Additional file 2: of Danish first aid books compliance with the new evidence-based non-resuscitative first aid guidelines

Manual for answering questions (Translated). (PDF 537 kb

Additional file 1: of Orofacial symptoms and oral health-related quality of life in juvenile idiopathic arthritis: a two-year prospective observational study

Prevalence of items impacting the OHRQOL among patients with and without TMJ-arthritis symptoms. (DOCX 26 kb

Using TiO₂ as a Conductive Protective Layer for Photocathodic H₂ Evolution

Surface passivation is a general issue for Si-based photoelectrodes because it progressively hinders electron conduction at the semiconductor/electrolyte interface. In this work, we show that a sputtered 100 nm TiO₂ layer on top of a thin Ti metal layer may be used to protect an n⁺p Si photocathode during photocatalytic H₂ evolution. Although TiO₂ is a semiconductor, we show that it behaves like a metallic conductor would under photocathodic H₂ evolution conditions. This behavior is due to the fortunate alignment of the TiO₂ conduction band with respect to the hydrogen evolution potential, which allows it to conduct electrons from the Si while simultaneously protecting the Si from surface passivation. By using a Pt catalyst the electrode achieves an H₂ evolution onset of 520 mV vs NHE and a Tafel slope of 30 mV when illuminated by the red part (λ > 635 nm) of the AM 1.5 spectrum. The saturation photocurrent (H₂ evolution) was also significantly enhanced by the antireflective properties of the TiO₂ layer. It was shown that with proper annealing conditions these electrodes could run 72 h without significant degradation. An Fe²⁺/Fe³⁺ redox couple was used to help elucidate details of the band diagram

Protection of p⁺‑n-Si Photoanodes by Sputter-Deposited Ir/IrO_<i>x</i> Thin Films

Sputter deposition of Ir/IrO_<i>x</i> on p⁺-n-Si without interfacial corrosion protection layers yielded photoanodes capable of efficient water oxidation (OER) in acidic media (1 M H₂SO₄). Stability of at least 18 h was shown by chronoamperomety at 1.23 V versus RHE (reversible hydrogen electrode) under 38.6 mW/cm² simulated sunlight irradiation (λ > 635 nm, AM 1.5G) and measurements with quartz crystal microbalances. Films exceeding a thickness of 4 nm were shown to be highly active though metastable due to an amorphous character. By contrast, 2 nm IrO_<i>x</i> films were stable, enabling OER at a current density of 1 mA/cm² at 1.05 V vs. RHE. Further improvement by heat treatment resulted in a cathodic shift of 40 mV and enabled a current density of 10 mA/cm² (requirements for a 10% efficient tandem device) at 1.12 V vs. RHS under irradiation. Thus, the simple IrO_<i>x</i>/Ir/p⁺-n-Si structures not only provide the necessary overpotential for OER at realistic device current, but also harvest ∼100 mV of free energy (voltage) which makes them among the best-performing Si-based photoanodes in low-pH media

Comparison of the Performance of CoP-Coated and Pt-Coated Radial Junction n⁺p‑Silicon Microwire-Array Photocathodes for the Sunlight-Driven Reduction of Water to H₂(g)

The electrocatalytic performance for hydrogen evolution has been evaluated for radial-junction n⁺p-Si microwire (MW) arrays with Pt or cobalt phosphide, CoP, nanoparticulate catalysts in contact with 0.50 M H₂SO₄(aq). The CoP-coated (2.0 mg cm^–2) n⁺p-Si MW photocathodes were stable for over 12 h of continuous operation and produced an open-circuit photovoltage (<i>V</i>_oc) of 0.48 V, a light-limited photocurrent density (<i>J</i>_ph) of 17 mA cm^–2, a fill factor (ff) of 0.24, and an ideal regenerative cell efficiency (η_IRC) of 1.9% under simulated 1 Sun illumination. Pt-coated (0.5 mg cm^–2) n⁺p-Si MW-array photocathodes produced <i>V</i>_oc = 0.44 V, <i>J</i>_ph = 14 mA cm^–2, ff = 0.46, and η = 2.9% under identical conditions. Thus, the MW geometry allows the fabrication of photocathodes entirely comprised of earth-abundant materials that exhibit performance comparable to that of devices that contain Pt