Dielectric susceptibility of InN and related alloys

Dielectric susceptibilities of the following semiconductors for electromagnetic field of zero frequency are investigated: InN, GaN, AlN, InxGa1-xN, InxAl1-xN, InN containing oxygen, and non-stoichiometric InN. The real part of certain dielectric susceptibility is investigated by the electron band structure of the corresponding semiconductor. The matrix elements are calculated as terms between local wave functions describing the highest electron state of the valence band and the lowest electron state of the conduction band. The dielectric susceptibility and the corresponding dielectric permittivity are determined for semiconductors given above. The obtained results are compared with existing experimental data and good agreement is found.4 page(s

Energy band gap and optical properties of non-stoichiometric InN-theory and experiment

The influence of antisite defects in InN is analyzed theoretically using a Linear Combination of Atomic Orbitals approach. The procedure used is validated by confirming the band gaps of common binary alloy semiconductor materials. InN with NIn and InN antisite defects are then analyzed and it is found that in the case of InN:NIn, the excess nitrogen acts as a donor species with its level resident in the conduction band. For InN:InN, it is shown that when there is a significant density of the excess indium present as the antisite defect, tunnel optical absorption should occur in the infrared at 0.2 eV.7 page(s

High mobility nitrides

The highest mobility nitrides ever grown were indium nitride polycrystalline thin films. The original reactive ion sputtering unit used to produce those films is still in existence and has been substantially upgraded. In this paper we describe some of the parameters that are important for high purity indium nitride growth, while providing the most recent results for films grown with the upgraded system. A long lag time (greater than 100 hours of growth time) has been observed before obtaining stable material properties for a given set of growth conditions.6 page(s

Indium nitride emerges

Because of its high mobility, indium nitride is emerging as a “hot” material for potential application in nitride based high power, high frequency transistor devices. The best quality indium nitride ever grown was produced at Macquarie University in the early 1980’s by RF sputtering. The belief since that time has been that the background n-type carrier concentration of this sputtered material is due to nitrogen vacancies. Using measurements made by Elastic Recoil Detection analysis, with an incident beam of 200 MeV Au ions, it is shown that this material is actually grown nitrogen rich with the nitrogen on indium anti-site defect being the most probable origin of the high n-type conductivity commonly observed. Raman measurements confirm the revised model.3 page(s