Digest of Technical Papers - Symposium on VLSI Technology44-45DTPT

Du, A.Y.

Fang, Z.

Gao, B.

Kang, J.F.

Li, M.F.

Nguyen, B.Y.

Pey, K.L.

Tran, X.A.

Wang, Z.R.

Wu, L.

Yeo, Y.C.

Yu, H.Y.

ScholarBank@NUS

High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application

We report a high performance unipolar RRAM with Ni-electrode/HfO x/AlOy/p+-Si structure, compatible with Si-diode selector for 3D cross-bar implementation. Highlights of the demonstrated RRAM include 1) a high on/off resistance ratio of ??10 5; 2) ??100% device yield on a 6-inch wafer; 3) excellent cycle-to-cycle and device-to-device uniformity of switching parameters (e.g. Vset, Vreset, and HRS/LRS currents); 4) satisfactory pulse switching endurance (&gt; 106 cycles); 5) high temperature retention (&gt;105 s @ 120??C), and high temperature operating stability (&gt; 200??C) without threshold resistive switching; 6) a fast set/rest speed of ??10/30 ns; 7) full CMOS compatible materials and process: with p +-Si bottom electrode, avoiding the use of noble metals, e.g. Pt. ? 2011 JSAP (Japan Society of Applied Physi.EI

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High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application

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Institutional Repository of Peking University