Croissance catalysée de nanofils de ZnSe avec boîtes quantiques de CdSe

Des nanofils de ZnSe catalysés avec de l'or ont été synthétisés pour la première fois sur pseudo-substrats de ZnSe déposé sur GaAs. La nucléation de l'or a été étuidiée en détails. Des nanoparticules d'or de diamètres homogènes ont été produites. Ces nanoparticules conduisent à la création de nanofils de diamètres de l'ordre des diamètres de Bohr des excitons dans le ZnSe et dans le CdSe. Les très basses densités de nanoparticules d'or obtenues permettent la croissance de nanofils de ZnSe dans un mode non-compétitif. La croissance a été étudiée en fonction de la variation de certains paramètres. Un rapport de flux élevé de Se:Zn~4, ainsi qu'une température aux alentours des 400C donnent lieu aux nanofils les plus droits. Les nanofils résultant de ces conditions sur ZnSe (001) s'orientent selon deux axes. La vitesse de croissance des nanofils peut être modélisée par la diffusion d'adatoms vers l'interface de croissance du nanofil. Il est démontré à l'aide d'observations RHEED que la croissance se déroule dans un mode vapeur-solide-solide (VSS), c'est à dire, avec un catalyseur à l'état solide. Une croissance dans le mode ALE produit des nanofils orientés selon un seul axe. L'incorporation de BQ de CdSe à été étudiée en détails par le biais de plusieurs techniques expérimentales. Il est possible d'obtenir des BQ de CdZnSe de quelques nanomètres de long, avec des hétérojonctions abruptes et contenant aux alentours de 50% de Cd. L'étude optique de ces BQ montre de fines raies excitoniques. L'émission de photons uniques a été mesurée sur la raie biexcitonique jusqu'à la température ambiante. À cause de la présence d'une émission discrète du substrat des nanofils, ceux-ci doivent être transférés sur un substrat non-luminescent pour les études optiques.Growth of Au-catalysed ZnSe NWs has been successfully achieved on ZnSe peudo-substrates grown on GaAs substrate for the 1st time. Nucleation of the gold catalyst nanoparticles was studied in details. Au nanoparticles with homogeneous diameters are achieved. The nanowire diameter that results from these nanoparticles is in the range of the Bohr diameter of excitons in ZnSe and CdSe. Ultralow density achieved for Au nanoparticles makes it possible to grow nanowires in a non-competitive mode. Study of the influence of the growth parameters was done in details. A high Se:Zn~4 flux ratio and a growth temperature in the low 400C range are found to yield the straightest NWs. Homogeneous NWs with two main orientations are obtained on (001) ZnSe. The nanowire growth rate can be modeled by a kinetic mass-transport model of impinging adatoms flowing to the nanowire growth front. ZnSe NW growth was identified as taking place in the VSS mode, that is, with a solid catalyst, by in-situ RHEED observations. A growth of NWs by ALE yields only a single NW orientation. Incorporation of CdSe QDs was studied in details with numerous experimental techniques. It is possible to obtain CdZnSe QDs with a length of a few nanometers with compositionally sharp heterojunctions and a composition in Cd of about 50%. The optical study of such NWs shows sharp excitonic lines. Single photon emission on the biexciton was measured up to room temperature. A limitation comes from the fact that the NWs must be detached from the surface to be studied due to the presence of a discreet background emission originating from the substrate.SAVOIE-SCD - Bib.électronique (730659901) / SudocGRENOBLE1/INP-Bib.électronique (384210012) / SudocGRENOBLE2/3-Bib.électronique (384219901) / SudocSudocFranceF

Defect-free ZnSe nanowire and nano-needle nanostructures

We report on the growth of ZnSe nanowires and nano-needles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn--Se flux ratio. By employing a combined MBE growth of nanowires and nano-needles without any post-processing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.Comment: 4 pages, 4 figure

Magnetization dynamics down to zero field in dilute (Cd,Mn)Te quantum wells

The evolution of the magnetization in (Cd,Mn)Te quantum wells after a short pulse of magnetic field was determined from the giant Zeeman shift of spectroscopic lines. The dynamics in absence of magnetic field was found to be up to three orders of magnitude faster than that at 1 T. Hyperfine interaction and strain are mainly responsible for the fast decay. The influence of a hole gas is clearly visible: at zero field anisotropic holes stabilize the system of Mn ions, while in a magnetic field of 1 T they are known to speed up the decay by opening an additional relaxation channel

