlinearity, it reduces the localization. In fact in the intermediate range subdiffusive behavior in the perfect nonlinear chain is obtained for a long time. In all the cases a critical value of nonlinear strength exists where self-trapping transition takes place. This critical value depends on the system and the field strength. Beyond the self-trapping transition nonlinearity enhances the localization.Comment: 9 pages, Revtex, 6 ps figures include

Ab-initio Molecular Dynamics study of electronic and optical properties of silicon quantum wires: Orientational Effects

We analyze the influence of spatial orientation on the optical response of hydrogenated silicon quantum wires. The results are relevant for the interpretation of the optical properties of light emitting porous silicon. We study (111)-oriented wires and compare the present results with those previously obtained within the same theoretical framework for (001)-oriented wires [F. Buda {\it et al.}, {\it Phys. Rev. Lett.} {\bf 69}, 1272, (1992)]. In analogy with the (001)-oriented wires and at variance with crystalline bulk silicon, we find that the (111)-oriented wires exhibit a direct gap at ${\bf k}=0$ whose value is largely enhanced with respect to that found in bulk silicon because of quantum confinement effects. The imaginary part of the dielectric function, for the external field polarized in the direction of the axis of the wires, shows features that, while being qualitatively similar to those observed for the (001) wires, are not present in the bulk. The main conclusion which emerges from the present study is that, if wires a few nanometers large are present in the porous material, they are optically active independently of their specific orientation.Comment: 14 pages (plus 6 figures), Revte

Transient response of a quantum wave to an instantaneous potential step switching

The transient response of a stationary state of a quantum particle in a step potential to an instantaneous change in the step height (a simplified model for a sudden bias switch in an electronic semiconductor device) is solved exactly by means of a semianalytical expression. The characteristic times for the transient process up to the new stationary state are identified. A comparison is made between the exact results and an approximate method.Comment: 8 pages, 8 figures, Revtex

Coherent States of SU(l,1)SU(l,1) groups

This work can be considered as a continuation of our previous one (J.Phys., 26 (1993) 313), in which an explicit form of coherent states (CS) for all SU(N) groups was constructed by means of representations on polynomials. Here we extend that approach to any SU(l,1) group and construct explicitly corresponding CS. The CS are parametrized by dots of a coset space, which is, in that particular case, the open complex ball $CD^{l}$. This space together with the projective space $CP^{l}$, which parametrizes CS of the SU(l+1) group, exhausts all complex spaces of constant curvature. Thus, both sets of CS provide a possibility for an explicit analysis of the quantization problem on all the spaces of constant curvature.Comment: 22 pages, to be published in "Journal of Physics A

Superlattice Magnetophonon Resonances in Strongly Coupled InAs/GaSb Superlattices

We report an experimental study of miniband magnetoconduction in semiconducting InAs/GaSb superlattices. For samples with miniband widths below the longitudinal optical phonon energy we identify a new superlattice magnetophonon resonance (SLMPR) caused by resonant scattering of electrons across the mini-Brillouin zone. This new resonant feature arises directly from the drift velocity characteristics of the superlattice dispersion and total magnetic quantisation of the superlattice Landau level minibands.Comment: 9 pages, 8 figures, submitted to Phys. Rev.