A self-rectifying alo y bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

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Self-selection unipolar HfOx-Based RRAM

10.1109/TED.2012.2223821IEEE Transactions on Electron Devices601391-395IETD

Ni electrode unipolar resistive RAM performance enhancement by AlO y incorporation into HfOx switching dielectrics

10.1109/LED.2011.2161259IEEE Electron Device Letters3291290-1292EDLE

A self-rectifying HfO x-based unipolar RRAM with Nisi electrode

10.1109/LED.2011.2181971IEEE Electron Device Letters334585-587EDLE

A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration

10.1109/LED.2010.2099205IEEE Electron Device Letters323396-398EDLE

High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application

Digest of Technical Papers - Symposium on VLSI Technology44-45DTPT

Self-rectifying and forming-free unipolar HfO x based-high performance RRAM built by fab-avaialbe materials

10.1109/IEDM.2011.6131648Technical Digest - International Electron Devices Meeting, IEDM31.2.1-31.2.4TDIM