Photon correlation spectroscopy on a single quantum dot embedded in a nanowire

We have observed strong photoluminescence from a single CdSe quantum dot embedded in a ZnSe nanowire. Exciton, biexciton and charged exciton lines have been identified unambiguously using photon correlation spectroscopy. This technique has provided a detailed picture of the dynamics of this new system. This type of semi conducting quantum dot turns out to be a very efficient single photon source in the visible. Its particular growth technique opens new possibilities as compared to the usual self-asssembled quantum dots

Optical properties of single ZnTe nanowires grown at low temperature

Optically active gold-catalyzed ZnTe nanowires have been grown by molecular beam epitaxy, on a ZnTe(111) buffer layer, at low temperature 350\degree under Te rich conditions, and at ultra-low density (from 1 to 5 nanowires per micrometer^{2}. The crystalline structure is zinc blende as identified by transmission electron microscopy. All nanowires are tapered and the majority of them are oriented. Low temperature micro-photoluminescence and cathodoluminescence experiments have been performed on single nanowires. We observe a narrow emission line with a blue-shift of 2 or 3 meV with respect to the exciton energy in bulk ZnTe. This shift is attributed to the strain induced by a 5 nm-thick oxide layer covering the nanowires, and this assumption is supported by a quantitative estimation of the strain in the nanowires

Dark exciton optical spectroscopy of a semiconducting quantum dot embedded in a nanowire

Photoluminescence of a single CdSe quantum dot embedded in a ZnSe nanowire has been investigated. It has been found that the dark exciton has a strong influence on the optical properties. The most visible influence is the strongly reduced excitonic emission compared to the biexcitonic one. Temperature dependent lifetime measurements have allowed us to measure a large splitting of $\Delta E = 6$ meV between the dark and the bright exciton as well as the spin flip rates between these two states

Insertion of CdSe quantum dots in ZnSe nanowires: Correlation of structural and chemical characterization with photoluminescence

International audienceZnSe nanowires with CdSe quantum dot insertions were grown by molecular beam epitaxy using gold as a catalyst. Structural, chemical, and optical properties of the wires and quantum dots were characterized using electron microscopy and photoluminescence spectroscopy. We determined the crystalline structure, the chemical composition, and the size of the quantum dot and established a correlation between quantum dot size and luminescence. As expected, a blueshift of the luminescence was observed for decreasing quantum dot size. The comparison of calculated photoluminescence energy and experimental data seems to indicate that the quantum dots consist of a ZnxCd1-xSe ternary alloy rather than pure CdSe

Insertion of CdSe quantumdots in ZnSe nanowires : MBE growth and microstructure analysis

International audienceZnSe nanowire growth has been successfully achieved on ZnSe (100) and (111)B buffer layers deposited on GaAs substrates. Cubic [100] oriented ZnSe nanowires or [0001] oriented hexagonal NWs are obtained on (100) substrates while [111] oriented cubic mixed with [0001] oriented hexagonal regions are obtained on (111)B substrates. Most of the NWs are perpendicular to the surface in the last case. CdSe quantum dots were successfully incorporated in the ZnSe NWs as demonstrated by transmission electron microscopy, energy filtered TEM and high angle annular dark field scanning TEM measurements

Extraction of the homogeneous linewidth of the spectrally diffusing line of a CdSe/ZnSe quantum dot embedded in a nanowire

International audienceWe present a simple method to extract the homogeneous linewidth of a single photon emitter line exhibiting fast (down to 1 ns) spectral diffusion (SD). It is based on a recently developed technique using photon correlation measurements on half of the line. Here we show that the SD induced bunching depends on the ratio between the width of the homogeneous line and the spectral diffusion amplitude. Using this technique on a CdSe/ZnSe quantum dot, we investigate the temperature dependence of its fast SD amplitude and its homogeneous excitonic linewidt

Exciton-phonon coupling efficiency in CdSe quantum dots embedded in ZnSe nanowires

International audienceExciton luminescence of a CdSe quantum dot (QD) inserted in a ZnSe nanowire is strongly influenced by the dark exciton states. Because of the small size of these QDs (2-5 nm), exchange interaction between hole and electron is highly enhanced and we measured large energy splitting between bright and dark exciton states (ΔE∈[4,9.2] meV) and large spin-flip rates between these states. Statistics on many QDs showed that this splitting depends on the QD size. Moreover, we measured an increase of the spin-flip rate to the dark states with increasing energy splitting. We explain this observation with a model, taking into account the fact that the exciton-phonon interaction depends on the bright to dark exciton energy splitting, as well as on the size and shape of the exciton wave function. It also has consequences on the exciton line intensity at high temperature