9 research outputs found

    Antisolvent Additive Engineering for Boosting Performance and Stability of Graded Heterojunction Perovskite Solar Cells Using Amide-Functionalized Graphene Quantum Dots

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    Additive and antisolvent engineering strategies are outstandingly efficient in enhancing perovskite quality, photovoltaic performance, and stability of perovskite solar cells (PSCs). In this work, an effective approach is applied by coupling the antisolvent mixture and multi-functional additive procedures, which is recognized as antisolvent additive engineering (AAE). The graphene quantum dots functionalized with amide (AGQDs), which consists of carbonyl, amine, and long hydrophobic alkyl chain functional groups, are added to the antisolvent mixture of toluene (T) and hexane (H) as an efficient additive to form the CH3NH3PbI3 (MAPI):AGQDs graded heterojunction structure. A broad range of analytical techniques, including scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, space charge limited current, UV–visible spectroscopy, external quantum efficiency, and time-of-flight secondary ion mass spectrometry, are used to investigate the effect of AAE treatment with AGQDs on the quality of perovskite film and performance of the PSCs. Importantly, not only a uniform and dense perovskite film with hydrophobic property is obtained but also defects on the perovskite surface are significantly passivated by the interaction between AGQDs and uncoordinated Pb2+. As a result, an enhanced power conversion efficiency (PCE) of 19.10% is achieved for the champion PSCs treated with AGQD additive, compared to the PCE of 16.00% for untreated reference PSCs. In addition, the high-efficiency PSCs based on AGQDs show high stability and maintain 89% of their initial PCE after 960 h in ambient conditions

    Qualitative Analysis of Bulk-Heterojunction Solar Cells without Device Fabrication: An Elegant and Contactless Method

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    The enormous synthetic efforts on novel solar cell materials require a reliable and fast technique for the rapid screening of novel donor/acceptor combinations in order to quickly and reliably estimate their optimized parameters. Here, we report the applicability of such a versatile and fast evaluation technique for bulk heterojunction (BHJ) organic photovoltaics (OPV) by utilizing a steady-state photoluminescence (PL) method confirmed by electroluminescence (EL) measurements. A strong relation has been observed between the residual singlet emission and the charge transfer state emission in the blend. Using this relation, a figure of merit (FOM) is defined from photoluminescence and also electroluminescence measurements for qualitative analysis and shown to precisely anticipate the optimized blend parameters of bulk heterojunction films. Photoluminescence allows contactless evaluation of the photoactive layer and can be used to predict the optimized conditions for the best polymer–fullerene combination. Most interestingly, the contactless, PL-based FOM method has the potential to be integrated as a fast and reliable inline tool for quality control and material optimization

    Two Similar Near-Infrared (IR) Absorbing Benzannulated Aza-BODIPY Dyes as Near-IR Sensitizers for Ternary Solar Cells

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    Ternary composite inverted organic solar cells based on poly­(3-hexylthiophen-2,5-diyl) (P3HT) and phenyl-C<sub>61</sub>-butyric acid methyl ester (PCBM) blended with two different near-infrared absorbing benzannulated aza-BODIPY dyes, difluoro-bora-bis-(1-phenyl-indoyl)-azamethine (<b>1</b>) or difluoro-bora-bis-(1-(5-methylthiophen)-indoyl)-azamethine (<b>2</b>), were constructed and characterized. The amount of these two aza-BODIPY dyes, within the P3HT and PCBM matrix, was systematically varied, and the characteristics of the respective devices were recorded. Although the addition of both aza-BODIPY dyes enhanced the absorption of the blends, only the addition of <b>1</b> improved the overall power conversion efficiency (PCE) in the near-infrared (IR) region. The present work paves the way for the integration of near-infrared absorbing aza-BODIPY derivatives as sensitizers in ternary composite solar cells

    A Paradigmatic Change: Linking Fullerenes to Electron Acceptors

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    The potential of Lu<sub>3</sub>N@C<sub>80</sub> and its analogues as electron acceptors in the areas of photovoltaics and artificial photosynthesis is tremendous. To this date, their electron-donating properties have never been explored, despite the facile oxidations that they reveal when compared to those of C<sub>60</sub>. Herein, we report on the synthesis and physicochemical studies of a covalently linked Lu<sub>3</sub>N@C<sub>80</sub>–perylenebisimide (PDI) conjugate, in which PDI acts as the light harvester and the electron acceptor. Most important is the unambiguous evidencein terms of spectroscopy and kineticsthat corroborates a photoinduced electron transfer evolving from the ground state of Lu<sub>3</sub>N@C<sub>80</sub> to the singlet excited state of PDI. In stark contrast, the photoreactivity of a C<sub>60</sub>–PDI conjugate is exclusively governed by a cascade of energy-transfer processes. Also, the electron-donating property of the Lu<sub>3</sub>N@C<sub>80</sub> moiety was confirmed through constructing and testing a bilayer heterojunction solar cell device with a PDI and Lu<sub>3</sub>N@C<sub>80</sub> derivative as electron acceptor and electron donor, respectively. In particular, a positive photovoltage of 0.46 V and a negative short circuit current density of 0.38 mA are observed with PDI/Ca as anode and ITO/Lu<sub>3</sub>N@C<sub>80</sub> as cathode. Although the devices were not optimized, the sign of the <i>V</i><sub>OC</sub> and the flow direction of <i>J</i><sub>SC</sub> clearly underline the unique oxidative role of Lu<sub>3</sub>N@C<sub>80</sub> within electron donor–acceptor conjugates toward the construction of novel optoelectronic devices

