Spatial Dependence of the Phonon-Limited Mobility in Arbitrarily Oriented Si-Nanowires

The study of the transport properties of Si-Nanowires (NWs) is a research field of high interest. The spatial dependence of the low-field mobility and, in particular, the role of the corners is still not clear. Only recently, Lee et al. have considered their impact on the mobility through the development of a Spatial Dependent Mobility (SDM) expression. In this work, we extend their approach to study the phonon-limited mobility (μph ) of arbitrarily oriented square NWs.Work supported by the projects P09-TIC-4873, FIS-2008-05805 and FIS-2011-26005. E. González Marín also acknowledges the FPU program

Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs

This work studies the influence of the back-gate bias on the threshold voltage (V T ) and the electron mobility of silicon trigate devices over ultra-thin-box. The analysis allows us to confirm the possibility of achieving body factors higher than γ=0.1 as long as the width is increased and the height is reduced as much as possible. Also, we have demonstrated the impact of the back-gate biasing on the electron mobility using state-of-the-art scattering models for 2D confined devices.This work was supported by the Spanish Government under Project FIS2011-26005 and the FPU program, the Junta de Andalucía under Project P09-TIC4873, and the CEI-BioTIC GENIL program under the start-up project PYR-2012-5

Hole mobility of cylindrical GaSb nanowires

The hole mobility of GaSb field-effect transistor nanowires is analyzed as a function of the device orientation and gate bias. To this purpose, a self-consistent Poisson-Schrödinger solver with an 88 k·p Hamiltonian is employed to study the electrostatics, and the hole mobility is calculated under the momentum relaxation time solution of the Boltzmann transport equation including the main high-field scattering mechanisms.The authors acknowledge the support by the Spanish Government under the Project TEC2014-59730-R

Técnicas bayesianas aplicadas al procesado de señal en comunicaciones y genómica

Tesis Univ. Granada. Departamento de Física Aplicada. Leída el 11 de julio de 200

Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires

In this work, a simulation-based study of the gate capacitance of III-V nanowires is performed by using a 2D Schrödinger-Poisson solver. The effective mass approximation, including non-parabolic corrections, is used to model the semiconductor conduction band. Also,wave-function penetration into the gate dielectric is considered. We assess the impact of parameters such as the gate-insulator effective mass and the satellite conduction band valleys energy offsets.Work supported by the projects P09-TIC-4873, FIS-2008-05805 and FIS-2011-26005. E. González Marín also acknowledges the FPU program

Back-Gate Biasing Influence on the Electron Mobility and the Threshold Voltage of Ultra Thin Box Multigate MOSFETs

This work studies the influence of the back-gate bias on the threshold voltage (V T ) and the electron mobility of silicon trigate devices over ultra-thin-box. The analysis allows us to confirm the possibility of achieving body factors higher than γ=0.1 as long as the width is increased and the height is reduced as much as possible. Also, we have demonstrated the impact of the back-gate biasing on the electron mobility using state-of-the-art scattering models for 2D confined devices.This work was supported by the Spanish Government under Project FIS2011-26005 and the FPU program, the Junta de Andalucía under Project P09-TIC4873, and the CEI-BioTIC GENIL program under the start-up project PYR-2012-5

Hole mobility of cylindrical GaSb nanowires

The hole mobility of GaSb field-effect transistor nanowires is analyzed as a function of the device orientation and gate bias. To this purpose, a self-consistent Poisson-Schrödinger solver with an 88 k·p Hamiltonian is employed to study the electrostatics, and the hole mobility is calculated under the momentum relaxation time solution of the Boltzmann transport equation including the main high-field scattering mechanisms.The authors acknowledge the support by the Spanish Government under the Project TEC2014-59730-R