    Combined Computational Approach Based on Density Functional Theory and Artificial Neural Networks for Predicting The Solubility Parameters of Fullerenes

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    The solubility of organic semiconductors in environmentally benign solvents is an important prerequisite for the widespread adoption of organic electronic appliances. Solubility can be determined by considering the cohesive forces in a liquid via Hansen solubility parameters (HSP). We report a numerical approach to determine the HSP of fullerenes using a mathematical tool based on artificial neural networks (ANN). ANN transforms the molecular surface charge density distribution (σ-profile) as determined by density functional theory (DFT) calculations within the framework of a continuum solvation model into solubility parameters. We validate our model with experimentally determined HSP of the fullerenes C<sub>60</sub>, PC<sub>61</sub>BM, bisPC<sub>61</sub>BM, ICMA, ICBA, and PC<sub>71</sub>BM and through comparison with previously reported molecular dynamics calculations. Most excitingly, the ANN is able to correctly predict the dispersive contributions to the solubility parameters of the fullerenes although no explicit information on the van der Waals forces is present in the σ-profile. The presented theoretical DFT calculation in combination with the ANN mathematical tool can be easily extended to other π-conjugated, electronic material classes and offers a fast and reliable toolbox for future pathways that may include the design of green ink formulations for solution-processed optoelectronic devices

    A Paradigmatic Change: Linking Fullerenes to Electron Acceptors

    No full text
    The potential of Lu<sub>3</sub>N@C<sub>80</sub> and its analogues as electron acceptors in the areas of photovoltaics and artificial photosynthesis is tremendous. To this date, their electron-donating properties have never been explored, despite the facile oxidations that they reveal when compared to those of C<sub>60</sub>. Herein, we report on the synthesis and physicochemical studies of a covalently linked Lu<sub>3</sub>N@C<sub>80</sub>–perylenebisimide (PDI) conjugate, in which PDI acts as the light harvester and the electron acceptor. Most important is the unambiguous evidencein terms of spectroscopy and kineticsthat corroborates a photoinduced electron transfer evolving from the ground state of Lu<sub>3</sub>N@C<sub>80</sub> to the singlet excited state of PDI. In stark contrast, the photoreactivity of a C<sub>60</sub>–PDI conjugate is exclusively governed by a cascade of energy-transfer processes. Also, the electron-donating property of the Lu<sub>3</sub>N@C<sub>80</sub> moiety was confirmed through constructing and testing a bilayer heterojunction solar cell device with a PDI and Lu<sub>3</sub>N@C<sub>80</sub> derivative as electron acceptor and electron donor, respectively. In particular, a positive photovoltage of 0.46 V and a negative short circuit current density of 0.38 mA are observed with PDI/Ca as anode and ITO/Lu<sub>3</sub>N@C<sub>80</sub> as cathode. Although the devices were not optimized, the sign of the <i>V</i><sub>OC</sub> and the flow direction of <i>J</i><sub>SC</sub> clearly underline the unique oxidative role of Lu<sub>3</sub>N@C<sub>80</sub> within electron donor–acceptor conjugates toward the construction of novel optoelectronic devices

    Interface Engineering of Perovskite Hybrid Solar Cells with Solution-Processed Perylene–Diimide Heterojunctions toward High Performance

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    Perovskite hybrid solar cells (pero-HSCs) were demonstrated to be among the most promising candidates within the emerging photovoltaic materials with respect to their power conversion efficiency (PCE) and inexpensive fabrication. Further PCE enhancement mainly relies on minimizing the interface losses via interface engineering and the quality of the perovskite film. Here, we demonstrate that the PCEs of pero-HSCs are significantly increased to 14.0% by incorporation of a solution-processed perylene–diimide (PDINO) as cathode interface layer between the [6,6]-phenyl-C61 butyric acid methyl ester (PCBM) layer and the top Ag electrode. Notably, for PDINO-based devices, prominent PCEs over 13% are achieved within a wide range of the PDINO thicknesses (5–24 nm). Without the PDINO layer, the best PCE of the reference PCBM/Ag device was only 10.0%. The PCBM/PDINO/Ag devices also outperformed the PCBM/ZnO/Ag devices (11.3%) with the well-established zinc oxide (ZnO) cathode interface layer. This enhanced performance is due to the formation of a highly qualitative contact between PDINO and the top Ag electrode, leading to reduced series resistance (<i>R</i><sub>s</sub>) and enhanced shunt resistance (<i>R</i><sub>sh</sub>) values. This study opens the door for the integration of a new class of easily-accessible, solution-processed high-performance interfacial materials for pero-HSCs
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